1 Ci gaban aikace-aikace da bincike na shafa silicon carbide a cikin kayan filin zafi na carbon/carbon
1.1 Ci gaban aikace-aikace da bincike a cikin shirye-shiryen giciye
A cikin filin zafi guda ɗaya na kristal,tukunyar carbon/carbonAna amfani da shi galibi azaman jirgin ruwa mai ɗaukar kaya don kayan silicon kuma yana hulɗa dakwalta mai siffar quartz, kamar yadda aka nuna a Hoto na 2. Zafin aiki na carbon/carbon crucible yana da kusan 1450℃, wanda ke fuskantar lalacewar silicon mai ƙarfi (silicon dioxide) da tururin silicon sau biyu, kuma a ƙarshe crucible ɗin ya zama siriri ko kuma ya sami fashewar zobe, wanda ke haifar da gazawar crucible ɗin.
An shirya wani hadadden rufi na carbon/carbon ta hanyar amfani da tsarin sinadarin tururi da kuma amsawar da ke cikin wurin. An yi hadin rufi na silicon carbide (100~300μm), da silicon (10~20μm) da silicon nitride (50~100μm), wanda zai iya hana tsatsa tururin silicon a saman ciki na carbon/carbon composite crucible. A cikin tsarin samarwa, asarar hadadden rufi na carbon/carbon composite crucible mai rufi shine 0.04 mm a kowace tanda, kuma tsawon lokacin aiki zai iya kaiwa sau 180 a cikin tanda.
Masu binciken sun yi amfani da hanyar haɗa sinadarai don samar da wani shafi na silicon carbide iri ɗaya a saman carbon/carbon composite crucible a ƙarƙashin wasu yanayi na zafin jiki da kuma kariyar iskar gas mai ɗaukar kaya, ta amfani da silicon dioxide da silicon metal a matsayin kayan aiki a cikin tanda mai zafi. Sakamakon ya nuna cewa maganin zafin jiki mai yawa ba wai kawai yana inganta tsarki da ƙarfin murfin sic ba, har ma yana inganta juriyar lalacewa na saman carbon/carbon, kuma yana hana tsatsa na saman crucible ta hanyar tururin SiO da ƙwayoyin oxygen masu canzawa a cikin tanderun silicon monocrystal. Rayuwar sabis na crucible ta ƙaru da kashi 20% idan aka kwatanta da na crucible ba tare da sic coating ba.
1.2 Ci gaban aikace-aikace da bincike a cikin bututun jagorar kwarara
Silinda mai jagora tana saman bututun (kamar yadda aka nuna a Hoto na 1). A cikin tsarin jan lu'ulu'u, bambancin zafin jiki tsakanin ciki da waje filin yana da girma, musamman saman ƙasa shine mafi kusa da kayan silicon da aka narke, zafin jiki shine mafi girma, kuma tsatsa ta tururin silicon shine mafi tsanani.
Masu binciken sun ƙirƙiro wani tsari mai sauƙi da kuma kyakkyawan juriya ga iskar shaka ta hanyar amfani da murfin hana iskar shaka da shirye-shiryen bututun jagora. Da farko, an shuka wani Layer na wuski na silicon carbide a wurinsa a kan matrix na bututun jagora, sannan aka shirya wani Layer na waje na silicon carbide mai kauri, ta yadda aka samar da Layer na sauyawa na SiCw tsakanin matrix da Layer na saman silicon carbide mai kauri, kamar yadda aka nuna a Hoto na 3. Matsakaicin faɗaɗa zafi yana tsakanin matrix da silicon carbide. Zai iya rage damuwa ta zafi da rashin daidaiton ma'aunin faɗaɗa zafi ya haifar.
Binciken ya nuna cewa tare da ƙaruwar abun ciki na SiCw, girman da adadin tsagewar murfin yana raguwa. Bayan iskar oksijin awanni 10 a cikin iska mai zafi 1100 ℃, ƙimar asarar nauyi na samfurin murfin shine 0.87% ~ 8.87% kawai, kuma juriyar oksijin da juriyar girgizar zafi na murfin silicon carbide sun inganta sosai. Ana kammala dukkan tsarin shiri akai-akai ta hanyar adana tururin sinadarai, shirya murfin silicon carbide ya zama mai sauƙi sosai, kuma cikakken aikin bututun gaba ɗaya yana ƙaruwa.
Masu binciken sun gabatar da wata hanyar ƙarfafa matrix da kuma shafa saman bututun jagorar graphite don czohr monocrystal silicon. An shafa slurry ɗin silicon carbide da aka samu a saman bututun jagorar graphite tare da kauri mai rufi na 30 ~ 50 μm ta hanyar shafa goga ko feshi, sannan a sanya shi a cikin tanda mai zafi don amsawar da ke cikin wurin, zafin amsawar ya kasance 1850 ~ 2300 ℃, kuma adana zafi ya kasance awanni 2 ~ 6. Ana iya amfani da Layer na waje na SiC a cikin tanda mai girma guda ɗaya mai inci 24 (60.96 cm), kuma zafin amfani shine 1500 ℃, kuma an gano cewa babu fashewa da faɗuwa a saman silinda jagorar graphite bayan awanni 1500.
1.3 Ci gaban aikace-aikace da bincike a cikin silinda mai rufi
A matsayin ɗaya daga cikin muhimman abubuwan da ke cikin tsarin filin zafi na silicon monocrystalline, ana amfani da silinda mai hana zafi musamman don rage asarar zafi da kuma sarrafa yanayin zafin yanayin filin zafi. A matsayin wani ɓangare na tallafi na Layer na rufin bango na ciki na tanderu mai lu'ulu'u ɗaya, tsatsawar tururin silicon yana haifar da faɗuwar slag da fashewa na samfurin, wanda daga ƙarshe ke haifar da gazawar samfurin.
Domin ƙara inganta juriyar tsatsa ta silicon na bututun hadaka na C/C-sic, masu binciken sun sanya kayayyakin bututun hadaka na C/C-sic da aka shirya a cikin tanderun sinadaran, sannan suka shirya murfin silicon carbide mai kauri a saman kayayyakin bututun hadaka na C/C-sic ta hanyar tsarin adana tururin sinadarai. Sakamakon ya nuna cewa, Tsarin zai iya hana tsatsa ta carbon fiber a cikin zuciyar hadakar C/C-sic ta hanyar tururin silicon, kuma juriyar tsatsa ta silicon tururin ya karu da sau 5 zuwa 10 idan aka kwatanta da hadakar carbon/carbon, kuma an inganta rayuwar silinda mai hadewa da amincin yanayin filin zafi sosai.
2. Kammalawa da kuma hangen nesa
Rufin silicon carbideAna ƙara amfani da shi sosai a cikin kayan filin zafi na carbon/carbon saboda kyakkyawan juriyarsa ga iskar shaka a zafin jiki mai yawa. Tare da ƙaruwar girman kayan filin zafi na carbon/carbon da ake amfani da su wajen samar da silicon monocrystalline, yadda ake inganta daidaiton murfin silicon carbide akan saman kayan filin zafi da inganta rayuwar sabis na kayan filin zafi na carbon/carbon ya zama matsala ta gaggawa da za a warware.
A gefe guda kuma, tare da ci gaban masana'antar silicon monocrystalline, buƙatar kayan filin zafi na carbon/carbon mai tsabta yana ƙaruwa, kuma ana haɓaka nanofibers na SiC akan zaruruwan carbon na ciki yayin amsawar. Yawan ablation na taro da ablation na linear na mahaɗan C/ C-ZRC da C/ C-sic ZrC da gwaje-gwaje suka shirya sune -0.32 mg/s da 2.57 μm/s, bi da bi. Yawan ablation na taro da layi na mahaɗan C/ C-sic -ZrC sune -0.24mg/s da 1.66 μm/s, bi da bi. Haɗaɗɗen C/ C-ZRC tare da nanofibers na SiC suna da kyawawan kaddarorin ablation. Daga baya, za a yi nazarin tasirin tushen carbon daban-daban akan haɓakar nanofibers na SiC da kuma hanyar nanofibers na SiC waɗanda ke ƙarfafa kaddarorin ablation na mahaɗan C/ C-ZRC.
An shirya wani hadadden rufi na carbon/carbon ta hanyar amfani da tsarin sinadarin tururi da kuma amsawar da ke cikin wurin. An yi hadin rufi na silicon carbide (100~300μm), da silicon (10~20μm) da silicon nitride (50~100μm), wanda zai iya hana tsatsa tururin silicon a saman ciki na carbon/carbon composite crucible. A cikin tsarin samarwa, asarar hadadden rufi na carbon/carbon composite crucible mai rufi shine 0.04 mm a kowace tanda, kuma tsawon lokacin aiki zai iya kaiwa sau 180 a cikin tanda.
Lokacin Saƙo: Fabrairu-22-2024