Imizuzu emithathu yokufunda nge-silicon carbide (SIC)

Isingeniso sikaI-Silicon Carbide

I-Silicon carbide (SIC) inobuningi obungu-3.2g/cm3. I-silicon carbide yemvelo ayivamile kakhulu futhi ikhiqizwa kakhulu ngendlela yokwenziwa. Ngokwezinhlobo ezahlukene zesakhiwo sekristalu, i-silicon carbide ingahlukaniswa ngezigaba ezimbili: i-α SiC kanye ne-β SiC. I-semiconductor yesizukulwane sesithathu emelelwa yi-silicon carbide (SIC) inomkhathi ophezulu, ukusebenza kahle okuphezulu, amandla aphezulu, ukumelana nokucindezela okuphezulu, ukumelana nokushisa okuphezulu kanye nokumelana okunamandla kwemisebe. Ifanele izidingo ezinkulu zesu zokonga amandla kanye nokunciphisa ukukhishwa, ukukhiqiza okuhlakaniphile kanye nokuphepha kolwazi. Iwukusekela ukusungula izinto ezintsha ezizimele kanye nentuthuko kanye nokuguqulwa kokuxhumana kweselula kwesizukulwane esisha, izimoto zamandla amasha, izitimela zesitimela ezisheshayo, amandla i-inthanethi kanye neminye imboni. Izinto ezithuthukisiwe eziyinhloko kanye nezingxenye ze-elekthronikhi sezibe yindawo ebalulekile yobuchwepheshe be-semiconductor bomhlaba wonke kanye nomncintiswano wemboni. Ngo-2020, iphethini yezomnotho kanye nokuhweba yomhlaba wonke isesikhathini sokuvuselelwa, futhi indawo yangaphakathi neyangaphandle yomnotho waseShayina iyinkimbinkimbi futhi inzima, kodwa imboni ye-semiconductor yesizukulwane sesithathu emhlabeni ikhula ngokumelene nomkhuba. Kudingeka kuqashelwe ukuthi imboni ye-silicon carbide isingene esigabeni esisha sentuthuko.

I-silicon carbideisicelo

Ukusetshenziswa kwe-silicon carbide embonini ye-semiconductor uchungechunge lwe-silicon carbide semiconductor embonini luhlanganisa kakhulu i-silicon carbide high purity powder, i-single crystal substrate, i-epitaxial, idivayisi yamandla, ukufakwa kwemodyuli kanye nesicelo se-terminal, njll.

1. I-substrate yekristalu eyodwa iyinto yokusekela, izinto eziqhubayo kanye ne-substrate yokukhula kwe-epitaxial ye-semiconductor. Njengamanje, izindlela zokukhula ze-SiC single crystal zifaka phakathi ukudluliselwa kwegesi ngokomzimba (i-PVT), isigaba soketshezi (i-LPE), ukufakwa komphunga wamakhemikhali okushisa okuphezulu (i-htcvd) njalo njalo. 2. Ishidi le-epitaxial le-silicon carbide le-epitaxial libhekisela ekukhuleni kwefilimu yekristalu eyodwa (ungqimba lwe-epitaxial) enezidingo ezithile kanye nokuma okufanayo ne-substrate. Ekusetshenzisweni okungokoqobo, amadivayisi e-semiconductor e-wide band gap cishe wonke asengqimbeni ye-epitaxial, kanti ama-silicon carbide chips ngokwawo asetshenziswa kuphela njenge-substrate, kufaka phakathi izendlalelo ze-Gan epitaxial.

3. ubumsulwa obuphezuluI-SiCImpuphu iyinto eluhlaza yokukhula kwekristalu eyodwa ye-silicon carbide ngendlela ye-PVT. Ukuhlanzeka komkhiqizo wayo kuthinta ngqo ikhwalithi yokukhula kanye nezakhiwo zikagesi zekristalu eyodwa ye-SiC.

4. Idivayisi yamandla yenziwe nge-silicon carbide, enezici zokumelana nokushisa okuphezulu, imvamisa ephezulu kanye nokusebenza kahle okuphezulu. Ngokwesimo sokusebenza sedivayisi,I-SiCAmadivayisi kagesi afaka phakathi ama-diode kagesi kanye namashubhu okushintsha amandla kagesi.

5. ekusetshenzisweni kwe-semiconductor yesizukulwane sesithathu, izinzuzo zokusetshenziswa kokugcina ukuthi zingahambisana ne-semiconductor ye-GaN. Ngenxa yezinzuzo zokusebenza kahle kokuguqulwa okuphezulu, izici zokushisa eziphansi kanye nokukhanya kwamadivayisi e-SiC, isidingo semboni engezansi siyaqhubeka nokukhula, okunomkhuba wokufaka esikhundleni samadivayisi e-SiO2. Isimo samanje sokuthuthukiswa kwemakethe ye-silicon carbide siyaqhubeka nokukhula. I-Silicon carbide ihola isicelo semakethe yokuthuthukiswa kwe-semiconductor yesizukulwane sesithathu. Imikhiqizo ye-semiconductor yesizukulwane sesithathu ingeniswe ngokushesha, amasimu okusetshenziswa ayanda njalo, futhi imakethe ikhula ngokushesha ngokuthuthukiswa kwe-elekthronikhi yezimoto, ukuxhumana kwe-5g, ukunikezwa kwamandla okushaja okusheshayo kanye nokusetshenziswa kwezempi. .