Rufin CVD

Rufin CVD don Ci gaba da Sarrafa Semiconductor

An ƙera shi don yanayin masana'antar semiconductor mai mahimmanci, murfin mu na Chemical Tururi Deposition (CVD) Silicon Carbide (SiC), Tantalum Carbide (TaC), da Pyrolytic Carbon (PyC) suna ba da ingantaccen rashin kuzarin sinadarai, kwanciyar hankali mai zafi, da tsarki mai matuƙar girma (<5 ppm). An ƙera shi don kare graphite mai tsarki da abubuwan yumbu daga iskar oxygen mai ƙarfi, iskar gas mai amsawa, da kuma zagayowar zafi mai yawa, rufin mu na zamani yana rage samar da barbashi kuma yana tsawaita tsawon rayuwar sassan sosai a cikinSilicon/SiC Epitaxy, MOCVD, Plasma Etching, da kuma Monocrystal Growthaikace-aikace.

Tsarkakakken Mafi Girma (< 5 ppm)

ƙarancin ƙazanta na ƙarfe da aka tabbatar da GDMS don hana gurɓatar wafer a cikin mahimman matakai.

Mafi kyawun juriya ga Plasma da Gas

Tsarin lu'ulu'u mai yawa yana kare shi daga halogen plasma (CF₄, NF₃, Cl₂) da iskar gas mai lalata.

Daidaitawar Zafi Mafi Kyau

Tsarin CTE mai tsauri yana kawar da ƙananan fasawa da lalata shafi a ƙarƙashin girgizar zafi mai tsanani.

Nau'in Shafi	Babban Amfanin Fasaha	Babban Aikace-aikacen Tsarin Aiki
Shafi na CVD SiC	Babban ƙarfin zafi, kyakkyawan juriya ga zaizayar plasma	Dry Etch, Si Epitaxy, MOCVD, Crystal Growth
Rufin CVD TaC	Juriyar zafin jiki mai tsanani (>2000°C), shingen tsatsa na H₂/SiH₄	SiC Epitaxy, Ci gaban SiC PVT Guda ɗaya
Rufin PyC	Hatimin iskar gas mai ƙarfi, saman carbon mai santsi sosai	Rufin filin zafi, CZ Monocrystalline Silicon