Iminota itatu yo kwiga kuri silicon carbide (SIC)

Intangiriro yaKarubide ya silikoni

Karubide ya silikoni (SIC) ifite ubucucike bwa 3.2g/cm3. Karubide ya silikoni karemano ni gake cyane kandi ahanini ikorwa hakoreshejwe uburyo bw'ubukorano. Dukurikije uburyo butandukanye bwo gushyira mu byiciro imiterere ya kristu, karubide ya silikoni ishobora kugabanywamo ibice bibiri: α SiC na β SiC. Semiconductor yo mu gisekuru cya gatatu ihagarariwe na karubide ya silikoni (SIC) ifite frequency yo hejuru, imikorere myiza, imbaraga nyinshi, ubwiyongere bw'umuvuduko, ubwiyongere bw'ubushyuhe n'ubwiyongere bukomeye bw'imirasire. Ikwiriye ibikenewe by'ingenzi mu kubungabunga ingufu no kugabanya imyuka ihumanya, gukora ibintu mu buryo bw'ubwenge no kurinda amakuru. Ni ugushyigikira udushya twigenga n'iterambere no guhindura itumanaho rishya rya telefoni zigendanwa, imodoka nshya z'ingufu, gari ya moshi yihuta, ingufu Internet n'izindi nganda Ibikoresho by'ingenzi byavuguruwe n'ibice by'ikoranabuhanga byabaye intego y'ikoranabuhanga mpuzamahanga rya semiconductor n'irushanwa ry'inganda. Mu 2020, imiterere y'ubukungu n'ubucuruzi ku isi iri mu gihe cyo kuvugurura, kandi ibidukikije by'imbere n'inyuma by'ubukungu bw'Ubushinwa biragoye kandi bikomeye, ariko inganda za semiconductor zo mu gisekuru cya gatatu ku isi zirimo gukura ugereranyije n'icyerekezo. Bigomba kumenyekana ko inganda za karubide ya silikoni zinjiye mu cyiciro gishya cy'iterambere.

Karubide ya silikoniubusabe

Ikoreshwa rya karubide ya silicon mu nganda za semiconductor, uruhererekane rw'inganda za karubide ya silicon rugizwe ahanini n'ifu ya karubide ya silicon ifite ubuziranenge bwinshi, substrate imwe ya kristale, epitaxial, igikoresho cy'amashanyarazi, ipaki ya module na terminal, nibindi.

1. Substrate imwe ya kristale ni ibikoresho bishyigikira, ibikoresho biyobora n'substrate yo gukura ya epitaxial ya semiconductor. Kuri ubu, uburyo bwo gukura bwa SiC single crystal burimo guhererekanya gaze ifatika (PVT), liquid phase (LPE), exposure high chemical vapor deposition (htcvd) n'ibindi. 2. epitaxial silicon carbide epitaxial sheet yerekeza ku gukura kwa crystal film imwe (epitaxial layer) ifite ibisabwa bimwe na bimwe n'icyerekezo kimwe n'icya substrate. Mu buryo bufatika, ibikoresho bya semiconductor bifite icyuho kinini hafi ya byose biri kuri epitaxial layer, kandi silicon carbide chips ubwazo zikoreshwa gusa nk'icya substrate, harimo na Gan epitaxial layers.

3. isuku yo hejuruSiCIfu ni ibikoresho fatizo bifasha gukura kwa silicon carbide single crystal hakoreshejwe uburyo bwa PVT. Ubuziranenge bw'ibicuruzwa byayo bugira ingaruka zitaziguye ku bwiza bw'imikurire n'imiterere y'amashanyarazi ya SiC single crystal.

4. Igikoresho cy'amashanyarazi gikozwe muri karubide ya silikoni, ifite imiterere yo kudashyuha cyane, inshuro nyinshi no gukora neza cyane. Dukurikije imiterere y'imikorere y'igikoresho,SiCIbikoresho by'amashanyarazi ahanini birimo diode z'amashanyarazi n'imiyoboro y'amashanyarazi.

5. Mu ikoreshwa rya semiconductor yo mu gisekuru cya gatatu, ibyiza byo gukoreshwa nyuma ni uko bishobora kuzuza semiconductor ya GaN. Bitewe n'inyungu zo gukoresha neza cyane, ubushobozi buke bwo gushyushya no koroshya ibikoresho bya SiC, icyifuzo cy'inganda zo mu gikoresho gikomeje kwiyongera, gifite icyerekezo cyo gusimbuza ibikoresho bya SiO2. Imiterere y'iterambere ry'isoko rya silicon carbide ikomeje gutera imbere. Silicon carbide iyoboye ikoreshwa ry'isoko rya semiconductor yo mu gisekuru cya gatatu. Ibicuruzwa bya semiconductor byo mu gisekuru cya gatatu byinjijwemo vuba, imirima y'ikoreshwa irimo kwaguka buri gihe, kandi isoko ririmo gukura vuba hamwe n'iterambere ry'ibikoresho by'ikoranabuhanga by'imodoka, itumanaho rya 5g, umuriro wihuta wo gusharija no gukoreshwa mu gisirikare.