Annagoo u hoggaansamayna aragtida "tayada, adeegyada, waxqabadka iyo kobaca", waxaan ka helnay kalsooni iyo ammaan macaamiisha gudaha iyo kuwa caalamiga ah Shahaadada IOS ee Shiinaha 99.5%Bartilmaameedka Dhoobada ee SicBartilmaameedka Silicon Carbide Sputtering ee loogu talagalay dahaarka, Ujeeddooyinkayaga ugu muhiimsan waa inaan macaamiisheenna adduunka oo dhan siino tayo wanaagsan, qiimo tartan ah, gaarsiinta qanacsan iyo adeegyo aad u fiican.
Annagoo u hoggaansamayna aragtida "tayada, adeegyada, waxqabadka iyo kobaca", waxaan ka helnay kalsooni iyo ammaan macaamiisha gudaha iyo kuwa caalamiga ah.Bartilmaameedka Sputtering-ka Silikoon ee Shiinaha, Bartilmaameedka Dhoobada ee SicHadda waxaan leenahay nidaam xakamayn tayo oo adag oo dhammaystiran, kaas oo hubinaya in badeecad kastaa ay buuxin karto shuruudaha tayada ee macaamiisha. Intaa waxaa dheer, dhammaan alaabtayada si adag ayaa loo baaray ka hor inta aan la soo rarin.
Isku-darka Kaarboon / Kaarboon(halkan waxaa loogu yeeraa ""C/C ama CFC") waa nooc ka mid ah walxaha isku dhafan oo ku salaysan kaarboon waxaana xoojiyay fiilada kaarboon iyo alaabteeda (preform-ka fiilada kaarboon). Waxay leedahay labadaba firfircoonida kaarboonka iyo xoogga sare ee fiilada kaarboonka. Waxay leedahay sifooyin farsamo oo wanaagsan, iska caabinta kulaylka, iska caabinta daxalka, yaraynta is jiidjiidka iyo astaamaha gudbinta kulaylka iyo korontada.
CVD-SiCdahaarka wuxuu leeyahay astaamo qaab-dhismeed isku mid ah, walxo is haysta, iska caabin heerkul sare, iska caabin oksaydh, daahirnimo sare, iska caabin aashito & alkali iyo reagent organic, oo leh sifooyin jireed iyo kiimiko oo deggan.
Marka la barbardhigo walxaha graphite-ka ee saafiga sare leh, graphite-ku wuxuu bilaabaa inuu oksaydheeyo 400C, taasoo sababi doonta luminta budada oksaydheynta awgeed, taasoo keenta wasakhowga deegaanka ee aaladaha durugsan iyo qolalka faakiyuumka, waxayna kordhisaa wasakhda deegaanka ee saafiga sare leh.
Si kastaba ha ahaatee, dahaarka SiC wuxuu ilaalin karaa xasilloonida jireed iyo kiimikada 1600 digrii. Waxaa si weyn loogu isticmaalaa warshadaha casriga ah, gaar ahaan warshadaha semiconductor-ka.
Shirkaddayadu waxay bixisaa adeegyada habka dahaarka SiC iyadoo la adeegsanayo habka CVD ee dusha sare ee garaafitka, dhoobada iyo agabyada kale, si gaasaska gaarka ah ee ka kooban kaarboon iyo silikoon ay uga falceliyaan heerkulka sare si ay u helaan molecules-ka SiC ee saafiga ah, molecules-ka lagu shubo dusha sare ee agabka dahaarka leh, iyagoo sameeya lakab ilaalin SIC ah. SIC-ga la sameeyay si adag ayuu ugu xiran yahay saldhigga garaafitka, isagoo siinaya sifooyin gaar ah saldhigga garaafitka, sidaas darteedna wuxuu ka dhigayaa dusha sare ee garaafitka mid is haysta, aan lahayn porosity, iska caabin heerkul sare, iska caabin daxaleed iyo iska caabin oksaydh.
Astaamaha ugu muhiimsan:
1. Iska caabinta oksaydhka heerkulka sare:
Iska caabbinta oksaydhku wali aad bay u fiican tahay marka heerkulku uu gaaro 1600 C.
2. Nadiifnimo sare: waxaa lagu sameeyaa kaydka uumiga kiimikada iyadoo xaalad koloriin heerkul sare leh.
3. Iska caabbinta nabaad-guurka: adkaansho sare, dusha sare oo is haysta, walxo yaryar.
4. Iska caabbinta daxalka: aashitada, alkali, milixda iyo walxaha dabiiciga ah.
Tilmaamaha ugu Muhiimsan ee Dahaadhka CVD-SIC:
| SiC-CVD | ||
| Cufnaanta | (g/cc)
| 3.21 |
| Xoogga dabacsanaanta | (Mpa)
| 470 |
| Ballaarinta kulaylka | (10-6/K) | 4
|
| Gudbinta kulaylka | (W/mK) | 300
|
