Selelekela saSilicone Carbide
Silicon carbide (SIC) e na le boima ba 3.2g/cm3. Carbide ea tlhaho ea silicon ha e fumanehe haholo 'me e hlahisoa haholo-holo ka mokhoa oa maiketsetso. Ho ea ka lihlopha tse fapaneng tsa sebopeho sa kristale, silicon carbide e ka aroloa ka mekhahlelo e 'meli: α SiC le β SiC. Semiconductor ea moloko oa boraro e emeloang ke silicon carbide (SIC) e na le maqhubu a phahameng, bokhoni bo phahameng, matla a phahameng, khanyetso e phahameng, khanyetso ea mocheso o phahameng le khanyetso e matla ea mahlaseli. E loketse litlhoko tse kholo tsa maano tsa paballo ea matla le phokotso ea mosi, tlhahiso e bohlale le ts'ireletso ea tlhahisoleseling. Ke ho tšehetsa boqapi bo ikemetseng le nts'etsopele le phetoho ea puisano ea mohala ea moloko o mocha, likoloi tse ncha tsa matla, literene tsa terene tse lebelo le phahameng, eneji Inthanete le liindasteri tse ling. Lisebelisoa tsa mantlha tse ntlafalitsoeng le likarolo tsa elektroniki li fetohile sepheo sa theknoloji ea semiconductor ea lefats'e le tlholisano ea indasteri. Ka 2020, mokhoa oa moruo oa lefats'e le khoebo o nakong ea ntlafatso, 'me tikoloho ea ka hare le ea kantle ea moruo oa Chaena e rarahane ebile e tebile, empa indasteri ea semiconductor ea moloko oa boraro lefatšeng e ntse e hola khahlanong le mokhoa ona. Ho hlokahala hore ho hlokomeloe hore indasteri ea silicon carbide e kene mohatong o mocha oa nts'etsopele.
Tšebeliso ea silicon carbide indastering ea semiconductor ketane ea indasteri ea semiconductor ea silicon carbide e kenyelletsa haholo-holo phofo ea silicon carbide e hloekileng haholo, substrate e le 'ngoe ea kristale, epitaxial, sesebelisoa sa motlakase, sephutheloana sa mojule le ts'ebeliso ea terminal, jj.
1. substrate e le 'ngoe ea kristale ke thepa ea tšehetso, thepa e tsamaisang motlakase le substrate ea kholo ea epitaxial ea semiconductor. Hona joale, mekhoa ea kholo ea kristale e le 'ngoe ea SiC e kenyelletsa phetiso ea khase ea 'mele (PVT), phase ea metsi (LPE), ho kenngoa ha mouoane oa lik'hemik'hale mochesong o phahameng (htcvd) jj. 2. epitaxial silicon carbide epitaxial sheet e bua ka kholo ea filimi e le 'ngoe ea kristale (lera la epitaxial) ka litlhoko tse itseng le tataiso e tšoanang le ea substrate. Tšebelisong e sebetsang, lisebelisoa tsa semiconductor tsa lekhalo le leholo la sehlopha se seholo li batla li le holim'a lera la epitaxial, 'me li-chips tsa silicon carbide ka botsona li sebelisoa feela e le substrate, ho kenyeletsoa le mekhahlelo ea Gan epitaxial.
3. bohloeki bo phahamengSiCPhofo ke thepa e tala bakeng sa kholo ea kristale e le 'ngoe ea silicon carbide ka mokhoa oa PVT. Bohloeki ba sehlahisoa sa eona bo ama ka ho toba boleng ba kholo le thepa ea motlakase ea kristale e le 'ngoe ea SiC.
4. Sesebelisoa sa motlakase se entsoe ka silicon carbide, e nang le litšobotsi tsa ho hanyetsa mocheso o phahameng, maqhubu a phahameng le bokhoni bo phahameng. Ho ea ka sebopeho sa ts'ebetso ea sesebelisoa,SiCLisebelisoa tsa motlakase li kenyelletsa haholo-holo li-diode tsa motlakase le liphaephe tsa switch ea motlakase.
5. ts'ebelisong ea semiconductor ea moloko oa boraro, melemo ea ts'ebeliso ea ho qetela ke hore e ka tlatsa semiconductor ea GaN. Ka lebaka la melemo ea bokhoni bo phahameng ba phetoho, litšobotsi tse tlase tsa ho futhumatsa le bobebe ba lisebelisoa tsa SiC, tlhoko ea indasteri e theohelang e ntse e eketseha, e nang le mokhoa oa ho nkela lisebelisoa tsa SiO2 sebaka. Boemo ba hajoale ba nts'etsopele ea 'maraka oa silicon carbide bo ntse bo tsoela pele ho hola. Silicon carbide e etella pele ts'ebeliso ea 'maraka oa nts'etsopele ea semiconductor ea moloko oa boraro. Lihlahisoa tsa semiconductor tsa moloko oa boraro li kentsoe ka potlako, masimo a ts'ebeliso a ntse a hola khafetsa, 'me' maraka o ntse o hola ka potlako ka nts'etsopele ea lisebelisoa tsa elektroniki tsa likoloi, puisano ea 5g, phepelo ea motlakase o potlakileng le ts'ebeliso ea sesole. .
Nako ea poso: Hlakubele-16-2021