Isicelo kunye nenkqubela phambili yophando ye-SiC yokugqoka kwi-carbon / carbon thermal field materials for monocrystalline silicon-2

1 Ukusetyenziswa kunye nenkqubela phambili yophando lwe-silicon carbide coating kwi-carbon / carbon thermal field materials

1.1 Isicelo kunye nenkqubela phambili yophando ekulungiseleleni i-crucible

Kwintsimi ye-crystal eyodwa ye-thermal, iikhabhoni / ikhabhoni crucibleisetyenziswa ikakhulu njengesitya sokuthwala sezinto zesilicon kwaye inxibelelana nei-quartz crucible, njengoko kuboniswe kuMzobo 2. Ukushisa okusebenzayo kwekhabhoni / i-carbon crucible malunga ne-1450 ℃, ephantsi kokutshatyalaliswa kabini kwe-silicon eqinile (i-silicon dioxide) kunye ne-silicon vapor, kwaye ekugqibeleni i-crucible iba yincinci okanye ine-ring crack, ebangela ukungaphumeleli kwe-crucible.

I-composite coating ye-carbon / carbon composite crucible yalungiswa yinkqubo yokungena kwekhemikhali yomphunga kunye ne-in-situ reaction. I-composite coating yenziwe nge-silicon carbide coating (100 ~ 300μm), i-silicon yokwambathisa (10 ~ 20μm) kunye ne-silicon nitride yokugqoka (50 ~ 100μm), enokuthintela ngokufanelekileyo ukubola komphunga we-silicon kumphezulu wangaphakathi we-carbon / carbon composite crucible. Kwinkqubo yokuvelisa, ukulahlekelwa kwe-carbon composite coated carbon / carbon composite crucible yi-0.04 mm kwisithando somlilo, kwaye ubomi benkonzo bunokufikelela kumaxesha angama-180.

Abaphandi basebenzise indlela yokusabela kweekhemikhali ukuvelisa i-silicon carbide coating efanayo kumphezulu we-carbon / carbon composite crucible phantsi kweemeko ezithile zokushisa kunye nokukhuselwa kwegesi ephetheyo, usebenzisa i-silicon dioxide kunye ne-silicon metal njengezinto eziluhlaza kwisithando somlilo esiphezulu sokushisa. Iziphumo zibonisa ukuba unyango oluphezulu lweqondo lokushisa aluphuculi nje kuphela ukucoceka kunye namandla e-coating ye-sic, kodwa kwakhona kuphucula kakhulu ukunyanzeliswa komgangatho wekhabhoni / i-carbon composite, kunye nokuthintela ukubola komphezulu we-crucible yi-SiO vapor kunye ne-athomu ye-oksijini eguqukayo kwisithando somlilo se-silicon ye-monocrystal. Ubomi benkonzo ye-crucible bunyuswe nge-20% xa kuthelekiswa nelo bhobho ngaphandle kwe-sic coating.

1.2 Isicelo kunye nenkqubela phambili yophando kwityhubhu yesikhokelo sokuhamba

I-cylinder yesikhokelo ibekwe ngaphezu kwe-crucible (njengoko kuboniswe kuMfanekiso 1). Kwinkqubo yokutsalwa kwekristale, umahluko weqondo lobushushu phakathi kwangaphakathi nangaphandle kwebala mkhulu, ngakumbi umphezulu ongezantsi ukufutshane nezinto ezityhidiweyo zesilicon, iqondo lobushushu lelona liphezulu, kwaye ukudleka komphunga wesilicon yeyona nto imbi kakhulu.

Abaphandi baqulunqa inkqubo elula kunye nokuchasana kwe-oxidation ye-tube yesikhokelo yokulwa ne-oxidation kunye nendlela yokulungiselela. Okokuqala, umgca we-silicon carbide whisker wawukhuliswe kwi-matrix ye-tube yesikhokelo, kwaye emva koko i-silicon carbide yangaphandle yangaphandle yalungiswa, ukwenzela ukuba i-SiCw inguqu yenguqu yenziwe phakathi kwe-matrix kunye ne-dense silicon carbide surface layer, njengoko kuboniswe kuMfanekiso 3. I-coefficient yokwandiswa kwe-thermal yayiphakathi kwe-silicon matrix. Inokunciphisa ngokufanelekileyo uxinzelelo lwe-thermal olubangelwa ukungahambi kakuhle kwe-coefficient yokwandisa i-thermal.

Uhlalutyo lubonisa ukuba ngokunyuka komxholo we-SiCw, ubungakanani kunye nenani leentanda kwi-coating liyancipha. Emva kwe-oxidation ye-10h kwi-1100 ℃ emoyeni, izinga lokulahleka kobunzima besampulu yokugquma kuphela yi-0.87% ~ 8.87%, kunye nokumelana ne-oxidation kunye nokuxhatshazwa kwe-thermal ye-silicon carbide coating iphuculwe kakhulu. Yonke inkqubo yokulungiselela igqityezelwa ngokuqhubekayo nge-chemical vapor deposition, ukulungiswa kwe-silicon carbide coating kulula kakhulu, kwaye ukusebenza okubanzi kwe-nozzle yonke kuyaqiniswa.

Abaphandi bacebise indlela yokomelezwa kwe-matrix kunye nokugquma komhlaba wetyhubhu yegraphite ye-czohr monocrystal silicon. I-silicon carbide slurry efunyenweyo yayigqunywe ngokulinganayo kumphezulu wetyhubhu yesikhokelo yegraphite kunye nobukhulu bokugquma obungama-30 ~ 50 μm ngebrashi yokwaleka okanye indlela yokutshiza yokugquma, kwaye emva koko ibekwe kwiziko lobushushu obuphezulu bokusabela kwi-situ, ubushushu bokusabela yayiyi-1850 ~ 2300 ℃, kunye nokugcinwa kobushushu 2 ~ 6h. Umaleko wangaphandle we-SiC ungasetyenziselwa kwi-24 kwi-(60.96 cm) yesithando somlilo esisodwa sokukhula kwekristale, kwaye ubushushu bokusetyenziswa yi-1500 ℃, kwaye kufunyenwe ukuba akukho ukuqhekeka kunye nomgubo owela phezu komphezulu we-cylinder yesikhokelo segraphite emva kwe-1500h.

1.3 Isicelo kunye nenkqubela phambili yophando kwi-insulation cylinder

Njengenye yezinto eziphambili zenkqubo ye-monocrystalline silicon thermal field, i-cylinder yokugquma isetyenziselwa ukunciphisa ilahleko yobushushu kunye nokulawula ukuthambekela kobushushu bommandla we-thermal field. Njengenxalenye exhasayo yomaleko wangaphakathi wokugquma eludongeni lweziko lekristale enye, ukubola komphunga wesilicon kukhokelela ekuweni kwe-slag kunye nokuqhekeka kwemveliso, ethi ekugqibeleni ikhokelele ekungaphumeleli kwemveliso.

Ukuze kwandiswe ngakumbi ukuxhathisa umphunga we-silicon yetyhubhu ye-C/C-sic ehlanganisiweyo yokugquma, abaphandi babeka iimveliso zetyhubhu ehlanganisiweyo ye-C/C-sic kwisithando somlilo sekhemikhali, kwaye balungisa i-silicon eshinyeneyo yokwaleka phezu komphezulu we-C/C-sic imveliso yetyhubhu edityanisiweyo yokugquma ngenkqubo yokubeka umphunga ngemichiza. Iziphumo zibonisa ukuba, Inkqubo inokuthintela ngokufanelekileyo ukubola kwe-carbon fiber kwi-core of C / C-sic composite ngumphunga we-silicon, kunye nokumelana nokunyuka komphunga we-silicon kwanda ngamaxesha angama-5 ukuya kwayi-10 xa kuthelekiswa nekhabhoni / i-carbon composite, kunye nobomi benkonzo ye-cylinder yokufakelwa kunye nokhuseleko lwendawo ephuculweyo ye-thermal.

2.Isiphelo kunye nethemba

Ukugquma kwe-silicon carbideisetyenziswa kakhulu nangakumbi kwi-carbon/carbon thermal field materials ngenxa yokumelana ne-oxidation egqwesileyo kubushushu obuphezulu. Ngokunyuka kobungakanani bekhabhoni / i-carbon thermal field materials ezisetyenziswa kwimveliso ye-silicon ye-monocrystalline, indlela yokuphucula ukufana kwe-silicon carbide yokugqoka phezu kwezinto eziphathekayo ze-thermal kunye nokuphucula ubomi benkonzo ye-carbon / carbon thermal field materials ibe yingxaki engxamisekileyo ukuba isonjululwe.

Kwelinye icala, ngophuhliso lweshishini le-silicon le-monocrystalline, imfuno ye-carbon-high-purity / carbon thermal field materials iyanda, kwaye ii-nanofibers ze-SiC nazo zikhuliswe kwimicu yekhabhoni yangaphakathi ngexesha lokuphendula. Ukukhutshwa kobunzima kunye nemilinganiselo yokunciphisa umgca weC / C-ZRC kunye neC / C-sic ZrC i-composites elungiselelwe yizilingo -0.32 mg / s kunye ne-2.57 μm / s, ngokulandelanayo. Ubunzima kunye nomgca wokuchithwa kwemilinganiselo ye-C / C-sic -ZrC edibeneyo -0.24mg / s kunye ne-1.66 μm / s, ngokulandelanayo. I-C/ C-ZRC idibanisa kunye ne-SiC nanofibers zineempawu ezingcono zokukhupha. Kamva, iziphumo zemithombo eyahlukeneyo yekhabhoni ekukhuleni kwe-SiC nanofibers kunye ne-mechanism ye-SiC nanofibers yokuqinisa iipropati ze-ablative ze-C / C-ZRC ezihlanganisiweyo ziya kufundwa.

I-composite coating ye-carbon / carbon composite crucible yalungiswa yinkqubo yokungena kwekhemikhali yomphunga kunye ne-in-situ reaction. I-composite coating yenziwe nge-silicon carbide coating (100 ~ 300μm), i-silicon yokwambathisa (10 ~ 20μm) kunye ne-silicon nitride yokugqoka (50 ~ 100μm), enokuthintela ngokufanelekileyo ukubola komphunga we-silicon kumphezulu wangaphakathi we-carbon / carbon composite crucible. Kwinkqubo yokuvelisa, ukulahlekelwa kwe-carbon composite coated carbon / carbon composite crucible yi-0.04 mm kwisithando somlilo, kwaye ubomi benkonzo bunokufikelela kumaxesha angama-180.