Izakhiwo ze-silicon carbide ephinde yasetshenziswa
I-silicon carbide ephinde yasetshenziswa (R-SiC) iyinto esebenza kahle kakhulu enobulukhuni obulandela idayimane kuphela, eyakhiwa ekushiseni okuphezulu okungaphezu kuka-2000℃. Igcina izakhiwo eziningi ezinhle kakhulu ze-SiC, njengamandla okushisa aphezulu, ukumelana nokugqwala okunamandla, ukumelana okuhle kwe-oxidation, ukumelana okuhle kokushaqeka kokushisa nokunye.
● Izakhiwo ezinhle kakhulu zemishini. I-silicon carbide ephinde yasetshenziswa inamandla nokuqina okuphezulu kune-carbon fiber, ukumelana okukhulu komthelela, ingadlala ukusebenza okuhle ezindaweni ezinokushisa okukhulu, ingadlala ukusebenza okungcono kokuphikisana ezimweni ezahlukahlukene. Ngaphezu kwalokho, futhi inokuguquguquka okuhle futhi ayonakaliswa kalula ngokwelula nokugoba, okuthuthukisa kakhulu ukusebenza kwayo.
● Ukumelana nokugqwala okuphezulu. I-silicon carbide ephinde yasetshenziswa inokumelana nokugqwala okuphezulu ezinhlobonhlobo zemidiya, ingavimbela ukuguguleka kwezinhlobonhlobo zemidiya egqwalisayo, ingagcina izakhiwo zayo zemishini isikhathi eside, inokunamathela okuqinile, ukuze ibe nokuphila isikhathi eside kwenkonzo. Ngaphezu kwalokho, futhi inokuqina okuhle kokushisa, ingazivumelanisa nobubanzi obuthile bezinguquko zokushisa, ithuthukise umphumela wayo wokusetshenziswa.
● Ukusinta akunciphi. Ngenxa yokuthi inqubo yokusinta ayinciphi, akukho ukucindezeleka okusele okuzobangela ukuguquka noma ukuqhekeka komkhiqizo, futhi izingxenye ezinezimo eziyinkimbinkimbi kanye nokunemba okuphezulu zingalungiswa.
| 重结晶碳化硅物理特性 Izakhiwo zomzimba ze-Recrystallised Silicon Carbide | |
| 性质 / Impahla | 典型数值 / Inani Elijwayelekile |
| 使用温度/ Izinga lokushisa lokusebenza (°C) | 1600°C (ene-oxygen), 1700°C (indawo enciphisayo) |
| I-SiC含量/ Okuqukethwe kwe-SiC | > 99.96% |
| 自由Si含量/ Okuqukethwe kwe-Si kwamahhala | < 0.1% |
| 体积密度/Ubuningi obukhulu | 2.60-2.70 g/cm3 |
| 气孔率/ Ukuvuleka okubonakalayo | < 16% |
| 抗压强度/ Amandla okucindezela | > 600I-MPa |
| 常温抗弯强度/Amandla okugoba abandayo | 80-90 MPa (20°C) |
| 高温抗弯强度Amandla okugoba ashisayo | 90-100 MPa (1400°C) |
| 热膨胀系数/ Ukwandiswa kokushisa @1500°C | 4.70 10-6/°C |
| 导热系数/Ukushisa kwe-conductivity @1200°C | 23Ububanzi/m•K |
| 杨氏模量/ Imodulus enwebekayo | 240 GPa |
| 抗热震性/ Ukumelana nokushaqeka kokushisa | Kuhle kakhulu |
I-VET Energy iyi- iumenzi wangempela wemikhiqizo ye-graphite neye-silicon carbide eyenziwe ngokwezifiso ene-CVD coating,ingahlinzekaokuhlukahlukeneizingxenye ezenzelwe wena zemboni ye-semiconductor kanye ne-photovoltaic. OIthimba lakho lobuchwepheshe livela ezikhungweni zocwaningo zasekhaya eziphezulu, linganikeza izixazululo zezinto ezibonakalayo zobungcweti.kwakho.
Sihlala sithuthukisa izinqubo ezithuthukisiwe ukuze sinikeze izinto ezithuthukisiwe kakhulu,futhibasebenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kwengubo kanye ne-substrate kuqine futhi kunganciphisi ukuhlukana.
| I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo zomzimba ze-CVD SiCukugqoka | |
| 性质 / Impahla | 典型数值 / Inani Elijwayelekile |
| 晶体结构 / Isakhiwo sekristalu | Isigaba se-β se-FCC多晶,主要為(111)取向 |
| 密度 / Ubuningi | 3.21 g/cm³ |
| 硬度 / Ubulukhuni | 2500 维氏硬度 (500g umthwalo) |
| 晶粒大小 / Usayizi Wokusanhlamvu | 2 ~ 10μm |
| 纯度 / Ukuhlanzeka Kwamakhemikhali | 99.99995% |
| 热容 / Amandla Okushisa | 640 J·kg-1·K-1 |
| 升华温度 / Izinga Lokushisa Elingaphansi | 2700℃ |
| 抗弯强度 / Amandla Okugobeka | I-415 MPa RT amaphuzu angu-4 |
| 杨氏模量 / I-Modulus yentsha | I-430 Gpa 4pt bend, 1300℃ |
| 导热系数 / I-ThermalUkuqhuba | 300W·m-1·K-1 |
| 热膨胀系数 / Ukwanda Kokushisa (i-CTE) | 4.5×10-6K-1 |
Siyakwamukela ngemfudumalo ukuthi uvakashele ifektri yethu, ake sixoxe kabanzi!
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