Kushandisa uye kufambira mberi kwekutsvagisa kweSiC kupfekedza mucarbon/carbon thermal field materials for monocrystalline silicon-2

1 Kushandisa uye kufambira mberi kwekutsvagisa kwesilicon carbide coating mucarbon/carbon thermal field materials

1.1 Kushanda uye kufambira mberi kwekutsvagisa mukugadzirira kwakakosha

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Mune imwechete crystal yekudziya munda, iyokabhoni / carbon crucibleinonyanya kushandiswa semudziyo wekutakura wesilicon zvinhu uye iri kusangana neiyoquartz crucible, sezvinoratidzwa mumufananidzo 2. Kupisa kwekushanda kwekabhoni / carbon crucible inenge 1450 ℃, iyo inokonzerwa nekuputika kaviri kwesilicon yakasimba (silicon dioxide) uye silicon vapor, uye pakupedzisira crucible inova yakaonda kana kuti ine mhete inoputika, zvichiita kuti kukundikana kweiyo crucible.

Iyo inosanganiswa yekuputira kabhoni / kabhoni inoumbwa crucible yakagadzirwa nemakemikari vapor permeation process uye in-situ reaction. The composite unhani akaumbwa nesilicon carbide unhani (100 ~ 300μm), nesilicon coating (10 ~ 20μm) uye nesilicon nitride unhani (50 ~ 100μm), izvo aigona zvinobudirira kurambidza ngura nesilicon mhute pamusoro yomukati pamusoro kabhoni/carbon composite crucible. Mukugadzira, kurasikirwa kweiyo composite yakavharwa kabhoni / kabhoni composite crucible ndeye 0.04 mm pachoto, uye hupenyu hwesevhisi hunogona kusvika zana nemakumi masere evira.

Vatsvakurudzi vakashandisa nzira yemakemikari kuita kuti vagadzire yunifomu yesilicon carbide coating pamusoro pekabhoni / carbon composite crucible pasi pemamwe mamiriro ekushisa uye kudzivirira gasi rinotakura, vachishandisa silicon dioxide nesilicon simbi sezvinhu zvakasvibirira muvira rinopisa rinopisa. Mhedzisiro yacho inoratidza kuti kupisa kwakanyanya kwekushisa hakungogadziri kuchena uye kusimba kweiyo sic coating, asiwo kunonatsiridza zvakanyanya kusagadzika kwepamusoro pekabhoni / kabhoni inoumbwa, uye inodzivirira kukora kwepamusoro peiyo crucible neSiO mhute uye inoputika maatomu eokisijeni mumonocrystal silicon choto. Hupenyu hwesevhisi hwe crucible hunowedzerwa ne20% kana ichienzaniswa neiyo yecrucible isina sic coating.

1.2 Kushanda uye kufambira mberi kwekutsvagisa mukuyerera kwechubhu

Iyo silinda yekutungamira iri pamusoro peiyo crucible (sezvinoratidzwa mumufananidzo 1). Mukuita kudhonzwa kwekristaro, musiyano wetembiricha pakati pemukati nekunze wemunda wakakura, kunyanya pasi pepasi padyo nesilicon yakanyungudutswa, tembiricha ndiyo yakanyanya kunaka, uye kukoromoka nesilicon vapor ndiko kwakanyanya kuoma.

Vatsvakurudzi vakagadzira nzira yakapfava uye yakanaka oxidation kuramba kweiyo inotungamira chubhu anti-oxidation coating uye nzira yekugadzirira. Kutanga, chidimbu chesilicon carbide whisker chaive mu-situ yakakura pamatrix echubhu inotungamira, uye ipapo dense silicon carbide yekunze yakagadziriswa, kuitira kuti SiCw shanduko yekuchinja yakaumbwa pakati pematrix uye dense silicon carbide surface layer, sezvinoratidzwa muMufananidzo 3. Iko coefficient of thermal expansion yaiva pakati pesilicon matrix. Inogona kunyatso kuderedza kushushikana kwekushisa kunokonzerwa nekusawirirana kwemafuta ekuwedzera coefficient.

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Ongororo yacho inoratidza kuti nekuwedzera kweSiCw zvemukati, saizi uye nhamba yekutsemuka mukupfeka kunoderera. Mushure me 10h oxidation mu 1100 ℃ mhepo, chiyero chekurasikirwa kwehuremu hwemuenzaniso wekuputira ingori 0.87% ~ 8.87%, uye kupikisa kweoxidation uye kupisa kwekushisa kwesilicon carbide coating kunovandudzwa zvikuru. Iyo yese gadziriro yekugadzirira inopedzwa zvichienderera mberi nemakemikari vapor deposition, kugadzirira kwesilicon carbide coating inorerutswa zvakanyanya, uye kushanda kwakazara kweiyo nozzle yese kunosimbiswa.

Vatsvakurudzi vakakurudzira nzira yekusimbisa matrix uye pamusoro pekuvhara kwegraphite guide chubhu ye czohr monocrystal silicon. Iyo yakawanikwa silicon carbide slurry yakavharwa zvakafanana pamusoro peiyo graphite gidhi chubhu ine coating ukobvu hwe30 ~ 50 μm nebhurashi yekuputira kana kupfapfaidza nzira yekuputira, uye ndokuiswa muchoto chekushisa chepamusoro che-in-situ reaction, tembiricha yekupindura yaive 1850 ~ 2300 ℃, uye kupisa ~ 6h kuchengetedza. Iyo SiC yekunze layer inogona kushandiswa mu24 mu(60.96 cm) imwe chete crystal yekukura muvira, uye tembiricha yekushandisa ndeye 1500 ℃, uye inowanikwa kuti hapana kuputika uye kudonha hupfu pamusoro peiyo girafu inotungamira cylinder mushure me1500h.

1.3 Kushanda uye kufambira mberi kwekutsvagisa muinsulation cylinder

Sechimwe chezvinhu zvakakosha zve monocrystalline silicon thermal field system, iyo silinda yekudzivirira inonyanya kushandiswa kudzikisa kurasikirwa nekupisa uye kudzora tembiricha gradient yenzvimbo inopisa. Sechikamu chinotsigira chemukati wemadziro ekudzivirira dhizaini yeimwe crystal furnace, silicon vapor corrosion inotungamira kune slag kudonha uye kuputika kwechigadzirwa, izvo zvinozopedzisira zvatungamira mukukundikana kwechigadzirwa.

Kuti uwedzere kuwedzera silicon vapor corrosion resistance yeC/ C-sic composite insulation chubhu, vaongorori vakaisa yakagadzirwa C/ C-sic composite insulation chubhu zvigadzirwa muchemikari vapor reaction furace, uye vakagadzira dense silicon carbide coating pamusoro peC/ C-sic composite insulation chubhu zvigadzirwa nemakemikari vapor deposition process. Mhedzisiro yacho inoratidza kuti, Iyo nzira inogona kunyatso kuvharira kukora kwekabhoni faibha papakati peC/ C-sic inoumbwa nesilicon vapor, uye kushorwa kwesilicon vapor kunowedzerwa kashanu kusvika kagumi kana zvichienzaniswa nekabhoni / kabhoni composite, uye hupenyu hwesevhisi yehumburumbira uye kuchengetedzeka kwenzvimbo yekudziya yakavandudzwa zvakanyanya.

2. Mhedziso uye tarisiro

Silicon carbide coatingInonyanya kushandiswa zvakanyanya mucarbon/carbon thermal field materials nekuda kwekunaka kwayo oxidation kuramba pakupisa kwepamusoro. Nekukura kuri kuwedzera kwekabhoni/carbon thermal field materials inoshandiswa mukugadzirwa kwesilicon yemonocrystalline, maitiro ekuvandudza kufanana kwesilicon carbide coating pamusoro pezvinhu zvinopisa zvemunda uye kuvandudza hupenyu hwebasa hwekabhoni / carbon thermal field materials rave dambudziko rekukurumidzira kugadziriswa.

Kune rimwe divi, nekuvandudzwa kweiyo monocrystalline silicon indasitiri, kudiwa kwepamusoro-kuchena kabhoni/carbon thermal field materials kuri kuwedzerawo, uye maSiC nanofibers anorimwawo pamukati kabhoni fibers panguva yekuita. Iyo yakawanda ablation uye mutsara ablation mazinga eC/ C-ZRC uye C/ C-sic ZrC macomposites akagadzirirwa nemiedzo ndeye -0.32 mg/s uye 2.57 μm/s, zvichiteerana. Iyo yakawanda uye mutsara ablation rates yeC / C-sic -ZrC inosanganiswa ndeye -0.24mg / s uye 1.66 μm / s, maererano. Iyo C/ C-ZRC inosanganiswa neSiC nanofibers ine zvirinani ablative zvivakwa. Gare gare, mhedzisiro yeakasiyana kabhoni masosi pakukura kweSiC nanofibers uye mashandiro eSiC nanofibers anosimbisa ablative zvimiro zveC/C-ZRC macomposites achadzidzwa.

Iyo inosanganiswa yekuputira kabhoni / kabhoni inoumbwa crucible yakagadzirwa nemakemikari vapor permeation process uye in-situ reaction. The composite unhani akaumbwa nesilicon carbide unhani (100 ~ 300μm), nesilicon coating (10 ~ 20μm) uye nesilicon nitride unhani (50 ~ 100μm), izvo aigona zvinobudirira kurambidza ngura nesilicon mhute pamusoro yomukati pamusoro kabhoni/carbon composite crucible. Mukugadzira, kurasikirwa kweiyo composite yakavharwa kabhoni / kabhoni composite crucible ndeye 0.04 mm pachoto, uye hupenyu hwesevhisi hunogona kusvika zana nemakumi masere evira.


Nguva yekutumira: Feb-22-2024
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