Silandela inkolelo-mbono ethi “ikhwalithi, izinsizakalo, ukusebenza kanye nokukhula”, sithole ama-trust kanye nezincomo ezivela kumthengi wasekhaya nowasemhlabeni wonke weSitifiketi se-IOS eShayina 99.5%I-Sic Ceramic TargetInhloso Yokugcotshwa Kwe-Silicon Carbide, Izinhloso zethu eziyinhloko ukuhlinzeka amakhasimende ethu emhlabeni wonke ngekhwalithi enhle, intengo encintisanayo, ukulethwa okwanelisayo kanye nezinsizakalo ezinhle kakhulu.
Sinamathela emcabangweni "wekhwalithi, izinsizakalo, ukusebenza kanye nokukhula", sithole ama-trust kanye nezincomo ezivela kubathengi basekhaya nasemhlabeni jikelele be-I-China Silicon Carbide Sputtering Target, I-Sic Ceramic Target, Manje sinesistimu yokulawula ikhwalithi eqinile nephelele, eqinisekisa ukuthi umkhiqizo ngamunye ungahlangabezana nezidingo zekhwalithi zamakhasimende. Ngaphandle kwalokho, zonke izinto zethu zihlolwe ngokuqinile ngaphambi kokuthunyelwa.
Izinhlanganisela zekhabhoni/khabhoni(okuzobizwa ngokuthi “lapha"C/C noma i-CFC") uhlobo lwezinto ezihlanganisiwe ezisekelwe ku-carbon futhi ziqiniswa yi-carbon fiber kanye nemikhiqizo yazo (i-carbon fiber preform). Inamandla okuqina kwe-carbon kanye namandla aphezulu e-carbon fiber. Inezici ezinhle zomshini, ukumelana nokushisa, ukumelana nokugqwala, ukucindezelwa kokungqubuzana kanye nezici zokuqhuba ukushisa kanye nogesi.
I-CVD-SiCUkumboza kunezici zesakhiwo esifanayo, izinto ezihlanganisiwe, ukumelana nokushisa okuphezulu, ukumelana nokushiswa kwe-oxidation, ubumsulwa obuphezulu, ukumelana ne-asidi ne-alkali kanye ne-reagent ephilayo, enezakhiwo zomzimba nezimakhemikhali ezizinzile.
Uma kuqhathaniswa nezinto ze-graphite ezihlanzekile kakhulu, i-graphite iqala uku-oxidation ku-400C, okuzobangela ukulahlekelwa yimpuphu ngenxa yoku-oxidation, okuzoholela ekungcolisweni kwemvelo kumadivayisi angaphandle kanye namakamelo okuhlanza, futhi kwandise ukungcola kwendawo ehlanzekile kakhulu.
Kodwa-ke, ukugqoka kwe-SiC kungagcina ukuzinza ngokomzimba nangokwekhemikhali kuma-degrees angu-1600, Kusetshenziswa kabanzi embonini yanamuhla, ikakhulukazi embonini ye-semiconductor.
Inkampani yethu inikeza izinsizakalo zenqubo yokumboza i-SiC ngendlela ye-CVD ebusweni be-graphite, izinto zobumba nezinye izinto, ukuze amagesi akhethekile aqukethe ikhabhoni ne-silicon asabela ekushiseni okuphezulu ukuze athole ama-molecule e-SiC ahlanzekile kakhulu, ama-molecule abekwe ebusweni bezinto ezimboziwe, akha ungqimba oluvikelayo lwe-SIC. I-SIC eyakhiwe iboshwe ngokuqinile esisekelweni se-graphite, inikeza isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite bube buncane, bungabi ne-Porosity, bumelana nokushisa okuphezulu, bumelana nokugqwala kanye nokumelana ne-oxidation.
Izici eziyinhloko:
1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana nokushiswa kwe-oxidation kusese kuhle kakhulu lapho izinga lokushisa liphezulu lifinyelela ku-1600 C.
2. Ubumsulwa obuphezulu: okwenziwe ngokufaka umusi wamakhemikhali ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.
Imininingwane Eyinhloko Yezimbozo ze-CVD-SIC:
| I-SiC-CVD | ||
| Ubuningi | (g/cc)
| 3.21 |
| Amandla okugobeka | (i-Mpa)
| 470 |
| Ukwanda kokushisa | (10-6/K) | 4
|
| Ukuqhuba kwe-thermal | (W/mK) | 300
|
