Sibambelele kwingcamango ethi "umgangatho, iinkonzo, ukusebenza kunye nokukhula", sifumene iitrasti kunye neendumiso ezivela kubathengi basekhaya nakwihlabathi liphela beSitifiketi se-IOS saseTshayina 99.5%Ithagethi yeCeramic yeSicIthagethi yokutshiza iSilicon Carbide yokuGcoba, Iinjongo zethu eziphambili kukubonelela abathengi bethu kwihlabathi liphela ngomgangatho olungileyo, amaxabiso akhuphisanayo, ukuhanjiswa okwanelisayo kunye neenkonzo ezigqwesileyo.
Sibambelele kwingcamango ethi “umgangatho, iinkonzo, ukusebenza kunye nokukhula”, sifumene iitrasti kunye neendumiso ezivela kubathengi basekhaya nakwihlabathi liphela.Ithagethi yokutshiza yeSilicon Carbide yaseTshayina, Ithagethi yeCeramic yeSic, Ngoku sinenkqubo yokulawula umgangatho engqongqo nepheleleyo, eqinisekisa ukuba imveliso nganye inokuhlangabezana neemfuno zomgangatho zabathengi. Ngaphandle koko, zonke izinto zethu zihlolwe ngokungqongqo ngaphambi kokuba zithunyelwe.
Ii-carbon / ii-carbon composite(emva koku kuthiwa “C / C okanye CFC”) luhlobo lwezinto ezidityanisiweyo ezisekelwe kwikhabhoni kwaye ziqiniswe yi-carbon fiber kunye neemveliso zayo (i-carbon fiber preform). Inamandla ekhabhoni kunye namandla aphezulu e-carbon fiber. Ineempawu ezilungileyo zoomatshini, ukumelana nobushushu, ukumelana nokugqwala, ukuxinana kunye neempawu zokuqhuba ubushushu kunye nombane.
I-CVD-SiCUkwaleka kuneempawu zesakhiwo esifanayo, izinto ezincinci, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ubunyulu obuphezulu, ukumelana ne-asidi kunye ne-alkali kunye ne-reagent yendalo, eneempawu zomzimba nezizinzileyo.
Xa kuthelekiswa nezinto zegrafiti ezicocekileyo kakhulu, igrafiti iqala ukunyibilika kwi-400C, nto leyo eya kubangela ukulahleka komgubo ngenxa yokunyibilika, nto leyo eya kubangela ungcoliseko lokusingqongileyo kwizixhobo ezingaphandle kunye namagumbi okufunxa, kwaye yonyusa ukungcola kwendawo ecocekileyo kakhulu.
Nangona kunjalo, i-SiC coating inokugcina uzinzo lomzimba kunye neekhemikhali kwi-1600 degrees, Isetyenziswa kakhulu kushishino lwanamhlanje, ngakumbi kushishino lwe-semiconductor.
Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma iSiC ngendlela yeCVD kumphezulu wegrafiti, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulethe ikhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zithole iimolekyuli zeSiC ezicocekileyo kakhulu, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenze umaleko okhuselayo we-SIC. I-SIC eyenziweyo ibotshelelwe ngokuqinileyo kwisiseko segrafiti, inika isiseko segrafiti iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu wegrafiti ube mncinci, ungabi naPorosity, uxhathiso oluphezulu lobushushu, uxhathiso lokugqwala kunye noxhathiso lwe-oxidation.
Iimpawu eziphambili:
1. Ukumelana ne-oxidation yobushushu obuphezulu:
Ukumelana ne-oxidation kusengcono kakhulu xa amaqondo obushushu ephezulu ukuya kwi-1600 C.
2. Ubunyulu obuphezulu: benziwa yi-chemical vapor deposition phantsi kwemeko ye-chlorination yobushushu obuphezulu.
3. Ukumelana nokukhukuliseka: ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.
4. Ukumelana nokugqwala: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.
Iinkcukacha eziphambili zeengubo zeCVD-SIC:
| I-SiC-CVD | ||
| Uxinano | (g/cc)
| 3.21 |
| Amandla okugobeka | (iMpa)
| 470 |
| Ukwandiswa kobushushu | (10-6/K) | 4
|
| Ukuqhuba kobushushu | (W/mK) | 300
|
