Imizuzu emithathu yokufunda nge-silicon carbide (SIC)

Intshayelelo yeiSilicon Carbide

I-Silicon carbide (SIC) inobunzima obuyi-3.2g/cm3. I-silicon carbide yendalo ayifumaneki lula kwaye yenziwa kakhulu ngendlela yokwenziwa. Ngokwendlela eyahlukileyo yokwahlulahlula ulwakhiwo lwekristale, i-silicon carbide inokwahlulwa ibe ziindidi ezimbini: i-α SiC kunye ne-β SiC. I-semiconductor yesizukulwana sesithathu emelwe yi-silicon carbide (SIC) inomlinganiselo ophezulu, ukusebenza kakuhle, amandla aphezulu, ukumelana noxinzelelo oluphezulu, ukumelana nobushushu obuphezulu kunye nokumelana okunamandla kwemitha. Ifanelekile kwiimfuno eziphambili zesicwangciso sokugcina amandla kunye nokunciphisa ukukhutshwa komoya, ukwenziwa ngobuchule kunye nokhuseleko lolwazi. Yeyokuxhasa uphuhliso oluzimeleyo kunye nophuhliso kunye nokuguqulwa konxibelelwano lweselula lwesizukulwana esitsha, izithuthi zamandla amatsha, oololiwe abahamba ngesantya esiphezulu, amandla e-intanethi kunye namanye amashishini. Izixhobo eziphambili eziphuculweyo kunye nezinto ze-elektroniki ziye zaba yinto ephambili kubuchwepheshe be-semiconductor behlabathi kunye nokhuphiswano lweshishini. Ngo-2020, ipateni yoqoqosho lwehlabathi kunye norhwebo ikwixesha lokuhlaziywa, kwaye imeko-bume yangaphakathi neyangaphandle yoqoqosho lwaseTshayina iyinkimbinkimbi kwaye inzima, kodwa ishishini le-semiconductor lesizukulwana sesithathu kwihlabathi likhula ngokuchaseneyo nomkhwa. Kufuneka kuqatshelwe ukuba ishishini le-silicon carbide lingene kwinqanaba elitsha lophuhliso.

I-silicon carbideisicelo

Isicelo se-silicon carbide kushishino lwe-semiconductor, uthotho lwe-silicon carbide semiconductor luquka ikakhulu i-silicon carbide umgubo wokucoceka okuphezulu, i-single crystal substrate, i-epitaxial, isixhobo samandla, ukupakisha imodyuli kunye nesicelo sesiphelo, njl.

1. I-single crystal substrate zizinto ezixhasayo, izinto eziqhubayo kunye ne-epitaxial growth substrate ye-semiconductor. Okwangoku, iindlela zokukhula ze-SiC single crystal ziquka ukudluliselwa kwegesi ebonakalayo (PVT), i-liquid phase (LPE), i-high temperature chemical vapor deposition (htcvd) njalo njalo. 2. I-epitaxial silicon carbide epitaxial sheet ibhekisa ekukhuleni kwefilimu enye yekristale (epitaxial layer) eneemfuno ezithile kunye nolwalathiso olufanayo ne-substrate. Kwindlela yokusebenza, izixhobo ze-semiconductor ze-wide band gap phantse zonke zikwi-epitaxial layer, kwaye ii-silicon carbide chips ngokwazo zisetyenziswa kuphela njenge-substrates, kubandakanya ii-Gan epitaxial layers.

3. ubunyulu obuphezuluI-SiCUmgubo sisixhobo esisetyenziswa ekukhuleni kwe-silicon carbide single crystal ngendlela ye-PVT. Ubunyulu bemveliso yawo buchaphazela ngokuthe ngqo umgangatho wokukhula kunye neempawu zombane ze-SiC single crystal.

4. isixhobo samandla senziwe nge-silicon carbide, eneempawu zokumelana nobushushu obuphezulu, i-frequency ephezulu kunye nokusebenza kakuhle okuphezulu. Ngokwendlela esebenza ngayo isixhobo,I-SiCIzixhobo zamandla ziquka ikakhulu ii-power diodes kunye neetyhubhu zokutshintsha amandla.

5. kwisicelo se-semiconductor sesizukulwana sesithathu, iingenelo zesicelo sokugqibela kukuba zinokuzalisa i-semiconductor yeGaN. Ngenxa yeenzuzo zokusebenza kakuhle kokuguqula, iimpawu zokufudumeza eziphantsi kunye nokukhanya kwezixhobo zeSiC, imfuno yeshishini elisezantsi iyaqhubeka nokukhula, elinomkhwa wokutshintsha izixhobo zeSiO2. Imeko yangoku yophuhliso lwemarike ye-silicon carbide iyaqhubeka nokukhula. I-Silicon carbide ikhokela isicelo semarike yophuhliso lwe-semiconductor sesizukulwana sesithathu. Iimveliso ze-semiconductor zesizukulwana sesithathu zingeniswe ngokukhawuleza, amasimi esicelo ayanda rhoqo, kwaye imakethi ikhula ngokukhawuleza ngophuhliso lwe-elektroniki yeemoto, unxibelelwano lwe-5g, umbane wokutshaja ngokukhawuleza kunye nokusetyenziswa komkhosi.