Nkeji atọ iji mụta maka silicon carbide (SIC)

Okwu Mmalite nkeSilicon Carbide

Silicon carbide (SIC) nwere njupụta nke 3.2g/cm3. Silicon carbide eke dị oke ụkọ ma a na-ejikarị usoro arụ ọrụ emepụta ya. Dịka nhazi kristal dị iche iche si dị, enwere ike kewaa silicon carbide n'ime ụdị abụọ: α SiC na β SiC. Semiconductor ọgbọ nke atọ nke silicon carbide (SIC) nọchitere anya nwere ugboro ole dị elu, arụmọrụ dị elu, ike dị elu, iguzogide nrụgide dị elu, iguzogide okpomọkụ dị elu na iguzogide radieshon siri ike. Ọ dabara maka mkpa atụmatụ dị mkpa nke nchekwa ike na mbelata ikuku, nrụpụta nwere ọgụgụ isi na nchekwa ozi. Ọ bụ iji kwado ihe ọhụrụ na mmepe onwe onye na mgbanwe nke nkwukọrịta mkpanaka ọgbọ ọhụrụ, ụgbọ ala ike ọhụrụ, ụgbọ okporo ígwè dị elu, Intanet ike na ụlọ ọrụ ndị ọzọ Ihe ndị bụ isi emelitere na akụkụ eletrọniki aghọọla isi ihe nke teknụzụ semiconductor zuru ụwa ọnụ na asọmpi ụlọ ọrụ. Na 2020, usoro akụ na ụba na azụmaahịa zuru ụwa ọnụ nọ n'oge mgbanwe, gburugburu ebe obibi na mpụga nke akụ na ụba China dịkwa mgbagwoju anya ma sie ike, mana ụlọ ọrụ semiconductor ọgbọ nke atọ n'ụwa na-eto megide usoro ahụ. Ọ dị mkpa ka a mata na ụlọ ọrụ silicon carbide abanyela n'ọkwa mmepe ọhụrụ.

Silicon carbidengwa

Ngwa silicon carbide na ụlọ ọrụ semiconductor silicon carbide semiconductor ụlọ ọrụ agbụ ígwè gụnyere silicon carbide ntụ ntụ dị ọcha, otu kristal substrate, epitaxial, ngwaọrụ ike, nkwakọ ngwaahịa modulu na ngwa njedebe, wdg.

1. otu kristal substrate bụ ihe nkwado, ihe na-eduzi na epitaxial uto substrate nke semiconductor. Ugbu a, ụzọ uto nke SiC otu kristal gụnyere nnyefe gas anụ ahụ (PVT), mmiri mmiri (LPE), okpomọkụ dị elu nke na-etinye vapor kemịkalụ (htcvd) na ndị ọzọ. 2. mpempe akwụkwọ epitaxial silicon carbide epitaxial na-ezo aka na uto nke otu kristal film (epitaxial layer) nwere ụfọdụ ihe achọrọ na otu ntụzịaka dị ka substrate. N'ọrụ bara uru, ngwaọrụ semiconductor gap band band niile dị na epitaxial layer, a na-ejikwa chips silicon carbide n'onwe ha naanị dị ka substrates, gụnyere oyi akwa Gan epitaxial.

3. ịdị ọcha dị eluSiCNtụ ntụ bụ ihe eji eme ka kristal silicon carbide too site na usoro PVT. Ịdị ọcha nke ngwaahịa ya na-emetụta kpọmkwem ogo uto na njirimara eletriki nke kristal SiC otu.

4. Ejiri silicon carbide mee ngwaọrụ ike ahụ, nke nwere njirimara nke iguzogide okpomọkụ dị elu, ugboro ugboro dị elu na arụmọrụ dị elu. Dịka ụdị ọrụ nke ngwaọrụ ahụ si dị,SiCNgwaọrụ ike gụnyerekarị diode ike na tubes mgba ọkụ ike.

5. N'ime ngwa semiconductor nke ọgbọ nke atọ, uru nke ngwa njedebe bụ na ha nwere ike imezu semiconductor GaN. N'ihi uru nke arụmọrụ mgbanwe dị elu, njirimara okpomọkụ dị ala na ngwa SiC dị fechaa, ọchịchọ nke ụlọ ọrụ dị n'okpuru ala na-aga n'ihu na-abawanye, nke nwere usoro nke dochie ngwaọrụ SiO2. Ọnọdụ ugbu a nke mmepe ahịa silicon carbide na-etolite mgbe niile. Silicon carbide na-eduga ngwa ahịa mmepe semiconductor nke ọgbọ nke atọ. Ngwaahịa semiconductor nke ọgbọ nke atọ abanyela ngwa ngwa, ubi ngwa na-agbasa mgbe niile, ahịa na-eto ngwa ngwa na mmepe nke ngwa eletrọniki ụgbọala, nkwukọrịta 5g, ọkọnọ ike chaja ngwa ngwa na ngwa agha.