1 Isicelo kanye nenqubekelaphambili yocwaningo lwe-silicon carbide coating ku-carbon/carbon thermal field materials
1.1 Isicelo kanye nenqubekelaphambili yocwaningo ekulungiseleleni i-crucible
Esigabeni esisodwa se-crystal thermal, ii-carbon/carbon crucibleisetshenziswa kakhulu njengomkhumbi othwala izinto ze-silicon futhi ixhumene nei-quartz crucible, njengoba kuboniswe ku-Figure 2. Izinga lokushisa elisebenzayo le-carbon / carbon crucible cishe li-1450℃, elibhekene nokuguguleka okuphindwe kabili kwe-silicon eqinile (i-silicon dioxide) kanye nomhwamuko we-silicon, futhi ekugcineni i-crucible iba mncane noma ibe nokuqhekeka kwendandatho, okuholela ekuhlulekeni kwe-crucible.
Ingxube ehlanganisiwe ye-carbon/carbon composite crucible yalungiselelwa inqubo yokufaka umhwamuko wamakhemikhali kanye nokusabela kwe-in-situ. I-coating eyinhlanganisela yakhiwe nge-silicon carbide coating (100~300μm), i-silicon coating (10~20μm) kanye ne-silicon nitride coating (50 ~ 100μm), engavimbela ngokuphumelelayo ukugqwala kwe-silicon vapor endaweni engaphakathi ye-carbon / carbon composite crucible. Enqubweni yokukhiqiza, ukulahlekelwa kwe-composite coated carbon/carbon composite crucible ngu-0.04 mm esithandweni somlilo ngasinye, futhi impilo yesevisi ingafinyelela izikhathi ezingu-180 zomlilo.
Abacwaningi basebenzise indlela yokusabela kwamakhemikhali ukuze benze i-silicon carbide coating efanayo phezu kwe-carbon/carbon composite crucible ngaphansi kwezimo ezithile zokushisa nokuvikelwa kwegesi elithwalayo, kusetshenziswa i-silicon dioxide ne-silicon metal njengezinto ezingavuthiwe esithandweni sokushisa esishisa kakhulu. Imiphumela ibonisa ukuthi ukwelashwa okuphezulu kwezinga lokushisa akuthuthukisi nje kuphela ubumsulwa namandla we-sic coating, kodwa futhi kuthuthukisa kakhulu ukumelana nokugqokwa kwendawo ye-carbon/carbon composite, futhi kuvimbela ukugqwala kobuso be-crucible nge-SiO vapor nama-athomu oksijini aguquguqukayo esithandweni somlilo se-monocrystal silicon. Impilo yesevisi ye-crucible ikhuphuke ngo-20% uma iqhathaniswa ne-crucible ngaphandle kwe-sic coating.
1.2 Isicelo kanye nenqubekelaphambili yocwaningo kushubhu lomhlahlandlela wokugeleza
Isilinda somhlahlandlela sitholakala ngaphezu kwe-crucible (njengoba kuboniswe kuMfanekiso 1). Enqubweni yokudonsa ngekristalu, umehluko wezinga lokushisa phakathi kwenkundla nangaphandle mkhulu, ikakhulukazi indawo engezansi iseduze kakhulu nezinto ze-silicon ezincibilikisiwe, izinga lokushisa liphezulu kakhulu, futhi ukugqwala komhwamuko we-silicon kubi kakhulu.
Abacwaningi basungula inqubo elula kanye nokumelana okuhle kwe-oxidation ye-tube yomhlahlandlela e-anti-oxidation coating kanye nendlela yokulungiselela. Okokuqala, ungqimba lwe-silicon carbide whisker lwalukhuliswe ku-matrix ye-tube yomhlahlandlela, bese ungqimba lwangaphandle oluminyene lwe-silicon carbide lulungiswa, ukuze kwakhiwe ungqimba lwenguquko lwe-SiCw phakathi kwe-matrix ne-silicon carbide surface layer, njengoba kuboniswe ku-Figure 3. I-coefficient of thermal expansion yayiphakathi kwe-silicon matrix ye-carbide. Inganciphisa ngempumelelo ingcindezi yokushisa ebangelwa ukungafani kwe-coefficient yokwandisa ukushisa.
Ukuhlaziywa kukhombisa ukuthi ngokwanda kokuqukethwe kwe-SiCw, usayizi kanye nenani lemifantu ekwehleni kokumboza kuyancipha. Ngemuva kwe-oxidation engu-10h emoyeni ongu-1100 ℃, izinga lokuncipha kwesisindo sesampula enamathelayo lingu-0.87% ~ 8.87% kuphela, futhi ukumelana ne-oxidation nokumelana nokushaqeka okushisayo kwe-silicon carbide coating kuthuthukiswa kakhulu. Yonke inqubo yokulungiselela iphothulwa ngokuqhubekayo ngokufakwa komhwamuko wamakhemikhali, ukulungiswa kwe-silicon carbide coating kwenziwa lula kakhulu, futhi ukusebenza okuphelele kwawo wonke umlomo kuyaqiniswa.
Abacwaningi bahlongoze indlela yokuqinisa i-matrix kanye nokumbozwa kwendawo ye-graphite guide tube ye-czohr monocrystal silicon. I-silicon carbide slurry etholiwe yayimbozwe ngokulinganayo phezu kweshubhu lomhlahlandlela wegraphite enogqinsi oluyi-30 ~ 50 μm ngokugcotshwa kwebhulashi noma indlela yokufutha, bese ifakwa esithandweni sokushisa esiphezulu sokusabela kwe-in-situ, izinga lokushisa lokusabela laliyi-1850 ~ 2300 ℃, futhi ukugcinwa kokushisa kwaba ngu-2 ~ 6h. Isendlalelo sangaphandle se-SiC singasetshenziswa ku-24 in (60.96 cm) yesithando somlilo esisodwa sokukhula kwekristalu, futhi izinga lokushisa lokusetshenziswa liyi-1500 ℃, futhi kutholakala ukuthi akukho powder eqhekeka futhi ewayo ebusweni besilinda somhlahlandlela wegraphite ngemva kwe-1500h.
1.3 Isicelo kanye nenqubekelaphambili yocwaningo ku-insulation cylinder
Njengenye yezingxenye ezibalulekile zohlelo lwensimu ye-monocrystalline silicon eshisayo, isilinda sokufaka sisetshenziswa kakhulu ukunciphisa ukulahleka kokushisa nokulawula ukuthambekela kwezinga lokushisa kwemvelo yensimu eshisayo. Njengengxenye esekelayo yongqimba lwangaphakathi lokufakwa kodonga lwesithando somlilo sekristalu eyodwa, ukugqwala kwe-silicon vapor kuholela ekwehleni kwe-slag nokuqhekeka komkhiqizo, okugcina kuholele ekwehlulekeni komkhiqizo.
Ukuze kuqhutshekwe kuthuthukiswe ukumelana nokugqwala kwe-silicon ye-C/C-sic composite insulation tube, abacwaningi bafaka imikhiqizo yeshubhu le-C/C-sic eyinhlanganisela ehlanganisiwe ye-C/C esithandweni somlilo samakhemikhali, futhi balungisa ukunamathela okuminyene kwe-silicon carbide ebusweni be-C/C-sic composite imikhiqizo yeshubhu ngenqubo yokubeka umhwamuko wamakhemikhali. Imiphumela ibonisa ukuthi, Le nqubo ingavimbela ngempumelelo ukugqwala kwe-carbon fibre kumongo we-C/C-sic composite ngomhwamuko we-silicon, futhi ukumelana nokugqwala komhwamuko we-silicon kukhuphuka izikhathi ezi-5 kuye kweziyi-10 uma kuqhathaniswa nenhlanganisela ye-carbon/carbon, kanye nempilo yesevisi yesilinda sokufakelwa kanye nokuphepha kwendawo eshisayo yasensimini kuthuthukiswe kakhulu.
2. Isiphetho kanye nethemba
Ukufakwa kwe-silicon carbideisetshenziswa kabanzi ezintweni zensimu ye-carbon/carbon thermal ngenxa yokumelana kwayo kahle ne-oxidation ezingeni lokushisa eliphezulu. Ngosayizi okhulayo we-carbon/carbon thermal field materials ezisetshenziswa ekukhiqizeni i-silicon ye-monocrystalline, indlela yokuthuthukisa ukufana kwe-silicon carbide coating ebusweni bezinto zasensimini ezishisayo futhi kuthuthukiswe impilo yesevisi ye-carbon/carbon thermal field materials sekuyinkinga ephuthumayo okufanele ixazululwe.
Ngakolunye uhlangothi, ngokuthuthukiswa kwemboni ye-silicon ye-monocrystalline, isidingo se-high-purity carbon/carbon thermal field materials siyanda, futhi ama-SiC nanofibers nawo akhuliswa kuma-carbon fibers angaphakathi ngesikhathi sokuphendula. Isilinganiso sokukhishwa kwesisindo esikhulu kanye namazinga omugqa wokukhipha we-C/ C-ZRC kanye nenhlanganisela ye-C/ C-sic ZrC elungiswe ukuhlolwa ngu-0.32 mg/s kanye no-2.57 μm/s, ngokulandelana. Izilinganiso zokukhishwa kwesisindo nomugqa wezinhlanganisela ze-C/ C-sic -ZrC ziyi- -0.24mg/s kanye no-1.66 μm/s, ngokulandelana. Izinhlanganisela ze-C/C-ZRC nama-SiC nanofibers zinezakhiwo ezingcono zokususa. Kamuva, imiphumela yemithombo yekhabhoni ehlukene ekukhuleni kwama-SiC nanofibers kanye nendlela ye-SiC nanofibers eqinisa izakhiwo ezivuthayo zezinhlanganisela ze-C/ C-ZRC zizofundwa.
Ingxube ehlanganisiwe ye-carbon/carbon composite crucible yalungiselelwa inqubo yokufaka umhwamuko wamakhemikhali kanye nokusabela kwe-in-situ. I-coating eyinhlanganisela yakhiwe nge-silicon carbide coating (100~300μm), i-silicon coating (10~20μm) kanye ne-silicon nitride coating (50 ~ 100μm), engavimbela ngokuphumelelayo ukugqwala kwe-silicon vapor endaweni engaphakathi ye-carbon / carbon composite crucible. Enqubweni yokukhiqiza, ukulahlekelwa kwe-composite coated carbon/carbon composite crucible ngu-0.04 mm esithandweni somlilo ngasinye, futhi impilo yesevisi ingafinyelela izikhathi ezingu-180 zomlilo.
Isikhathi sokuthumela: Feb-22-2024