ʻO ka hanauna mua o nā mea semiconductor e hōʻike ʻia e ka silicon kuʻuna (Si) a me ka germanium (Ge), ʻo ia ke kumu no ka hana ʻana i nā kaapuni hoʻohui. Hoʻohana nui ʻia lākou i nā transistors a me nā mea ʻike haʻahaʻa-voltage, haʻahaʻa-alapine, a me ka mana haʻahaʻa. ʻOi aku ma mua o 90% o nā huahana semiconductor i hana ʻia me nā mea i hoʻokumu ʻia i ka silicon;
Hōʻike ʻia nā mea semiconductor hanauna ʻelua e gallium arsenide (GaAs), indium phosphide (InP) a me gallium phosphide (GaP). Ke hoʻohālikelike ʻia me nā mea hana silicon, loaʻa iā lākou nā waiwai optoelectronic alapine kiʻekiʻe a me ka wikiwiki kiʻekiʻe a hoʻohana nui ʻia ma nā kahua o optoelectronics a me microelectronics.
ʻO ke kolu o ka hanauna o nā mea semiconductor e hōʻike ʻia e nā mea hou e like me ka silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), daimana (C), a me ka alumini nitride (AlN).
Karbida silikahe mea kumu koʻikoʻi ia no ka hoʻomohala ʻana o ka ʻoihana semiconductor hanauna ʻekolu. Hiki i nā mea hana mana Silicon carbide ke hoʻokō pono i nā koi kiʻekiʻe, ka miniaturization a me ka māmā o nā ʻōnaehana uila mana me ko lākou kūpaʻa kiʻekiʻe kiʻekiʻe, ke kūpaʻa wela kiʻekiʻe, ka pohō haʻahaʻa a me nā waiwai ʻē aʻe.
Ma muli o kona mau waiwai kino kiʻekiʻe: ke kiʻekiʻe o ka band gap (e pili ana i ke kahua uila haki kiʻekiʻe a me ka nui o ka mana), ke alakaʻi uila kiʻekiʻe, a me ke alakaʻi wela kiʻekiʻe, manaʻo ʻia e lilo ia i mea kumu i hoʻohana nui ʻia no ka hana ʻana i nā ʻāpana semiconductor i ka wā e hiki mai ana. ʻOi loa aku hoʻi i nā kahua o nā kaʻa ikehu hou, ka hana mana photovoltaic, ka transit rail, nā grids akamai a me nā kahua ʻē aʻe, he mau pono maopopo kona.
Ua māhele ʻia ke kaʻina hana SiC i ʻekolu mau ʻanuʻu nui: ka ulu ʻana o ka kristal hoʻokahi SiC, ka ulu ʻana o ka papa epitaxial a me ka hana ʻana i nā hāmeʻa, e pili ana i nā loulou nui ʻehā o ke kaulahao ʻoihana:substrate, epitaxy, nā hāmeʻa a me nā modula.
ʻO ke ʻano hana nui o ka hana ʻana i nā substrates e hoʻohana mua i ke ʻano sublimation mahu kino e hoʻoluliluli i ka pauka i loko o kahi wahi vacuum wela kiʻekiʻe, a ulu i nā kristal silicon carbide ma luna o ka ʻili o ke kristal hua ma o ka kaohi ʻana o kahi kahua mahana. Me ka hoʻohana ʻana i kahi wafer silicon carbide ma ke ʻano he substrate, hoʻohana ʻia ka waiho ʻana o ka mahu kemika e waiho i kahi papa o ka kristal hoʻokahi ma ka wafer e hana i kahi wafer epitaxial. I waena o lākou, hiki ke hana ʻia ka ulu ʻana o kahi papa epitaxial silicon carbide ma kahi substrate silicon carbide conductive i nā mea hana mana, kahi i hoʻohana nui ʻia i nā kaʻa uila, photovoltaics a me nā kahua ʻē aʻe; ulu kahi papa epitaxial gallium nitride ma kahi semi-insulatingsubstrate carbide siliconhiki ke hana hou ʻia i mau mea hana alapine (frequency) lekiō, hoʻohana ʻia i nā kamaʻilio 5G a me nā kahua ʻē aʻe.
I kēia manawa, ʻo nā substrates silicon carbide nā mea pale loea kiʻekiʻe loa i ke kaulahao ʻoihana silicon carbide, a ʻo nā substrates silicon carbide ka mea paʻakikī loa e hana.
ʻAʻole i hoʻoponopono piha ʻia ka pilikia hana o SiC, a ʻo ke ʻano o nā pou kristal maka he paʻa ʻole a aia kahi pilikia hua, kahi e alakaʻi ai i ke kumukūʻai kiʻekiʻe o nā mea SiC. He awelika o 3 mau lā no ka mea silicon e ulu ai i loko o ke koʻokoʻo kristal, akā he pule no ke koʻokoʻo kristal silicon carbide. Hiki i ke koʻokoʻo kristal silicon maʻamau ke ulu i 200cm ka lōʻihi, akā hiki i ke koʻokoʻo kristal silicon carbide ke ulu wale i 2cm ka lōʻihi. Eia kekahi, he mea paʻakikī a palupalu ʻo SiC ponoʻī, a ʻo nā wafers i hana ʻia me ia mea he maʻalahi i ka ʻoki ʻana i ka lihi i ka wā e hoʻohana ai i ka ʻoki wafer mīkini kuʻuna, kahi e hoʻopilikia ai i ka hua a me ka hilinaʻi o ka huahana. He ʻokoʻa loa nā substrates SiC mai nā ingots silicon kuʻuna, a ʻo nā mea āpau mai nā lako, nā kaʻina hana, ka hana ʻana a hiki i ka ʻoki ʻana e pono e hoʻomohala ʻia e lawelawe i ka silicon carbide.
Ua māhele nui ʻia ke kaulahao ʻoihana silicon carbide i ʻehā mau loulou nui: substrate, epitaxy, nā mea hana a me nā noi. ʻO nā mea substrate ke kumu o ke kaulahao ʻoihana, ʻo nā mea epitaxial ke kī i ka hana ʻana i nā mea hana, ʻo nā mea hana ke kumu o ke kaulahao ʻoihana, a ʻo nā noi ke kumu o ka hoʻomohala ʻoihana. Hoʻohana ka ʻoihana upstream i nā mea maka e hana i nā mea substrate ma o nā ʻano sublimation mahu kino a me nā ʻano hana ʻē aʻe, a laila hoʻohana i nā ʻano hoʻokaʻawale mahu kemika a me nā ʻano hana ʻē aʻe e ulu ai nā mea epitaxial. Hoʻohana ka ʻoihana midstream i nā mea upstream e hana i nā mea hana alapine lekiō, nā mea mana a me nā mea hana ʻē aʻe, kahi i hoʻohana hope ʻia i nā kamaʻilio 5G downstream. , nā kaʻa uila, ka transit kaʻaahi, a pēlā aku. I waena o lākou, ʻo ka substrate a me ka epitaxy he 60% o ke kumukūʻai o ke kaulahao ʻoihana a ʻo ia ka waiwai nui o ke kaulahao ʻoihana.
ʻO ke kumu SiC: Hana pinepine ʻia nā kristal SiC me ka hoʻohana ʻana i ke ʻano Lely. Ke neʻe nei nā huahana nui o ka honua mai 4 ʻīniha a i 6 ʻīniha, a ua hoʻomohala ʻia nā huahana substrate conductive 8-ʻīniha. ʻO nā substrates kūloko he 4 ʻīniha ka nui. Ma muli o ka hiki ke hoʻonui ʻia a hoʻololi ʻia nā laina hana wafer silicon 6-ʻīniha e hana i nā mea SiC, e mālama ʻia ka māhele mākeke kiʻekiʻe o nā substrates SiC 6-ʻīniha no ka manawa lōʻihi.
He paʻakikī a paʻakikī hoʻi ke hana ʻana i ke kaʻina hana substrate silicon carbide. ʻO ka substrate Silicon carbide kahi mea semiconductor hui pū ʻia me nā mea ʻelua: kalapona a me silicon. I kēia manawa, hoʻohana nui ka ʻoihana i ka pauka kalapona maʻemaʻe kiʻekiʻe a me ka pauka silicon maʻemaʻe kiʻekiʻe ma ke ʻano he mea maka e hana ai i ka pauka silicon carbide. Ma lalo o kahi kahua mahana kūikawā, hoʻohana ʻia ke ʻano hoʻoili mahu kino makua (PVT method) e ulu i ka silicon carbide o nā nui like ʻole i loko o ka umu ulu kristal. Hoʻoponopono hope ʻia ka ingot kristal, ʻoki ʻia, wili ʻia, poli ʻia, hoʻomaʻemaʻe ʻia a me nā kaʻina hana he nui e hana i kahi substrate silicon carbide.
Ka manawa hoʻouna: Mei-22-2024