1 Kugwiritsa ntchito ndi kufufuza kupita patsogolo kwa silicon carbide plating mu carbon/carbon thermal field stimatization
1.1 Kugwiritsa ntchito ndi kupita patsogolo kwa kafukufuku pakukonzekera zombo zophikidwa
Mu gawo la kutentha kwa kristalo imodzi,chophikira cha kaboni/kaboniimagwiritsidwa ntchito makamaka ngati chotengera chonyamulira zinthu za silicon ndipo imakhudzana ndichophikira cha quartz, monga momwe zasonyezedwera pa Chithunzi 2. Kutentha kwa ntchito ya chofufumitsa cha kaboni/kaboni ndi pafupifupi 1450℃, chomwe chimawonongeka kawiri ndi silicon yolimba (silicon dioxide) ndi nthunzi ya silicon, ndipo pamapeto pake chofufumitsacho chimakhala chopyapyala kapena chimakhala ndi ming'alu ya mphete, zomwe zimapangitsa kuti chofufumitsacho chilephereke.
Chophimba chophatikizana cha carbon/carbon composite crucible chinakonzedwa pogwiritsa ntchito njira yolowetsera nthunzi ya mankhwala komanso momwe zimachitikira mkati mwa malo. Chophimba chophatikizanacho chinali ndi silicon carbide covering (100~300μm), silicon covering (10~20μm) ndi silicon nitride covering (50~100μm), zomwe zingathandize kuletsa dzimbiri la nthunzi ya silicon pamwamba pa carbon/carbon composite crucible. Pakupanga, kutayika kwa chophimba chophatikizana cha carbon/carbon composite crucible ndi 0.04 mm pa ng'anjo iliyonse, ndipo nthawi yogwira ntchito imatha kufika nthawi 180 pa ng'anjo iliyonse.
Ofufuzawo adagwiritsa ntchito njira ya mankhwala kuti apange chophimba cha silicon carbide chofanana pamwamba pa chophikira cha carbon/carbon pansi pa kutentha kwina komanso kuteteza mpweya wonyamula, pogwiritsa ntchito silicon dioxide ndi silicon metal ngati zinthu zopangira mu ng'anjo yotentha kwambiri. Zotsatira zake zikuwonetsa kuti chithandizo cha kutentha kwambiri sichimangowonjezera kuyera ndi mphamvu ya chophikira cha sic, komanso chimawongolera kwambiri kukana kwa pamwamba pa chophikira cha carbon/carbon, ndikuletsa dzimbiri la pamwamba pa chophikira ndi nthunzi ya SiO2 ndi maatomu a okosijeni osasunthika mu ng'anjo ya silicon ya monocrystal. Moyo wa ntchito ya chophikiracho umawonjezeka ndi 20% poyerekeza ndi cha chophikiracho chopanda chophikira cha sic.
1.2 Kugwiritsa ntchito ndi kupita patsogolo kwa kafukufuku mu chubu chotsogolera kayendedwe ka madzi
Silinda yotsogolera ili pamwamba pa chotenthetsera (monga momwe zasonyezedwera pa Chithunzi 1). Mu ndondomeko yokoka kristalo, kusiyana kwa kutentha pakati pa mkati ndi kunja kwa munda kumakhala kwakukulu, makamaka pansi pa nthaka pali pafupi ndi zinthu zosungunuka za silicon, kutentha kumakhala kwakukulu kwambiri, ndipo dzimbiri lochokera ku nthunzi ya silicon ndilo lalikulu kwambiri.
Ofufuzawa adapanga njira yosavuta komanso yolimbanirana bwino ndi okosijeni ya chubu chotsogolera komanso njira yokonzekera yolimbana ndi okosijeni. Choyamba, wosanjikiza wa silicon carbide whisker unakulitsidwa pamalo ozungulira chubu chotsogolera, kenako wosanjikiza wakunja wa silicon carbide wokhuthala unakonzedwa, kotero kuti wosanjikiza wa SiCw transition unapangidwa pakati pa matrix ndi wosanjikiza wa pamwamba wa silicon carbide wokhuthala, monga momwe zasonyezedwera pa Chithunzi 3. Coefficient of thermal expansion inali pakati pa matrix ndi silicon carbide. Itha kuchepetsa bwino kupsinjika kwa kutentha komwe kumachitika chifukwa cha kusalingana kwa coefficient of thermal expansion.
Kusanthula kukuwonetsa kuti ndi kuchuluka kwa SiCw, kukula ndi kuchuluka kwa ming'alu mu chophimbacho kumachepa. Pambuyo pa oxidation ya maola 10 mu mpweya wa 1100 ℃, kuchuluka kwa kulemera kwa chitsanzo chophimbacho ndi 0.87% ~ 8.87% yokha, ndipo kukana kwa oxidation ndi kukana kutentha kwa chophimba cha silicon carbide kumawonjezeka kwambiri. Njira yonse yokonzekera imatsirizidwa mosalekeza ndi kuyika kwa nthunzi ya mankhwala, kukonzekera kwa silicon carbide kumakhala kosavuta kwambiri, ndipo magwiridwe antchito a nozzle yonse amalimbikitsidwa.
Ofufuzawo adapereka njira yolimbikitsira matrix ndi kuphimba pamwamba pa chubu chotsogolera cha graphite cha czohr monocrystal silicon. Sulufu ya silicon carbide yomwe idapezeka idakutidwa mofanana pamwamba pa chubu chotsogolera cha graphite ndi makulidwe a 30 ~ 50 μm pogwiritsa ntchito burashi kapena njira yopopera, kenako nkuyikidwa mu ng'anjo yotentha kwambiri kuti ichitike mkati, kutentha kwa reaction kunali 1850 ~ 2300 ℃, ndipo kusungidwa kwa kutentha kunali 2 ~ 6 h. SiC external layer ingagwiritsidwe ntchito mu ng'anjo ya 24 in (60.96 cm) single crystal growth, ndipo kutentha kogwiritsidwa ntchito ndi 1500 ℃, ndipo zapezeka kuti palibe ming'alu ndi ufa wogwa pamwamba pa silinda yotsogolera ya graphite pambuyo pa 1500 h.
1.3 Kugwiritsa ntchito ndi kufufuza patsogolo pa silinda yotetezera kutentha
Monga chimodzi mwa zigawo zofunika kwambiri za monocrystalline silicon thermal field system, silinda yotenthetsera imagwiritsidwa ntchito makamaka kuchepetsa kutaya kutentha ndikuwongolera kutentha kwa malo otentha. Monga gawo lothandizira la mkati mwa khoma lotenthetsera la ng'anjo imodzi ya kristalo, dzimbiri la silicon vapor limayambitsa kutsika kwa slag ndi kusweka kwa chinthucho, zomwe pamapeto pake zimapangitsa kuti chinthucho chilephereke.
Pofuna kupititsa patsogolo kukana kwa dzimbiri kwa nthunzi ya silicon ya chubu choteteza ku C/ C-sic, ofufuzawo adayika zinthu zoteteza ku C/ C-sic zomwe zakonzedwa mu ng'anjo ya vapor reaction, ndikukonza zokutira za silicon carbide pamwamba pa zinthu zoteteza ku C/ C-sic pogwiritsa ntchito njira yosungira nthunzi ya mankhwala. Zotsatira zake zikuwonetsa kuti, njirayi imatha kuletsa bwino dzimbiri la kaboni pakati pa C/ C-sic pogwiritsa ntchito nthunzi ya silicon, ndipo kukana kwa dzimbiri kwa nthunzi ya silicon kumawonjezeka ndi nthawi 5 mpaka 10 poyerekeza ndi carbon/carbon composite, ndipo moyo wa silinda yoteteza ku kuzizira komanso chitetezo cha malo otentha zimawonjezeka kwambiri.
2. Mapeto ndi chiyembekezo
Chophimba cha silicon carbideimagwiritsidwa ntchito kwambiri mu zinthu zotenthetsera mpweya za carbon/carbon chifukwa cha kukana kwake kutentha kwambiri. Chifukwa cha kukula kwa zinthu zotenthetsera mpweya za carbon/carbon zomwe zimagwiritsidwa ntchito popanga silicon ya monocrystalline, momwe mungasinthire kufanana kwa silicon carbide pamwamba pa zinthu zotenthetsera mpweya ndikukweza moyo wa zinthu zotenthetsera mpweya za carbon/carbon lakhala vuto lofunika kuthetsedwa mwachangu.
Kumbali inayi, chifukwa cha chitukuko cha makampani opanga silicon a monocrystalline, kufunikira kwa zinthu zotentha za carbon/carbon zomwe zimakhala zoyera kwambiri kukukulirakuliranso, ndipo ma nanofiber a SiC amameranso pa ulusi wamkati wa carbon panthawi ya reaction. Kuchuluka kwa ablation ndi linear ablation ya C/ C-ZRC ndi C/ C-sic ZrC composites zomwe zakonzedwa ndi zoyeserera ndi -0.32 mg/s ndi 2.57 μm/s, motsatana. Kuchuluka kwa ablation ndi line ablation ya ma composites a C/ C-sic -ZrC ndi -0.24mg/s ndi 1.66 μm/s, motsatana. Ma composites a C/ C-ZRC okhala ndi ma nanofiber a SiC ali ndi makhalidwe abwino a ablative. Pambuyo pake, zotsatira za magwero osiyanasiyana a carbon pakukula kwa ma nanofiber a SiC ndi njira ya ma nanofiber a SiC omwe akulimbitsa mphamvu za ablative za ma composites a C/ C-ZRC zidzaphunziridwa.
Chophimba chophatikizana cha carbon/carbon composite crucible chinakonzedwa pogwiritsa ntchito njira yolowetsera nthunzi ya mankhwala komanso momwe zimachitikira mkati mwa malo. Chophimba chophatikizanacho chinali ndi silicon carbide covering (100~300μm), silicon covering (10~20μm) ndi silicon nitride covering (50~100μm), zomwe zingathandize kuletsa dzimbiri la nthunzi ya silicon pamwamba pa carbon/carbon composite crucible. Pakupanga, kutayika kwa chophimba chophatikizana cha carbon/carbon composite crucible ndi 0.04 mm pa ng'anjo iliyonse, ndipo nthawi yogwira ntchito imatha kufika nthawi 180 pa ng'anjo iliyonse.
Nthawi yotumizira: Feb-22-2024