Ukugqoka kwe-CVD

Izembozo ze-CVD Zokucubungula Okuthuthukisiwe Kwe-Semiconductor

Njengoba zenzelwe izindawo ezibalulekile zokukhiqiza ama-semiconductor, izembozo zethu ze-Chemical Vapor Deposition (CVD) Silicon Carbide (SiC), Tantalum Carbide (TaC), kanye ne-Pyrolytic Carbon (PyC) ziletha ukungangeni kahle kwamakhemikhali, ukuzinza okukhulu kokushisa, kanye nobumsulwa obuphezulu kakhulu (<5 ppm). Zenzelwe ukuvikela i-graphite ehlanzekile kakhulu kanye ne-ceramic substrates kusuka ku-plasma enamandla, amagesi enqubo yokusabela, kanye nokujikeleza okuphezulu kokushisa, izembozo zethu ezithuthukisiwe zinciphisa ukukhiqizwa kwezinhlayiya futhi zandisa kakhulu isikhathi sokuphila kwezingxenye kuI-Silicon/SiC Epitaxy, i-MOCVD, i-Plasma Etching, kanye nokukhula kwe-Monocrystalizinhlelo zokusebenza.

Ukuhlanzeka Okuphezulu Kakhulu (< 5 ppm)

Ukungcola okuphansi kwensimbi okuqinisekiswe yi-GDMS ukuvimbela ukungcoliswa kwe-wafer ezinqubweni ezibalulekile.

Ukumelana Okuphezulu Kwe-Plasma Negesi

Isakhiwo esiqinile sekristalu sivikela i-halogen plasma (CF₄, NF₃, Cl₂) kanye namagesi aqothulayo.

Ukufaniswa Kokushisa Okulungiselelwe

Ukulawulwa okuqinile kwe-CTE kuqeda ukuqhekeka okuncane kanye nokwehlukaniswa kwe-coating ngaphansi kokushaqeka okukhulu kokushisa.

Uhlobo Lokumboza	Inzuzo Eyinhloko Yobuchwepheshe	Isicelo Senqubo Eyinhloko
Ukugqoka kwe-CVD SiC	Ukushisa okuphezulu, ukumelana okuhle kakhulu nokuguguleka kwe-plasma	I-Dry Etch, i-Si Epitaxy, i-MOCVD, i-Crystal Growth
Ukugqoka kwe-CVD TaC	Ukumelana nokushisa okukhulu (>2000°C), isithiyo sokugqwala se-H₂/SiH₄	Ukukhula kwe-SiC Epitaxy, i-Single-Crystal SiC PVT
Isimbozo se-PyC	Ukuvalwa kwegesi okuthambile, ubuso bekhabhoni obubushelelezi kakhulu be-anisotropic	Ukufakwa kwe-thermal field, i-CZ Monocrystalline Silicon