Kushandiswa uye kufambira mberi kwekutsvaga kweSiC coating muzvinhu zve carbon/carbon thermal field zve monocrystalline silicon-2

1 Kushandiswa uye kufambira mberi kwekutsvaga kwe silicon carbide coating muzvinhu zve carbon/carbon thermal field

1.1 Kufambira mberi kwekushandisa uye kutsvaga mukugadzirira kwecrucible

Mumunda wekupisa wekristaro imwe chete,kabhoni/kabhoni inopfutainonyanya kushandiswa semudziyo wekutakura zvinhu zvesilicon uye inosangana nechipfukidziro chequartz, sezvakaratidzwa paMufananidzo 2. Tembiricha yekushanda kwechinhu chinopfurwa nekabhoni/kabhoni inenge 1450℃, iyo inokanganiswa nekukukurwa kaviri kwesilicon yakasimba (silicon dioxide) nesilicon vapor, uye pakupedzisira chinhu chinopfurwa chinova chitete kana kuti chine denderedzwa, zvichikonzera kutadza kwechinhu chinopfurwa.

Chinoputirwa checarbon/carbon composite coating chakagadzirwa ne chemical vapor permeation process uye in-situ reaction. Chinoputirwa checomposite chakagadzirwa ne silicon carbide coating (100~300μm), silicon coating (10~20μm) uye silicon nitride coating (50~100μm), izvo zvaigona kudzivirira ngura ye silicon vapor pamusoro pemukati me carbon/carbon composite crucible. Mukugadzirwa kwayo, kurasikirwa kwe carbon/carbon composite crucible yakafukidzwa ne 0.04 mm pachoto chimwe nechimwe, uye hupenyu hwekushanda hunogona kusvika 180 furnace.

Vaongorori vakashandisa nzira yemakemikari kuti vagadzire silicon carbide coating yakafanana pamusoro pecarbon/carbon composite crucible pasi pemamwe mamiriro ekupisa uye dziviriro yegasi rinotakura, vachishandisa silicon dioxide nesilicon metal sezvinhu zvakagadzirwa muchoto chinopisa zvakanyanya. Zvakabuda zvinoratidza kuti kurapwa kwekupisa kwakanyanya hakungogadzirisi kuchena uye simba recoating sic, asiwo kunovandudza zvikuru kuramba kupfeka kwepamusoro pecarbon/carbon composite, uye kunodzivirira ngura pamusoro pecrucible neSiO2 vapor uye volatile oxygen atoms muchoto chesilicon monocrystal. Hupenyu hwebasa recrucible hunowedzerwa ne20% zvichienzaniswa nehwecrucible isina sic coating.

1.2 Kufambira mberi kwekushandiswa uye kutsvagisa muchubhu inotungamira kuyerera

Sirinda yekutungamira iri pamusoro pechitofu (sezvakaratidzwa paMufananidzo 1). Mukuita kwekudhonza kristaro, musiyano wekupisa uripo pakati pemunda nekunze kwemunda wakakura, kunyanya pasi pevhu padyo nesimbi yakanyungudutswa yesilicon, tembiricha ndiyo yakanyanya, uye ngura inobuda nesilicon vapor ndiyo yakanyanya kuipa.

Vaongorori vakagadzira nzira iri nyore uye nzira yakanaka yekudzivirira oxidation yeguide tube anti-oxidation coating uye kugadzirira. Kutanga, layer yesilicon carbide whisker yakakurirwa panzvimbo yayo pa matrix yeguide tube, uye ipapo dense silicon carbide outer layer yakagadzirwa, kuitira kuti SiCw transition layer iumbwe pakati pe matrix ne dense silicon carbide surface layer, sezvakaratidzwa muMufananidzo 3. Coefficient ye thermal expansion yaive pakati pe matrix nesilicon carbide. Inogona kuderedza zvinobudirira thermal stress inokonzerwa nekusawirirana kwe thermal expansion coefficient.

Ongororo iyi inoratidza kuti nekuwedzera kwehuwandu hweSiCw, saizi nehuwandu hwemaburi ari mujira rinodzikira. Mushure meawa gumi yekuoxidation mumhepo ye1100 ℃, mwero wekurasikirwa nehuremu hwemuenzaniso wekuoxidation unongova 0.87% ~ 8.87% chete, uye kuramba kwekuoxidation uye kuramba kupisa kwekupiswa kwejira resilicon carbide zvinovandudzika zvikuru. Maitiro ese ekugadzirira anopedzwa nguva dzose nekushandiswa kwemakemikari, kugadzirira kwesilicon carbide coating kuri nyore kwazvo, uye kushanda kwakakwana kwemuromo wese kunosimbiswa.

Vaongorori vakapa nzira yekusimbisa matrix uye kufukidza pamusoro pechubhu yegirafiti ye czohr monocrystal silicon. Silicon carbide slurry yakawanikwa yakafukidzwa zvakaenzana pamusoro pechubhu yegirafiti yegirafiti nehukobvu hwe30~50 μm nebrashi coating kana nzira yekupenda, uye yakazoiswa muchoto chekupisa chakakwira kuti iite reaction in-situ, tembiricha ye reaction yaive 1850~2300 ℃, uye kuchengetedza kupisa kwaive 2~6h. SiC outer layer inogona kushandiswa muchoto chekukura chekristaro che24 in(60.96 cm), uye tembiricha yekushandisa ndeye 1500 ℃, uye zvakaonekwa kuti hapana hupfu hunopwanyika uye hunodonha pamusoro pechubhu yegirafiti yegirafiti mushure me1500h.

1.3 Kufambira mberi kwekushandiswa uye kutsvagurudza mukushandisa silinda yekudzivirira kupisa

Sechimwe chezvinhu zvakakosha zve monocrystalline silicon thermal field system, insulation cylinder inonyanya kushandiswa kuderedza kurasikirwa nekupisa uye kudzora tembiricha yenzvimbo yethermal field. Sechikamu chinotsigira rusvingo rwemukati rwe insulation ye crystal furnace, silicon vapor corrosion inotungamira mukudonha kweslag uye kutsemuka kwechigadzirwa, izvo zvinozopedzisira zvaita kuti chigadzirwa chisashande.

Kuti vawedzere kusimbaradza kwesilicon vapor corrosion yeC/C-sic composite insulation tube, vaongorori vakaisa zvigadzirwa zveC/C-sic composite insulation tube zvakagadzirwa mu chemical vapor reaction furnace, uye vakagadzira dense silicon carbide coating pamusoro pezvigadzirwa zveC/C-sic composite insulation tube ne chemical vapor deposition process. Zvakawanikwa zvinoratidza kuti, Maitiro aya anogona kudzivirira corrosion yecarbon fiber pakati peC/C-sic composite ne silicon vapor, uye corrosion resistance yesilicon vapor inowedzera ka5 kusvika ka10 zvichienzaniswa necarbon/carbon composite, uye hupenyu hwebasa hwe insulation cylinder uye kuchengetedzeka kwenzvimbo ye thermal field zvakavandudzwa zvikuru.

2. Mhedziso uye tarisiro

Kupfeka kwesilicon carbideIri kushandiswa zvakanyanya muzvinhu zve carbon/carbon thermal field nekuda kwekudzivirira kwayo kwakanyanya oxidation pakupisa kwakanyanya. Nekuwedzera kwehukuru hwezvinhu zve carbon/carbon thermal field zvinoshandiswa mukugadzira monocrystalline silicon, maitiro ekuvandudza kufanana kwe silicon carbide coating pamusoro pezvinhu zve thermal field uye kuvandudza hupenyu hwebasa rezvinhu zve carbon/carbon thermal field rave dambudziko guru rinofanira kugadziriswa.

Kune rumwe rutivi, nekuvandudzwa kweindasitiri yesilicon ine monocrystalline, kudiwa kwezvinhu zvecarbon/carbon thermal field zviri kuwedzerawo, uye SiC nanofibers dzinokurawo pamukati me carbon fibers panguva ye reaction. Kuwanda kwe ablation uye linear ablation rates yeC/ C-ZRC uye C/ C-sic ZrC composites yakagadzirwa nekuyedza ndeye -0.32 mg/s uye 2.57 μm/s, zvichiteerana. Kuwanda uye line ablation rates yeC/ C-sic -ZrC composites ndeye -0.24mg/s uye 1.66 μm/s, zvichiteerana. C/ C-ZRC composites ine SiC nanofibers ine zvirinani ablative properties. Gare gare, mhedzisiro yekabhoni dzakasiyana pakukura kweSiC nanofibers uye mashandiro eSiC nanofibers achisimbisa ablative properties yeC/ C-ZRC composites ichadzidzwa.

Chinoputirwa checarbon/carbon composite coating chakagadzirwa ne chemical vapor permeation process uye in-situ reaction. Chinoputirwa checomposite chakagadzirwa ne silicon carbide coating (100~300μm), silicon coating (10~20μm) uye silicon nitride coating (50~100μm), izvo zvaigona kudzivirira ngura ye silicon vapor pamusoro pemukati me carbon/carbon composite crucible. Mukugadzirwa kwayo, kurasikirwa kwe carbon/carbon composite crucible yakafukidzwa ne 0.04 mm pachoto chimwe nechimwe, uye hupenyu hwekushanda hunogona kusvika 180 furnace.