I-Silicon Carbide Coated Graphite Susceptor yokuqopha i-LED

Incazelo emfushane:

I-silicon carbide susceptor yokugoba kwe-LED (ithreyi ye-SiC) iyisengezo esikhethekile sokugoba okujulile kwe-silicon (umshini wokugoba we-ICP). isithwali se-wafer, esaziwa nangokuthi isithwali se-wafer, isithwali se-wafer se-silicon, esaziwa nangokuthi i-pocket wafer. Isetshenziswa kabanzi kwi-semiconductor CVD kanye ne-vacuum sputtering.

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

I-susceptor eboshwe nge-silicon carbide iyi-a ukhiyeingxenye esetshenziswa ezinqubweni ezahlukene zokukhiqiza ze-semiconductor.Sisebenzisa ubuchwepheshe bethu obunelungelo lobunikazi ukwenza i-susceptor eboshwe nge-silicon carbide ngeubumsulwa obuphezulu kakhulu,kuhleukugqokaukufanakanye nokuphila kwenkonzo okuhle kakhulu, kanye neukumelana okuphezulu kwamakhemikhali kanye nezakhiwo zokuqina kokushisa.

I-VET Energy iyi- iumenzi wangempela wemikhiqizo ye-graphite neye-silicon carbide eyenziwe ngokwezifiso ene-CVD coating,ingahlinzekaokuhlukahlukeneizingxenye ezenzelwe wena zemboni ye-semiconductor kanye ne-photovoltaic. OIthimba lakho lobuchwepheshe livela ezikhungweni zocwaningo zasekhaya eziphezulu, linganikeza izixazululo zezinto ezibonakalayo zobungcweti.kwakho.

Sihlala sithuthukisa izinqubo ezithuthukisiwe ukuze sinikeze izinto ezithuthukisiwe kakhulu,futhibasebenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kwengubo kanye ne-substrate kuqine futhi kunganciphisi ukuhlukana.

Fizici zemikhiqizo yethu:

1. Ukumelana nokushisa okuphezulu kwe-oxidation kuze kufike ku-1700℃.
2. Ubumsulwa obukhulu kanyeukufana kokushisa
3. Ukumelana okuhle kakhulu nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.
4. Ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.
5. Impilo yesevisi ende futhi ihlala isikhathi eside

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo zomzimba ze-CVD SiCukugqoka
性质 / Impahla	典型数值 / Inani Elijwayelekile
晶体结构 / Isakhiwo sekristalu	Isigaba se-β se-FCC多晶，主要為（111）取向
密度 / Ubuningi	3.21 g/cm³
硬度 / Ubulukhuni	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Usayizi Wokusanhlamvu	2 ~ 10μm
纯度 / Ukuhlanzeka Kwamakhemikhali	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / Izinga Lokushisa Elingaphansi	2700℃
抗弯强度 / Amandla Okugobeka	I-415 MPa RT amaphuzu angu-4
杨氏模量 / I-Modulus yentsha	I-430 Gpa 4pt bend, 1300℃
导热系数 / I-ThermalUkuqhuba	300W·m^-1·K^-1
热膨胀系数 / Ukwanda Kokushisa (i-CTE)	4.5×10^-6K^-1