China Umkhiqizi SiC Coated Graphite MOCVD Epitaxy Susceptor

Umkhiqizi waseChina we-SiC Coated Graphite MOCVD Epitaxy Susceptor Isithombe Esifakiwe

Incazelo emfushane:

Ubumsulwa <5ppm
‣ Ukufana okuhle kwe-doping
‣ Ukuminyana okuphezulu nokunamathela
‣ I-anti-corrosive enhle kanye nokumelana nekhabhoni

‣ Ukwenza ngokwezifiso kochwepheshe
‣ Isikhathi esincane sokuhola
‣ Ukunikezwa okuzinzile
‣ Ukulawulwa kwekhwalithi nokuthuthukiswa okuqhubekayo

I-Epitaxy ye-GaN ku-Sapphire(RGB/Mini/Micro LED);
I-Epitaxy ye-GaN ku-Si Substrate(UVC);
I-Epitaxy ye-GaN ku-Si Substrate(Idivayisi ye-elekthronikhi);
I-Epitaxy ye-Si ku-Si Substrate(Isekethe ehlanganisiwe);
I-Epitaxy ye-SiC ku-SiC Substrate(I-substrate);
I-Epitaxy ye-InP ku-InP

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ikhwalithi ephezulu ye-MOCVD Susceptor ethenga ku-inthanethi e-China

Iwafa idinga ukudlula ezinyathelweni ezimbalwa ngaphambi kokuba ilungele ukusetshenziswa emishinini kagesi. Inqubo eyodwa ebalulekile i-silicon epitaxy, lapho ama-wafers enziwa khona kuma-graphite susceptors. Izakhiwo kanye nekhwalithi ye-susceptors inomthelela obalulekile kukhwalithi ye-epitaxial layer ye-wafer.

Ngezigaba zokubekwa kwefilimu ezacile njenge-epitaxy noma i-MOCVD, i-VET ihlinzeka ngemishini ye-graphitee ye-ultra-pure esetshenziselwa ukusekela ama-substrates noma "ama-wafers". Emnyombweni wenqubo, le mishini, ama-epitaxy susceptors noma amapulatifomu esathelayithi e-MOCVD, aqala ngaphansi kwemvelo yokubeka:

● Izinga lokushisa eliphezulu.
● I-vacuum ephezulu.
● Ukusetshenziswa kwezandulela zegesi ezinolaka.
● Ukungcola, ukungabi bikho kokuxebuka.
● Ukumelana nama-asidi aqinile ngesikhathi sokuhlanza

I-VET Energy ingumkhiqizi wangempela wemikhiqizo eyenziwe ngokwezifiso ye-graphite ne-silicon carbide ene-semiconductor kanye nemboni ye-photovoltaic. Ithimba lethu lezobuchwepheshe livela ezikhungweni eziphezulu zocwaningo lwasekhaya, lingakunikeza izixazululo zempahla echwepheshile.

Siyaqhubeka nokuthuthukisa izinqubo ezithuthukile ukuze sinikeze izinto ezithuthuke kakhulu, futhi senze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukuhlangana phakathi kokumboza ne-substrate kuqine futhi kungabi lula ukuhlukaniswa.

Izici zemikhiqizo yethu:

1. Ukumelana nokushisa okuphezulu kwe-oxidation kufika ku-1700 ℃.
2. Ukuhlanzeka okuphezulu nokufana okushisayo
3. Ukumelana nokugqwala okuhle kakhulu: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
4. Ukuqina okuphezulu, indawo ehlangene, izinhlayiya ezinhle.
5. Impilo yesevisi ende futhi ihlala isikhathi eside

I-CVD SiC Izakhiwo eziyisisekelo ze-CVD SiCenamathela
Impahla	Inani Elijwayelekile
Isakhiwo Sekristalu	I-FCC β isigaba se-polycrystalline, ikakhulukazi (111) umumo
Ukuminyana	3.21 g/cm³
Ukuqina	2500 Vickers ubulukhuni (500g umthwalo)
Grain SiZe	2 ~ 10μm
I-Chemical Purity	99.99995%
Amandla Okushisa	640 J·kg^-1·K^-1
I-Sublimation Temperature	2700 ℃
Amandla e-Flexural	415 MPa RT 4-iphoyinti
I-Modulus Encane	430 Gpa 4pt ukugoba, 1300℃
I-Thermal Conductivity	300Wm^-1·K^-1
Ukunwetshwa kwe-Thermal(CTE)	4.5×10^-6K^-1