Maminitsi matatu ekudzidza nezve silicon carbide (SIC)

Sumo yeSilicon Carbide

Silicon carbide (SIC) ine huwandu hwe3.2g/cm3. Silicon carbide yechisikigo haiwanzo kuwanikwa uye inonyanya kugadzirwa nenzira yekugadzira. Zvichienderana nekupatsanurwa kwakasiyana kwechimiro chekristaro, silicon carbide inogona kukamurwa muzvikamu zviviri: α SiC uye β SiC. Semiconductor yechizvarwa chechitatu inomiririrwa nesilicon carbide (SIC) ine frequency yakakwira, kushanda zvakanaka, simba rakawanda, kuramba kumanikidzwa kwakakwira, kuramba kupisa kwakakwira uye kuramba kwakasimba kwemwaranzi. Yakakodzera zvinodiwa zvikuru zvekuchengetedza simba nekuderedza kusvibiswa, kugadzira kwakangwara uye kuchengetedzwa kwemashoko. Inotsigira hunyanzvi hwakazvimiririra nekuvandudzwa uye kushandurwa kwekutaurirana kwenharembozha kwechizvarwa chitsva, mota dzesimba idzva, zvitima zvechitima zvinomhanya zvakanyanya, internet yesimba nedzimwe indasitiri. Zvinhu zvepakati zvakavandudzwa uye zvikamu zvemagetsi zvave chinhu chinonyanya kutariswa netekinoroji yepasi rose yesemiconductor nemakwikwi eindasitiri. Muna 2020, maitiro ehupfumi hwepasi rose nekutengeserana ari munguva yekuvandudzwa, uye nharaunda yemukati neyekunze yehupfumi hweChina yakaoma uye yakaoma, asi indasitiri yesemiconductor yechizvarwa chechitatu pasi rose iri kukura zvichienderana nemafambiro. Zvinofanira kuzivikanwa kuti indasitiri yesilicon carbide yapinda padanho idzva rekuvandudza.

Silicon carbidechikumbiro

Kushandiswa kweSilicon carbide muindasitiri yesemiconductor silicon carbide semiconductor indasitiri cheni inonyanya kusanganisira silicon carbide high purity powder, single crystal substrate, epitaxial, power device, module packaging uye terminal application, nezvimwewo.

1. Substrate yekristaro imwe chete ndiyo inotsigira, zvinhu zvinofambisa mhepo uye substrate yekukura kwe epitaxial ye semiconductor. Parizvino, nzira dzekukura dzeSiC single crystal dzinosanganisira physical gas transfer (PVT), liquid phase (LPE), high temperature chemical vapor deposition (htcvd) nezvimwewo. 2. epitaxial silicon carbide epitaxial sheet inoreva kukura kwe single crystal film (epitaxial layer) ine zvinodiwa uye kurongeka kwakafanana ne substrate. Mukushanda kwayo, zvishandiso zve semiconductor zve wide band gap zvinenge zvese zviri pa epitaxial layer, uye silicon carbide chips pachadzo dzinongoshandiswa se substrates, kusanganisira Gan epitaxial layers.

3. kuchena kwakanyanyaSiCUpfu chinhu chakakosha pakukura kwesilicon carbide single crystal nePVT method. Kuchena kwechigadzirwa chayo kunokanganisa zvakananga kukura kweSiC single crystal uye hunhu hwemagetsi.

4. Chishandiso chemagetsi chakagadzirwa nesilicon carbide, ine hunhu hwekudzivirira kupisa kwakanyanya, mafrequency akawanda uye kushanda zvakanaka. Zvichienderana nechimiro chekushanda kwechishandiso,SiCZvishandiso zvemagetsi zvinonyanya kusanganisira ma power diode nema power switch chubhu.

5. Mukushandiswa kwe semiconductor yechizvarwa chechitatu, zvakanakira zvekushandiswa kwekupedzisira ndezvekuti zvinogona kuwedzera semiconductor yeGaN. Nekuda kwezvakanakira zvekushanda zvakanyanya, hunhu hwekupisa hushoma uye huremu hwemidziyo yeSiC, kudiwa kweindasitiri iri pasi kuri kuramba kuchiwedzera, izvo zvine maitiro ekutsiva michina yeSiO2. Mamiriro aripo pari zvino ekuvandudzwa kwemusika wesilicon carbide ari kuramba achikura. Silicon carbide inotungamira kushandiswa kwemusika wekuvandudza semiconductor yechizvarwa chechitatu. Zvigadzirwa zve semiconductor zvechizvarwa chechitatu zvave zvichipinzwa nekukurumidza, minda yekushandisa iri kuramba ichikura, uye musika uri kukura nekukurumidza nekuvandudzwa kwemagetsi emota, kutaurirana kwe5g, simba rekuchaja nekukurumidza uye kushandiswa kwemauto. .