Minti uku don koyo game da silicon carbide (SIC)

Gabatarwa naSilicon Carbide

Silicon carbide (SIC) yana da yawan 3.2g/cm3. Silicon carbide na halitta yana da matuƙar wuya kuma galibi ana haɗa shi ta hanyar wucin gadi. Dangane da rarrabuwa daban-daban na tsarin lu'ulu'u, za a iya raba silicon carbide zuwa rukuni biyu: α SiC da β SiC. Semiconductor na ƙarni na uku wanda silicon carbide (SIC) ke wakilta yana da yawan mita, inganci mai yawa, ƙarfin lantarki mai yawa, juriya mai yawa, juriya mai yawa da juriya mai ƙarfi. Ya dace da manyan buƙatun dabaru na kiyaye makamashi da rage fitar da hayaki, masana'antu masu wayo da tsaron bayanai. An yi shi ne don tallafawa kirkire-kirkire da ci gaba mai zaman kansa da sauye-sauyen hanyoyin sadarwa na wayar hannu na zamani, sabbin motocin makamashi, jiragen ƙasa masu sauri, Intanet na makamashi da sauran masana'antu. Abubuwan da aka inganta na asali da abubuwan lantarki sun zama abin da aka fi mayar da hankali a kai a fagen fasahar semiconductor ta duniya da gasa a masana'antu. A cikin 2020, tsarin tattalin arziki da ciniki na duniya yana cikin lokacin gyara, kuma yanayin ciki da waje na tattalin arzikin China ya fi rikitarwa da tsanani, amma masana'antar semiconductor na ƙarni na uku a duniya yana ƙaruwa da wannan yanayi. Ya kamata a fahimci cewa masana'antar silicon carbide ta shiga wani sabon matakin ci gaba.

Silicon carbideaikace-aikace

Aikace-aikacen silicon carbide a masana'antar semiconductor silicon carbide semiconductor sarkar masana'antar semiconductor galibi ya haɗa da foda mai tsarki na silicon carbide, ƙaramin crystal, epitaxial, na'urar wutar lantarki, marufi na module da aikace-aikacen ƙarshe, da sauransu

1. Tsarin lu'ulu'u guda ɗaya shine kayan tallafi, kayan aiki mai sarrafawa da kuma tushen girma na epitaxial na semiconductor. A halin yanzu, hanyoyin girma na lu'ulu'u guda ɗaya na SiC sun haɗa da canja wurin iskar gas na zahiri (PVT), matakin ruwa (LPE), ajiyar tururin sinadarai mai zafi (htcvd) da sauransu. 2. takardar epitaxial ta silicon carbide ta epitaxial tana nufin haɓakar fim ɗin lu'ulu'u guda ɗaya (layin epitaxial) tare da wasu buƙatu da kuma daidai da yanayin substrate. A aikace, na'urorin semiconductor masu faɗi suna kusan duk akan layin epitaxial, kuma kwakwalwan silicon carbide da kansu ana amfani da su ne kawai azaman substrates, gami da layukan Gan epitaxial.

3. tsarki mai girmaSiCFoda abu ne da ake amfani da shi wajen haɓaka lu'ulu'u guda ɗaya na silicon carbide ta hanyar hanyar PVT. Tsarkakewar samfurinsa yana shafar ingancin girma da halayen lantarki na lu'ulu'u guda ɗaya na SiC.

4. An yi na'urar wutar lantarki da silicon carbide, wanda ke da halaye na juriya ga zafin jiki mai yawa, yawan mita da kuma inganci mai yawa. Dangane da yanayin aikin na'urar,SiCNa'urorin wutar lantarki sun haɗa da diodes na wutar lantarki da bututun canza wutar lantarki.

5. A cikin aikace-aikacen semiconductor na ƙarni na uku, fa'idodin aikace-aikacen ƙarshe shine cewa suna iya ƙara wa semiconductor na GaN. Saboda fa'idodin ingantaccen juyawa, ƙarancin halayen dumama da ƙananan na'urorin SiC, buƙatar masana'antar da ke ƙasa tana ci gaba da ƙaruwa, wanda ke da yanayin maye gurbin na'urorin SiO2. Yanayin ci gaban kasuwar silicon carbide na yanzu yana ci gaba da haɓakawa. Silicon carbide yana jagorantar aikace-aikacen kasuwar haɓaka semiconductor na ƙarni na uku. An shigar da samfuran semiconductor na ƙarni na uku cikin sauri, filayen aikace-aikacen suna faɗaɗa akai-akai, kuma kasuwa tana girma cikin sauri tare da haɓaka kayan lantarki na mota, sadarwa ta 5g, samar da wutar lantarki mai sauri da aikace-aikacen soja.