Ukuhlolwa Kwekhwalithi Ye-China Industrial Polycrystalline Diamond Powder 3-6um ye-Sapphire Wafer

Incazelo emfushane:

Indawo Yomsuka:China

Isakhiwo Sekristalu:Isigaba se-FCCβ

Ukuminyana :3.21 g/cm;

Ukuqina:2500 Vickers;

Usayizi Wokusanhlamvu:2~10μm;

I-Chemical Purity:99.99995%;

Amandla Okushisa :640J·kg-1·K-1;

I-Sublimation Temperature :2700 ℃;

Amandla E-Felexural:415 Mpa (RT 4-Point);

I-Young's Modulus:430 Gpa (4pt bend, 1300℃);

Ukunwetshwa kwe-Thermal (CTE) :4.5 10-6K-1;

I-Thermal Conductivity:300 (W/MK);

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

"Ubuqotho, Ukuqamba Okusha, Ukuqina, kanye Nempumelelo" kuwumqondo ophikelelayo wenkampani yethu wesikhathi eside ukuthuthukisa kanye namakhasimende ukuze babuyisane futhi bahlomule ngokufanayo ekuhlolweni kwekhwalithi ye-China Industrial Polycrystalline.I-Diamond powderI-3-6um ye-Sapphire Wafer, Siyaqiniseka ukuthi singahlinzeka ngemikhiqizo yekhwalithi ephezulu nezisombululo ngamathegi entengo aphusile, ukwesekwa okuphezulu kwangemva kokuthengisa kubathengi. Futhi sizokwakha uhambo olude olunempilo.
"Ubuqotho, Ukuqamba Okusha, Ukuqina, kanye Nempumelelo" kuwumbono ophikelelayo wenkampani yethu ukuze ithuthuke isikhathi eside kanye namakhasimende ukuze bathole ukubuyisana kanye nokuhlomula ngakhoChina Synthetic Diamond, I-Diamond powder, Sihlale siphikelela enkambisweni yokuphatha ethi “Ikhwalithi Eyokuqala, Ubuchwepheshe Buyisisekelo, Ukwethembeka Nokusungula Izinto”.Siyakwazi ukuthuthukisa imikhiqizo emisha ngokuqhubekayo ukuya ezingeni eliphezulu ukuze sanelise izidingo ezihlukene zamakhasimende.
Incazelo Yomkhiqizo

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe ikhabhoni ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, akha ungqimba lokuvikela lwe-SIC.

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.

2. Ukuhlanzeka okuphezulu : okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating

Izakhiwo ze-SiC-CVD
Isakhiwo Sekristalu	I-FCC β isigaba
Ukuminyana	g/cm³	3.21
Ukuqina	Vickers ubulukhuni	2500
Usayizi Wokusanhlamvu	μm	2~10
I-Chemical Purity	%	99.99995
Amandla Okushisa	J·kg-1 ·K-1	640
I-Sublimation Temperature	℃	2700
Amandla E-Felexural	I-MPa (RT 4-point)	415
I-Modulus Encane	I-Gpa (4pt bend, 1300℃)	430
I-Thermal Expansion (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300