Ka ho khomarela khopolo-taba ea "boleng, lits'ebeletso, ts'ebetso le kholo", re amohetse litšepo le lithoriso ho tsoa ho moreki oa lehae le oa lefats'e ka bophara oa Setifikeiti sa IOS Chaena 99.5%Sepheo sa Ceramic sa SicSepheo sa ho Koahela ka Silicon Carbide, Lipakane tsa rona tse ka sehloohong ke ho fa bareki ba rona lefats'eng ka bophara boleng bo botle, theko e hlōlisanang, phano e khotsofatsang le lits'ebeletso tse ntle haholo.
Ka ho khomarela khopolo-taba ea "boleng, lits'ebeletso, ts'ebetso le kholo", re amohetse litšepo le lithoriso ho tsoa ho bareki ba lehae le ba lefats'e ka bophara bakeng saChina Silicon Carbide Sputtering Sepheo, Sepheo sa Ceramic sa Sic, Jwale re na le sistimi e tiileng le e felletseng ya taolo ya boleng, e netefatsang hore sehlahiswa se seng le se seng se ka fihlela ditlhoko tsa boleng ba bareki. Ntle le moo, dintho tsohle tsa rona di hlahlobilwe ka hloko pele di romelwa.
Metswako ea khabone / khabone(e tla bitsoa "C / C kapa CFC”) ke mofuta oa thepa e kopaneng e thehiloeng khaboneng 'me e matlafatsoa ke faeba ea khabone le lihlahisoa tsa eona (preform ea faeba ea khabone). E na le inertia ea khabone le matla a phahameng a faeba ea khabone. E na le thepa e ntle ea mechini, ho hanyetsa mocheso, ho hanyetsa mafome, ho damping ha khohlano le litšobotsi tsa ho tsamaisa mocheso le motlakase.
CVD-SiCHo roala ho na le litšobotsi tsa sebopeho se ts'oanang, thepa e nyane, ho hanyetsa mocheso o phahameng, ho hanyetsa oxidation, bohloeki bo phahameng, ho hanyetsa asiti le alkali le reagent ea manyolo, e nang le thepa e tsitsitseng ea 'mele le ea lik'hemik'hale.
Ha ho bapisoa le thepa ea graphite e hloekileng haholo, graphite e qala ho oxidation ho 400C, e leng se tla baka tahlehelo ea phofo ka lebaka la oxidation, e leng se fellang ka tšilafalo ea tikoloho ho lisebelisoa tsa kantle le likamore tsa vacuum, le ho eketsa litšila tsa tikoloho e hloekileng haholo.
Leha ho le jwalo, ho kwahela SiC ho ka boloka botsitso ba mmele le ba dikhemikhale ho di-degree tse 1600, E sebediswa haholo indastering ya sejwalejwale, haholoholo indastering ya semiconductor.
Khamphani ea rona e fana ka lits'ebeletso tsa ts'ebetso ea ho koahela SiC ka mokhoa oa CVD holim'a graphite, li-ceramics le lisebelisoa tse ling, e le hore likhase tse khethehileng tse nang le carbon le silicon li arabele mochesong o phahameng ho fumana limolek'hule tsa SiC tse hloekileng haholo, limolek'hule tse behiloeng holim'a thepa e koahetsoeng, li theha lera le sireletsang la SIC. SIC e entsoeng e hokahane ka thata le motheo oa graphite, e fa motheo oa graphite thepa e ikhethang, kahoo e etsa hore bokaholimo ba graphite bo be bo kopaneng, bo se nang Porosity, bo hane mocheso o phahameng, bo hane ho ts'enyeha le ho haneloa ke oxidation.
Likarolo tse ka sehloohong:
1. Khanyetso ea ho chesoa ha oxidation mochesong o phahameng:
Khanyetso ea oxidation e ntse e le ntle haholo ha mocheso o le holimo ho fihla ho 1600 C.
2. Bohloeki bo phahameng: bo entsoe ka ho kenngoa ha mouoane ka lik'hemik'hale tlas'a boemo ba chlorination bo phahameng ba mocheso.
3. Khanyetso ea khoholeho ea mobu: ho thatafala ho hoholo, bokaholimo bo kopaneng, likaroloana tse tšesaane.
4. Ho hanyetsa mafome: asiti, alkali, letsoai le li-reagent tsa tlhaho.
Litlhaloso tse ka Sehloohong tsa Liaparo tsa CVD-SIC:
| SiC-CVD | ||
| Botenya | (g/cc)
| 3.21 |
| Matla a ho tenyetseha | (Mpa)
| 470 |
| Katoloso ea mocheso | (10-6/K) | 4
|
| Ho khanna ha mocheso | (Boemo ba leholimo/mK) | 300
|
