Ukufakwa kwefilimu encinci kukufaka umaleko wefilimu kwizinto eziphambili ze-semiconductor. Le filimu ingenziwa ngezinto ezahlukeneyo, ezinje nge-insulating compound silicon dioxide, i-semiconductor polysilicon, i-metal copper, njl. Izixhobo ezisetyenziselwa ukugquma zibizwa ngokuba zizixhobo zokufakwa kwefilimu encinci.
Ngokwembono yenkqubo yokwenziwa kweetshiphusi ze-semiconductor, ikwinkqubo engaphambili.
Inkqubo yokulungiselela ifilimu encinci inokwahlulwahlulwa ibe ngamacandelo amabini ngokwendlela yokwenza ifilimu: i-physical vapor deposition (PVD) kunye ne-chemical vapor deposition.(I-CVD), phakathi kwazo izixhobo zenkqubo ye-CVD zinegalelo elikhulu.
Ukufakwa komphunga ngokwasemzimbeni (i-PVD) kubhekisa ekufakweni komphunga komphezulu womthombo wezinto kunye nokufakwa komphezulu wesiseko ngegesi/iplasma enoxinzelelo oluphantsi, kubandakanya ukufuma, ukutshiza, umqadi we-ion, njl.njl.;
Ukufakwa komphunga weekhemikhali (I-CVD) ibhekisa kwinkqubo yokufaka ifilimu eqinileyo kumphezulu we-silicon wafer ngokusebenzisa i-chemical reaction yomxube wegesi. Ngokweemeko ze-reaction (uxinzelelo, i-precursor), yahlulwe yaba luxinzelelo lomoya.I-CVD(APCVD), uxinzelelo oluphantsiI-CVD(LPCVD), i-plasma ephuculweyo ye-CVD (PECVD), i-high density plasma CVD (HDPCVD) kunye ne-atomic layer deposition (ALD).
I-LPCVD: I-LPCVD inamandla okugubungela amanyathelo angcono, ulawulo olufanelekileyo lokwakheka kunye nolwakhiwo, izinga eliphezulu lokufaka kunye nokukhupha, kwaye inciphisa kakhulu umthombo wongcoliseko lwamasuntswana. Ukuthembela kwizixhobo zokufudumeza njengomthombo wobushushu ukugcina impendulo, ulawulo lobushushu kunye noxinzelelo lwegesi kubaluleke kakhulu. Isetyenziswa kakhulu ekwenzeni iiseli zeTopCon ezikwiPoly layer.
I-PECVD: I-PECVD ixhomekeke kwi-plasma eveliswa kukungeniswa kwerediyo ukuze ifikelele kubushushu obuphantsi (ngaphantsi kwama-450 degrees) kwenkqubo yokufakwa kwefilimu encinci. Ukufakwa kobushushu obuphantsi yeyona nzuzo yayo iphambili, ngaloo ndlela igcina amandla, inciphisa iindleko, inyusa amandla emveliso, kwaye inciphise ukubola kobomi bezinto ezincinci kwii-silicon wafers ezibangelwa bubushushu obuphezulu. Ingasetyenziswa kwiinkqubo zeeseli ezahlukeneyo ezifana ne-PERC, i-TOPCON, kunye ne-HJT.
I-ALD: Ukufana kakuhle kwefilimu, ixinene kwaye ayinamingxunya, iimpawu ezilungileyo zokugubungela amanyathelo, inokwenziwa kubushushu obuphantsi (ubushushu begumbi-400℃), inokulawula ngokulula nangokuchanekileyo ubukhulu befilimu, isebenza kakhulu kwi-substrates zeemilo ezahlukeneyo, kwaye ayidingi kulawula ukufana kokuhamba kwe-reactant. Kodwa ingxaki kukuba isantya sokwenziwa kwefilimu sicotha. Njengomaleko wokukhupha ukukhanya we-zinc sulfide (ZnS) osetyenziselwa ukuvelisa i-nanostructured insulators (Al2O3/TiO2) kunye ne-thin-film electroluminescent displays (TFEL).
Ukubekwa kwe-Atomic layer (ALD) yinkqubo yokugquma i-vacuum eyenza ifilimu encinci kumphezulu we-substrate layer ngokulandelelana kwimo ye-atomic layer enye. Kwasekuqaleni kowe-1974, isazinzulu sezinto zaseFinland uTuomo Suntola saphuhlisa obu buchwephesha saza saphumelela iMbasa yeTekhnoloji yeMillennium yesigidi see-euro. Ubuchwepheshe be-ALD babusetyenziswa ekuqaleni kwi-flat-panel electroluminescent displays, kodwa abuzange busetyenziswe kakhulu. Kwakungekho de kwaba sekuqaleni kwenkulungwane yama-21 apho ubuchwepheshe be-ALD baqala ukwamkelwa lishishini le-semiconductor. Ngokwenza izinto ezibhityileyo kakhulu ezine-dielectric ezithatha indawo ye-silicon oxide yendabuko, yasombulula ngempumelelo ingxaki yokuvuza kwangoku ebangelwe kukunciphisa ububanzi bomgca wee-transistors ze-field effect, nto leyo eyabangela ukuba uMthetho kaMoore uphuhlise ngakumbi ukuya kububanzi bomgca obuncinci. UGqr. Tuomo Suntola wakha wathi i-ALD inokunyusa kakhulu uxinano lokudibanisa lwamacandelo.
Idatha kawonke-wonke ibonisa ukuba iteknoloji ye-ALD yasungulwa nguGqr. Tuomo Suntola we-PICOSUN eFinland ngo-1974 kwaye iye yaphuhliswa kwamanye amazwe, njengefilimu ye-dielectric ephezulu kwi-chip ye-nanometer ye-45/32 eyenziwe yi-Intel. E-China, ilizwe lam lazisa iteknoloji ye-ALD kwiminyaka engaphezu kwama-30 kamva kunamazwe angaphandle. Ngo-Okthobha ka-2010, i-PICOSUN eFinland kunye neYunivesithi yaseFudan babambe intlanganiso yokuqala yokutshintshiselana ngezifundo ze-ALD zasekhaya, bazisa iteknoloji ye-ALD eTshayina okokuqala.
Xa kuthelekiswa nokufakwa komphunga wekhemikhali wendabuko (I-CVD) kunye ne-physical vapor deposition (PVD), iingenelo ze-ALD kukuhambelana kakuhle okunemilinganiselo emithathu, ukufana kwefilimu kwindawo enkulu, kunye nolawulo oluchanekileyo lobukhulu, ezifanelekileyo ekukhuliseni iifilimu ezincinci kakhulu kwiimilo zomphezulu ezintsonkothileyo kunye nezakhiwo zomlinganiselo ophezulu.
—Umthombo wedatha: Iqonga lokucubungula i-micro-nano kwiYunivesithi yaseTsinghua—
Kwixesha lasemva kweMoore, ubunzima kunye nomthamo wenkqubo yokwenziwa kwe-wafer kuye kwaphucuka kakhulu. Ukuthatha iitships ze-logic njengomzekelo, ngokwanda kwenani lemigca yemveliso eneenkqubo ezingaphantsi kwe-45nm, ngakumbi imigca yemveliso eneenkqubo ze-28nm nangaphantsi, iimfuno zobukhulu bokugquma kunye nolawulo lokuchaneka ziphezulu. Emva kokungeniswa kwetekhnoloji yokuvezwa okuninzi, inani lamanyathelo enkqubo ye-ALD kunye nezixhobo ezifunekayo liye landa kakhulu; kwicandelo leetships zememori, inkqubo yokwenziwa kwemveliso eqhelekileyo iguqukele kwisakhiwo se-2D NAND ukuya kwi-3D NAND, inani leeleya zangaphakathi liye laqhubeka nokwanda, kwaye izinto ziye zabonisa kancinci kancinci izakhiwo ezinobunzima obuphezulu, kunye nendima ebalulekileyo ye-ALD iqalile ukuvela. Ngokwembono yophuhliso lwexesha elizayo lwee-semiconductors, itekhnoloji ye-ALD iya kudlala indima ebaluleke ngakumbi kwixesha lasemva kweMoore.
Umzekelo, i-ALD yeyona teknoloji yokubeka kuphela enokuhlangabezana neemfuno zokugubungela kunye nokusebenza kwefilimu yezakhiwo ezixineneyo ze-3D ezihlanganisiweyo (ezifana ne-3D-NAND). Oku kunokubonwa ngokucacileyo kumfanekiso ongezantsi. Ifilimu efakwe kwi-CVD A (eluhlaza okwesibhakabhaka) ayigubungeli ngokupheleleyo inxalenye esezantsi yesakhiwo; nokuba kwenziwe uhlengahlengiso oluthile lwenkqubo kwi-CVD (CVD B) ukuze kufunyanwe ukugubungela, ukusebenza kwefilimu kunye nokwakheka kweekhemikhali kwindawo esezantsi kuphantsi kakhulu (indawo emhlophe kumfanekiso); ngokuchaseneyo, ukusetyenziswa kwetekhnoloji ye-ALD kubonisa ukugubungela okupheleleyo kwefilimu, kwaye iipropati zefilimu ezikumgangatho ophezulu nezifanayo ziyafezekiswa kuzo zonke iindawo zesakhiwo.
—-Iingenelo zomfanekiso wetekhnoloji ye-ALD xa ithelekiswa ne-CVD (Umthombo: ASM)—-
Nangona i-CVD isenesabelo esikhulu semarike kwixesha elifutshane, i-ALD ibe yenye yezona ndawo zikhula ngokukhawuleza kwimarike yezixhobo ze-wafer fab. Kule marike ye-ALD enethuba elikhulu lokukhula kunye nendima ephambili ekuveliseni iitships, i-ASM yinkampani ehamba phambili kwicandelo lezixhobo ze-ALD.
Ixesha lokuthumela: Juni-12-2024