Ma muli o ke kumumanaʻo o "ka maikaʻi, nā lawelawe, ka hana a me ka ulu ʻana", ua loaʻa iā mākou nā hilinaʻi a me nā hoʻomaikaʻi mai ka mea kūʻai kūloko a me ka honua holoʻokoʻa no ka IOS Certificate China 99.5%Pahuhopu keramika SicʻO ka Silicon Carbide Sputtering Target no ka uhi ʻana, ʻO kā mākou pahuhopu nui ka hāʻawi ʻana i kā mākou mea kūʻai aku ma ka honua holoʻokoʻa me ka maikaʻi maikaʻi, ke kumu kūʻai hoʻokūkū, ka lawe ʻoluʻolu a me nā lawelawe maikaʻi loa.
Ma muli o ke kumumanaʻo o "ka maikaʻi, nā lawelawe, ka hana a me ka ulu ʻana", ua loaʻa iā mākou nā hilinaʻi a me nā hoʻomaikaʻi mai ka mea kūʻai kūloko a me ka honua holoʻokoʻa noPahuhopu Sputtering Silicon Carbide Kina, Pahuhopu keramika Sic, I kēia manawa, loaʻa iā mākou kahi ʻōnaehana kaohi maikaʻi a piha hoʻi, e hōʻoiaʻiʻo ana e hiki i kēlā me kēia huahana ke hoʻokō i nā koi maikaʻi o nā mea kūʻai aku. Eia kekahi, ua nānā pono ʻia kā mākou mau mea a pau ma mua o ka hoʻouna ʻana.
Nā hui kalapona / kalapona(ma hope aku nei i kapa ʻia ʻo "C / C a i ʻole CFC) he ʻano mea hui i hoʻokumu ʻia ma ke kalapona a hoʻoikaika ʻia e ke kalapona fiber a me kāna huahana (carbon fiber preform). Loaʻa iā ia ka inertia o ke kalapona a me ka ikaika kiʻekiʻe o ke kalapona fiber. Loaʻa iā ia nā waiwai mechanical maikaʻi, ke kūpaʻa wela, ke kūpaʻa corrosion, ka damping friction a me nā ʻano conductivity thermal a me ka uila.
CVD-SiCʻO ka uhi ʻana he mau ʻano o ke ʻano like, ka mea paʻa, ke kūpaʻa wela kiʻekiʻe, ke kūpaʻa ʻokikene, ka maʻemaʻe kiʻekiʻe, ke kūpaʻa waikawa a me ka alkali a me ka reagent organik, me nā waiwai kino a me nā kemika paʻa.
Ke hoʻohālikelike ʻia me nā mea graphite maʻemaʻe kiʻekiʻe, hoʻomaka ka graphite e oxidize ma 400C, kahi e nalowale ai ka pauka ma muli o ka oxidation, e hopena ana i ka haumia o ke kaiapuni i nā mea peripheral a me nā keʻena vacuum, a hoʻonui i nā haumia o ke kaiapuni maʻemaʻe kiʻekiʻe.
Eia nō naʻe, hiki i ka uhi ʻana o SiC ke mālama i ke kūpaʻa kino a me ka kemika ma 1600 degere, Hoʻohana nui ʻia ia i ka ʻoihana hou, ʻoi aku hoʻi i ka ʻoihana semiconductor.
Hāʻawi kā mākou hui i nā lawelawe hana uhi SiC ma ke ʻano CVD ma luna o ka ʻili o ka graphite, nā keramika a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā e loaʻa ana ke kalapona a me ka silicon ke hana i ka mahana kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe, nā molekala i waiho ʻia ma luna o ka ʻili o nā mea i uhi ʻia, e hana ana i ka papa pale SIC. Hoʻopaʻa paʻa ʻia ka SIC i hoʻokumu ʻia i ke kumu graphite, e hāʻawi ana i ke kumu graphite i nā waiwai kūikawā, no laila e hana ana i ka ʻili o ka graphite i paʻa, ʻaʻohe Porosity, kū'ē i ke ana wela kiʻekiʻe, kū'ē i ka corrosion a me ke kū'ē i ka oxidation.
Nā hiʻohiʻona nui:
1. Ke kūpaʻa ʻana i ka oxidation wela kiʻekiʻe:
He maikaʻi loa nō ke kūpaʻa ʻana i ka oxidation ke kiʻekiʻe ka mahana i 1600 C.
2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka waiho ʻana o ka mahu kemika ma lalo o ke kūlana chlorination wela kiʻekiʻe.
3. Ke kūpaʻa ʻana i ka ʻino: paʻakikī kiʻekiʻe, ʻili paʻa, nā ʻāpana maikaʻi.
4. Ke kūpaʻa ʻana i ka palaho: waikawa, alkali, paʻakai a me nā reagents organik.
Nā kikoʻī nui o nā uhi CVD-SIC:
| SiC-CVD | ||
| Ka nui o ka paʻa | (g/cc)
| 3.21 |
| Ikaika kūlou | (Mpa)
| 470 |
| Hoʻonui wela | (10-6/K) | 4
|
| Ka hoʻokele wela | (W/mK) | 300
|
