1 Ukusetshenziswa kanye nenqubekela phambili yocwaningo lwe-silicon carbide coating ezintweni zensimu yokushisa ye-carbon/carbon
1.1 Inqubekela phambili yokusebenzisa kanye nocwaningo ekulungiseleleni i-crucible
Ensimini yokushisa yekristalu eyodwa,i-carbon/carbon crucibleisetshenziswa kakhulu njengesitsha sokuthwala izinto ze-silicon futhi ixhumana ne-i-quartz crucible, njengoba kuboniswe kuMfanekiso 2. Izinga lokushisa lokusebenza kwe-carbon/carbon crucible lingaba ngu-1450℃, elibhekene nokuguguleka okuphindwe kabili kwe-silicon eqinile (i-silicon dioxide) kanye nomhwamuko we-silicon, futhi ekugcineni i-crucible iba mncane noma ibe nokuqhekeka kwendandatho, okuholela ekuhlulekeni kwe-crucible.
I-composite coating carbon/carbon composite crucible yalungiswa ngenqubo yokugeleza komphunga wamakhemikhali kanye nokusabela kwangaphakathi. I-composite coating yayakhiwe nge-silicon carbide coating (100~300μm), i-silicon coating (10~20μm) kanye ne-silicon nitride coating (50~100μm), okungavimbela ngempumelelo ukugqwala komphunga we-silicon ebusweni bangaphakathi be-carbon/carbon composite crucible. Enqubweni yokukhiqiza, ukulahleka kwe-composite coating carbon/carbon composite crucible kungu-0.04 mm ngesithando somlilo ngasinye, futhi impilo yesevisi ingafinyelela izikhathi ezingu-180 zesithando somlilo.
Abacwaningi basebenzise indlela yokusabela ngamakhemikhali ukukhiqiza uqweqwe lwe-silicon carbide olufanayo ebusweni be-crucible ehlanganisiwe ye-carbon/carbon ngaphansi kwezimo ezithile zokushisa kanye nokuvikelwa kwegesi ethwalayo, besebenzisa i-silicon dioxide kanye ne-silicon metal njengezinto zokusetshenziswa esithandweni sokushisa esiphezulu. Imiphumela ikhombisa ukuthi ukwelashwa kokushisa okuphezulu akugcini nje ngokuthuthukisa ubumsulwa namandla e-sic coating, kodwa futhi kuthuthukisa kakhulu ukumelana nokuguguleka kobuso be-carbon/carbon composite, futhi kuvimbela ukugqwala kobuso be-crucible yi-SiO2 vapor kanye nama-athomu e-oxygen aguquguqukayo esithandweni se-silicon se-monocrystal. Impilo yenkonzo ye-crucible ikhuliswa ngo-20% uma kuqhathaniswa neye-crucible ngaphandle kwe-sic coating.
1.2 Ukusetshenziswa kanye nenqubekela phambili yocwaningo ku-flow guide tube
Isilinda sokuqondisa sitholakala ngaphezu kwe-crucible (njengoba kuboniswe kuMfanekiso 1). Enqubweni yokudonsa ngekristalu, umehluko wokushisa phakathi kwangaphakathi nangaphandle kwensimu mkhulu, ikakhulukazi indawo engezansi iseduze kakhulu nezinto ze-silicon ezincibilikisiwe, izinga lokushisa liphezulu kakhulu, kanti ukugqwala komhwamuko we-silicon yikona okubi kakhulu.
Abacwaningi basungula inqubo elula kanye nokumelana okuhle kwe-oxidation ye-guide tube anti-oxidation coating kanye nendlela yokulungiselela. Okokuqala, ungqimba lwe-silicon carbide whisker lwakhuliswa endaweni ethile ku-matrix ye-guide tube, kwabe sekulungiswa ungqimba lwangaphandle lwe-silicon carbide oluqinile, ukuze kwakheke ungqimba lokuguquguquka lwe-SiCw phakathi kwe-matrix kanye nongqimba oluphezulu lwe-silicon carbide oluqinile, njengoba kuboniswe kuMfanekiso 3. I-coefficient of thermal expansion yayiphakathi kwe-matrix kanye ne-silicon carbide. Inganciphisa ngempumelelo ukucindezeleka kokushisa okubangelwa ukungalingani kwe-thermal expansion coefficient.
Ukuhlaziywa kukhombisa ukuthi ngokwanda kokuqukethwe kwe-SiCw, usayizi kanye nenani lemifantu ephepheni liyancipha. Ngemva kokushiswa kwamahora ayi-10 emoyeni ongu-1100 ℃, izinga lokulahlekelwa isisindo kwesampula yokushiswa lingu-0.87% ~ 8.87% kuphela, kanti ukumelana nokushiswa kwe-oxidation kanye nokumelana nokushaqeka kokushisa kwephepheni le-silicon carbide kuthuthukiswa kakhulu. Inqubo yonke yokulungiselela iqedwa ngokuqhubekayo ngokubeka umhwamuko wamakhemikhali, ukulungiswa kwephepheni le-silicon carbide kwenziwa lula kakhulu, futhi ukusebenza okuphelele kwe-nozzle yonke kuyaqiniswa.
Abacwaningi baphakamise indlela yokuqinisa i-matrix kanye nokugqoka ubuso be-graphite guide tube ye-czohr monocrystal silicon. I-silicon carbide slurry etholwe yambozwa ngokulinganayo ebusweni be-graphite guide tube ngobukhulu obungu-30 ~ 50 μm nge-brush coating noma indlela ye-spray coating, yabe isifakwa esithandweni sokushisa okuphezulu ukuze kuphendulwe ngaphakathi, izinga lokushisa lokusabela lalingu-1850 ~ 2300 ℃, kanti ukugcinwa kokushisa kwakungamahora angu-2 ~ 6. Ingqimba yangaphandle ye-SiC ingasetshenziswa esithandweni sokukhulisa i-crystal eyodwa esingu-24 in (60.96 cm), kanti izinga lokushisa lokusetshenziswa lingu-1500 ℃, futhi kutholakale ukuthi akukho ukuqhekeka kanye nempuphu ewayo ebusweni be-graphite guide cylinder ngemva kwamahora angu-1500.
1.3 Ukusetshenziswa kanye nenqubekela phambili yocwaningo kusilinda sokushisa
Njengenye yezingxenye ezibalulekile zesistimu yensimu yokushisa ye-silicon e-monocrystalline, isilinda sokushisa sisetshenziswa kakhulu ukunciphisa ukulahleka kokushisa nokulawula i-gradient yokushisa yendawo yensimu yokushisa. Njengengxenye esekelayo yesendlalelo sokushisa sodonga sangaphakathi sesithando sekristalu esisodwa, ukugqwala komphunga we-silicon kuholela ekuweni kwe-slag kanye nokuqhekeka komkhiqizo, okugcina kuholele ekwehlulekeni komkhiqizo.
Ukuze kuthuthukiswe kakhulu ukumelana nokugqwala komphunga we-silicon we-C/ C-sic composite insulation tube, abacwaningi bafake imikhiqizo ye-C/ C-sic composite insulation tube elungiselelwe esithandweni sokusabela komphunga wamakhemikhali, futhi balungisa i-silicon carbide ende ye-silicon phezu kwemikhiqizo ye-C/ C-sic composite insulation tube ngenqubo yokufaka umphunga wamakhemikhali. Imiphumela ikhombisa ukuthi, Le nqubo ingavimbela ngempumelelo ukugqwala kwe-carbon fiber enkabeni ye-C/ C-sic composite nge-silicon vapor, futhi ukumelana nokugqwala komphunga we-silicon kwandiswa izikhathi ezi-5 kuya kweziyi-10 uma kuqhathaniswa ne-carbon/carbon composite, futhi impilo yesevisi yesilinda yokushisa kanye nokuphepha kwendawo yokushisa ithuthukiswa kakhulu.
2. Isiphetho kanye nethemba
Ukugqoka kwe-silicon carbideisetshenziswa kabanzi kakhulu ezintweni zensimu ye-carbon/carbon thermal ngenxa yokumelana kwayo okuhle kakhulu kwe-oxidation ekushiseni okuphezulu. Njengoba ubukhulu bezinto zensimu ye-carbon/carbon thermal ezisetshenziswa ekukhiqizweni kwe-silicon ye-monocrystalline bukhula, indlela yokuthuthukisa ukufana kwe-silicon carbide coating ebusweni bezinto zensimu ye-thermal kanye nokuthuthukisa impilo yenkonzo yezinto zensimu ye-carbon/carbon thermal isibe yinkinga ephuthumayo okufanele ixazululwe.
Ngakolunye uhlangothi, ngokuthuthukiswa kwemboni ye-silicon ye-monocrystalline, isidingo sezinto zokwakha zensimu ye-carbon/carbon thermal ezihlanzekile kakhulu naso siyakhula, kanti ama-nanofiber e-SiC nawo akhuliswa kuma-fiber e-carbon angaphakathi ngesikhathi sokusabela. Amazinga okukhishwa kwesisindo kanye nokukhishwa okuqondile kwama-composites e-C/ C-ZRC kanye ne-C/ C-sic ZrC alungiselelwe ukuhlolwa angama--0.32 mg/s kanye no-2.57 μm/s, ngokulandelana. Amazinga okukhishwa kwesisindo kanye nomugqa wama-composites e-C/ C-sic -ZrC angama--0.24mg/s kanye no-1.66 μm/s, ngokulandelana. Ama-composites e-C/ C-ZRC anama-nanofiber e-SiC anezakhiwo ezingcono zokukhishwa kwesisindo. Kamuva, imiphumela yemithombo ehlukene yekhabhoni ekukhuleni kwama-nanofiber e-SiC kanye nendlela ama-nanofiber e-SiC aqinisa izakhiwo zokukhishwa kwesisindo sama-composites e-C/ C-ZRC izofundwa.
I-composite coating carbon/carbon composite crucible yalungiswa ngenqubo yokugeleza komphunga wamakhemikhali kanye nokusabela kwangaphakathi. I-composite coating yayakhiwe nge-silicon carbide coating (100~300μm), i-silicon coating (10~20μm) kanye ne-silicon nitride coating (50~100μm), okungavimbela ngempumelelo ukugqwala komphunga we-silicon ebusweni bangaphakathi be-carbon/carbon composite crucible. Enqubweni yokukhiqiza, ukulahleka kwe-composite coating carbon/carbon composite crucible kungu-0.04 mm ngesithando somlilo ngasinye, futhi impilo yesevisi ingafinyelela izikhathi ezingu-180 zesithando somlilo.
Isikhathi sokuthunyelwe: Feb-22-2024