Ha e le hantle ke tsela e ntle ea ho ntlafatsa lihlahisoa le litharollo tsa rona le ho lokisa. Sepheo sa rona e lokela ho ba ho hlahisa lihlahisoa le litharollo tse iqapetsoeng ho bareki re sebelisa boiphihlelo bo botle ba ho sebetsa bakeng sa OEM/ODM GaN-Baseddepitaxial e rekisoang ka bongata ho Sic Substrates 4′′, Re tsepamisa maikutlo ho haheng lets'oao la rona le ho kopantsoe le tlhahiso e mengata ea boiphihlelo le lisebelisoa tsa maemo a holimo. Thepa ea rona eo u lokelang ho ba le eona.
Ha e le hantle ke tsela e ntle ea ho ntlafatsa lihlahisoa le litharollo tsa rona le tokiso. Sepheo sa rona e lokela ho ba ho hlahisa lihlahisoa le litharollo tse iqapetsoeng ho bareki re sebelisa boiphihlelo bo botle ba ho sebetsa bakeng saLi-substrate tsa China GaN le Filimi ea GaN, Ka mefuta e mengata, boleng bo botle, litheko tse utloahalang le meralo e metle, thepa ea rona e sebelisoa haholo botleng le indastering e meng. Lihlahisoa le litharollo tsa rona li ananeloa haholo ebile lia tšeptjoa ke basebelisi 'me li ka fihlela litlhoko tsa moruo le tsa sechaba tse fetohang khafetsa.

SiC coating graphite MOCVD Wafer carriers

Li-susceptor tsohle tsa rona li entsoe ka graphite e matla e nang le isostatic e phahameng. Rua molemo ho hloekeng ho hoholo ha li-graphite tsa rona - tse etselitsoeng haholo-holo lits'ebetso tse thata joalo ka epitaxy, ho holisa kristale, ho kenngoa ha ion le ho etching ka plasma, hammoho le tlhahiso ea li-chip tsa LED.

Tlhaloso ea Sehlahisoa
Ho koahela SiC ha karolo e ka tlas'a Graphite bakeng sa lits'ebetso tsa Semiconductor ho hlahisa karolo e nang le bohloeki bo phahameng le ho hanyetsa sepakapaka se oxidizing.
CVD SiC kapa CVI SiC e sebelisoa ho Graphite ea likarolo tse bonolo kapa tse rarahaneng tsa moralo. Sekoahelo se ka sebelisoa ka botenya bo fapaneng le likarolong tse kholo haholo.

Karolo

Melemo e ikhethang ea li-susceptor tsa rona tsa graphite tse koahetsoeng ke SiC e kenyelletsa bohloeki bo phahameng haholo, ho koahela ka ho tšoana le bophelo bo botle ba ts'ebeletso. Li boetse li na le khanyetso e phahameng ea lik'hemik'hale le litšobotsi tsa botsitso ba mocheso.

Re boloka mamello e haufi haholo ha re sebelisa sekoahelo sa SiC, re sebelisa mochini o nepahetseng haholo ho netefatsa boemo bo ts'oanang ba susceptor. Re boetse re hlahisa thepa e nang le thepa e ntle ea ho hanyetsa motlakase bakeng sa ts'ebeliso lits'ebetsong tse futhumetseng ka mokhoa oa inductive. Likarolo tsohle tse felileng li tla le setifikeiti sa ho latela melao ea bohloeki le ea boholo bo itseng.

Kopo:

Likaroloana:
· Khanyetso e Hlollang ea Thermal Shock
· Khanyetso e Hlollang ea 'Mele ea ho Tšoaroa ke Tšabo
· Khanyetso e Hlollang ea Lik'hemik'hale
· Bohloeki bo Phahameng ka ho Fetisisa
· Ho fumaneha ka Sebopeho se Rarahaneng
· E ka sebelisoa tlas'a Oxidizing AtmosphereMatlotlo a Tloaelehileng a Thepa ea Motheo ea Graphite:

Ha e le hantle ke tsela e ntle ea ho ntlafatsa lihlahisoa le litharollo tsa rona le ho lokisa. Sepheo sa rona e lokela ho ba ho hlahisa lihlahisoa le litharollo tse iqapetsoeng ho bareki re sebelisa boiphihlelo bo botle ba ho sebetsa bakeng sa OEM/ODM GaN-Baseddepitaxial e rekisoang ka bongata ho Sic Substrates 4′′, Re tsepamisa maikutlo ho haheng lets'oao la rona le ho kopantsoe le tlhahiso e mengata ea boiphihlelo le lisebelisoa tsa maemo a holimo. Thepa ea rona eo u lokelang ho ba le eona.
OEM/ODM ea thekiso e ngataLi-substrate tsa China GaN le Filimi ea GaN, Ka mefuta e mengata, boleng bo botle, litheko tse utloahalang le meralo e metle, thepa ea rona e sebelisoa haholo botleng le indastering e meng. Lihlahisoa le litharollo tsa rona li ananeloa haholo ebile lia tšeptjoa ke basebelisi 'me li ka fihlela litlhoko tsa moruo le tsa sechaba tse fetohang khafetsa.