Ana amfani da fim ɗin siriri don shafa wani Layer na fim a kan babban kayan da ke cikin semiconductor. Ana iya yin wannan fim ɗin da kayan aiki daban-daban, kamar silicon dioxide mai hana ruwa shiga, semiconductor polysilicon, ƙarfe jan ƙarfe, da sauransu. Ana kiran kayan aikin da ake amfani da su don shafa fim ɗin siriri.
Daga mahangar tsarin kera guntu na semiconductor, yana cikin tsarin gaba-gaba.
Tsarin shirya fim ɗin siriri za a iya raba shi zuwa rukuni biyu bisa ga hanyar samar da fim ɗin: ajiyar tururi na zahiri (PVD) da kuma ajiyar tururi na sinadarai(CVD), daga cikinsu akwai kayan aikin CVD da suka fi yawa.
Tacewar tururin jiki (PVD) tana nufin tururin da ke fitowa daga saman tushen abu da kuma taruwarsa a saman substrate ta hanyar iskar gas/plasma mai ƙarancin matsin lamba, gami da tururin iska, sputtering, ion beam, da sauransu.
Tacewar tururin sinadarai (CVD) yana nufin tsarin sanya wani fim mai ƙarfi a saman wafer ɗin silicon ta hanyar haɗakar sinadarai na cakuda iskar gas. Dangane da yanayin amsawar (matsi, precursor), an raba shi zuwa matsin yanayiCVD(APCVD), ƙarancin matsin lambaCVD(LPVD), CVD mai haɓaka plasma (PECVD), CVD mai yawan yawa na plasma (HDPCVD) da kuma ajiyar Layer na atomic (ALD).
LPCVD: LPCVD yana da ingantaccen ikon ɗaukar matakai, kyakkyawan tsarin sarrafawa da tsari, yawan ajiyar abubuwa da fitarwa, kuma yana rage gurɓatar ƙwayoyin cuta sosai. Dogaro da kayan dumama a matsayin tushen zafi don kiyaye amsawar, sarrafa zafin jiki da matsin iskar gas suna da matuƙar mahimmanci. Ana amfani da shi sosai a cikin kera ƙwayoyin TopCon Layer.
PECVD: PECVD ta dogara ne akan plasma da aka samar ta hanyar shigar da mitar rediyo don cimma ƙarancin zafin jiki (ƙasa da digiri 450) na tsarin tattara fim ɗin siriri. Ajiye ƙarancin zafin jiki shine babban fa'idarsa, ta haka ne ake adana kuzari, rage farashi, ƙara ƙarfin samarwa, da kuma rage lalacewar rayuwar ƙananan masu ɗaukar siminti a cikin wafers ɗin silicon da zafin jiki mai yawa ke haifarwa. Ana iya amfani da shi ga hanyoyin ƙwayoyin halitta daban-daban kamar PERC, TOPCON, da HJT.
ALD: Kyakkyawan daidaiton fim, mai yawa kuma ba tare da ramuka ba, kyawawan halayen ɗaukar hoto, ana iya aiwatar da su a ƙananan zafin jiki (zafin ɗaki-400℃), yana iya sarrafa kauri fim ɗin cikin sauƙi da daidai, yana da amfani sosai ga abubuwan da ke cikin siffofi daban-daban, kuma baya buƙatar sarrafa daidaiton kwararar amsawa. Amma rashin amfani shine saurin samuwar fim ɗin yana da jinkiri. Kamar layin haske mai fitar da haske na zinc sulfide (ZnS) wanda ake amfani da shi don samar da insulators nanostructured (Al2O3/TiO2) da nunin lantarki mai sirara (TFEL).
Tacewar Layer Atom (ALD) wani tsari ne na rufewa ta injin da ke samar da siririn fim a saman Layer bayan Layer a cikin siffar Layer atomic guda ɗaya. Tun daga shekarar 1974, masanin kimiyyar kayan Finland Tuomo Suntola ya ƙirƙiro wannan fasaha kuma ya lashe kyautar Fasaha ta Millennium ta Yuro miliyan 1. An fara amfani da fasahar ALD don nunin lantarki mai faɗi, amma ba a yi amfani da ita sosai ba. Sai a farkon ƙarni na 21 ne masana'antar semiconductor ta fara amfani da fasahar ALD. Ta hanyar ƙera kayan lantarki masu siriri sosai don maye gurbin silicon oxide na gargajiya, ta sami nasarar magance matsalar kwararar ruwa da ta haifar da raguwar faɗin layi na transistors na tasirin filin, wanda hakan ya sa Dokar Moore ta ƙara bunƙasa zuwa ƙananan faɗin layi. Dr. Tuomo Suntola ya taɓa cewa ALD na iya ƙara yawan haɗin kai na abubuwan haɗin kai sosai.
Bayanan jama'a sun nuna cewa Dr. Tuomo Suntola na PICOSUN a Finland ne ya ƙirƙiro fasahar ALD a shekarar 1974 kuma an ƙara samun ci gaba a masana'antu a ƙasashen waje, kamar babban fim ɗin dielectric a cikin guntu na nanometer 45/32 da Intel ta ƙirƙira. A ƙasar Sin, ƙasata ta gabatar da fasahar ALD fiye da shekaru 30 bayan ƙasashen waje. A watan Oktoba na 2010, PICOSUN a Finland da Jami'ar Fudan sun ɗauki nauyin taron musayar ilimi na farko na gida na ALD, inda suka gabatar da fasahar ALD ga China a karon farko.
Idan aka kwatanta da ajiyar tururin sinadarai na gargajiya (CVD) da kuma ajiyar tururin jiki (PVD), fa'idodin ALD sune kyakkyawan daidaito mai girma uku, daidaiton fim ɗin babban yanki, da kuma daidaitaccen sarrafa kauri, waɗanda suka dace da girma fina-finai masu siriri sosai akan siffofi masu rikitarwa da tsarin rabo mai girma.
—Tushen bayanai: Dandalin sarrafa micro-nano na Jami'ar Tsinghua—
A zamanin bayan Moore, sarkakiya da yawan tsarin ƙera wafer sun inganta sosai. Idan aka ɗauki guntun dabaru a matsayin misali, tare da ƙaruwar adadin layukan samarwa tare da hanyoyin da ke ƙasa da 45nm, musamman layukan samarwa tare da hanyoyin da ke ƙasa da 28nm, buƙatun kauri na rufi da kuma sarrafa daidaito sun fi girma. Bayan gabatar da fasahar fallasa abubuwa da yawa, adadin matakan aiwatar da ALD da kayan aikin da ake buƙata sun ƙaru sosai; a fannin guntun ƙwaƙwalwa, tsarin ƙera kayan aiki na yau da kullun ya samo asali daga tsarin 2D NAND zuwa tsarin 3D NAND, adadin layukan ciki ya ci gaba da ƙaruwa, kuma sassan sun gabatar da tsarin rabo mai yawa, mai girman gaske, kuma muhimmiyar rawar da ALD ke takawa ta fara bayyana. Daga hangen nesa na ci gaban semiconductors na gaba, fasahar ALD za ta taka muhimmiyar rawa a zamanin bayan Moore.
Misali, ALD ita ce kawai fasahar adana bayanai da za ta iya biyan buƙatun rufewa da aikin fim na tsarukan 3D masu rikitarwa (kamar 3D-NAND). Ana iya ganin wannan a sarari a cikin hoton da ke ƙasa. Fim ɗin da aka ajiye a cikin CVD A (shuɗi) bai rufe ƙasan tsarin gaba ɗaya ba; koda kuwa an yi wasu gyare-gyare na tsari ga CVD (CVD B) don cimma rufewa, aikin fim ɗin da sinadaran da ke cikin ƙasan ba su da kyau sosai (farin yanki a cikin hoton); akasin haka, amfani da fasahar ALD yana nuna cikakken rufe fim, kuma an sami ingantattun halayen fim iri ɗaya a duk fannoni na tsarin.
—-Fa'idodin Hoto na fasahar ALD idan aka kwatanta da CVD (Tushe: ASM)—-
Duk da cewa CVD har yanzu tana da mafi girman kaso a kasuwa a cikin ɗan gajeren lokaci, ALD ta zama ɗaya daga cikin ɓangarorin da ke bunƙasa cikin sauri a kasuwar kayan aikin wafer fab. A cikin wannan kasuwar ALD mai babban yuwuwar ci gaba da kuma muhimmiyar rawa a masana'antar guntu, ASM babbar kamfani ce a fannin kayan aikin ALD.
Lokacin Saƙo: Yuni-12-2024