Umkhiqizi waseShayina i-SiC Coated Graphite MOCVD Epitaxy Susceptor

Isithombe Esivelele Somkhiqizi waseShayina i-SiC Coated Graphite MOCVD Epitaxy Susceptor

Incazelo emfushane:

Ubumsulwa < 5ppm
‣ Ukufana okuhle kwe-doping
‣ Ukuminyana okuphezulu kanye nokunamathela
‣ Ukumelana okuhle nokugqwala kanye nekhabhoni

‣ Ukwenza ngokwezifiso kobungcweti
‣ Isikhathi esifushane sokulethwa
‣ Ukunikezwa okuzinzile
‣ Ukulawulwa kwekhwalithi kanye nokuthuthuka okuqhubekayo

I-Epitaxy ye-GaN ku-Sapphire(I-RGB/I-Mini/I-Micro LED);
I-Epitaxy ye-GaN ku-Si Substrate(i-UVC);
I-Epitaxy ye-GaN ku-Si Substrate(Idivayisi kagesi);
I-Epitaxy ye-Si ku-Si Substrate(Isekethe ehlanganisiwe);
I-Epitaxy ye-SiC ku-SiC Substrate(I-substrate);
I-Epitaxy ye-InP ku-InP

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

I-MOCVD Susceptor esezingeni eliphezulu ithenga ku-inthanethi eShayina

I-wafer idinga ukudlula ezinyathelweni eziningana ngaphambi kokuba ilungele ukusetshenziswa kumadivayisi kagesi. Inqubo eyodwa ebalulekile yi-silicon epitaxy, lapho ama-wafer ethwalwa khona kuma-susceptors e-graphite. Izakhiwo kanye nekhwalithi yama-susceptors kunomthelela obalulekile ekhwalithini yengqimba ye-epitaxial ye-wafer.

Ngezigaba zokufakwa kwefilimu encane njenge-epitaxy noma i-MOCVD, i-VET inikeza imishini ye-graphite emsulwa kakhulu esetshenziselwa ukusekela ama-substrate noma "ama-wafers". Embindini wenqubo, le mishini, ama-epitaxy susceptors noma amapulatifomu esathelayithi e-MOCVD, kuqala afakwa endaweni yokufakwa kwefilimu:

● Izinga lokushisa eliphezulu.
● I-vacuum ephezulu.
● Ukusetshenziswa kwezinto ezibangela igesi ezinamandla.
● Akukho ukungcola, ukungabikho kokuxebuka.
● Ukumelana nama-asidi aqinile ngesikhathi sokuhlanza

I-VET Energy ingumkhiqizi wangempela wemikhiqizo ye-graphite ne-silicon carbide eyenziwe ngokwezifiso ene-coating yezimboni ze-semiconductor kanye ne-photovoltaic. Ithimba lethu lobuchwepheshe livela ezikhungweni zocwaningo zasekhaya eziphezulu, lingakunikeza izixazululo zezinto zobungcweti ezengeziwe.

Sihlala sithuthukisa izinqubo ezithuthukisiwe ukuze sinikeze izinto ezithuthukisiwe kakhulu, futhi sisebenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kwesembozo kanye nesisekelo kube kuqinile futhi kungahlukani kakhulu.

Izici zemikhiqizo yethu:

1. Ukumelana nokushisa okuphezulu kwe-oxidation kuze kufike ku-1700℃.
2. Ubumsulwa obuphezulu kanye nokufana okushisayo
3. Ukumelana okuhle kakhulu nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.
4. Ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.
5. Impilo yesevisi ende futhi ihlala isikhathi eside

I-CVD SiC Izakhiwo eziyisisekelo zomzimba ze-CVD SiCukugqoka
Impahla	Inani Elijwayelekile
Isakhiwo sekristalu	Ukuqondiswa kwe-FCC β phase polycrystalline, ikakhulukazi (111)
Ubuningi	3.21 g/cm³
Ubulukhuni	Ubulukhuni be-Vickers obungu-2500 （umthwalo ongu-500g）
I-Grain SiZe	2 ~ 10μm
Ukuhlanzeka Kwamakhemikhali	99.99995%
Amandla Okushisa	640 J·kg^-1·K^-1
Izinga Lokushisa Lokuthuthwa Kwezinto Ezincane	2700℃
Amandla Okugobeka	I-415 MPa RT amaphuzu angu-4
I-Young's Modulus	I-430 Gpa 4pt bend, 1300℃
Ukuqhuba Okushisayo	300W·m^-1·K^-1
Ukwanda Kokushisa (i-CTE)	4.5×10^-6K^-1