An wakilci ƙarni na farko na kayan semiconductor ta hanyar silicon na gargajiya (Si) da germanium (Ge), waɗanda su ne tushen kera da'irori masu haɗawa. Ana amfani da su sosai a cikin na'urori masu auna ƙarfin lantarki, ƙarancin mitoci, da ƙarancin wutar lantarki. Fiye da kashi 90% na samfuran semiconductor an yi su ne da kayan da aka yi da silicon;
Kayan semiconductor na ƙarni na biyu suna wakiltar gallium arsenide (GaAs), indium phosphide (InP) da gallium phosphide (GaP). Idan aka kwatanta da na'urori masu tushen silicon, suna da halayen optoelectronic masu yawan mita da sauri kuma ana amfani da su sosai a fannin optoelectronics da microelectronics.
An wakilta ƙarni na uku na kayan semiconductor ta hanyar kayan da suka fito kamar silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), lu'u-lu'u (C), da aluminum nitride (AlN).
Silicon carbidemuhimmin abu ne na asali don haɓaka masana'antar semiconductor na ƙarni na uku. Na'urorin wutar lantarki na silicon carbide na iya biyan buƙatun ingantaccen aiki, ƙarancin aiki da sauƙi na tsarin lantarki mai ƙarfi tare da kyakkyawan juriyar ƙarfin lantarki mai ƙarfi, juriyar zafin jiki mai yawa, ƙarancin asara da sauran kaddarorinsu.
Saboda kyawun halayensa na zahiri: babban tazara mai ƙarfi (wanda ya yi daidai da babban filin lantarki mai lalacewa da yawan wutar lantarki), babban ikon wutar lantarki, da kuma ƙarfin wutar lantarki mai ƙarfi, ana sa ran zai zama kayan aiki mafi amfani don yin guntuwar semiconductor a nan gaba. Musamman a fannin sabbin motocin makamashi, samar da wutar lantarki ta hanyar amfani da hasken rana, jigilar jiragen ƙasa, grid mai wayo da sauran fannoni, yana da fa'idodi bayyanannu.
Tsarin samar da SiC ya kasu kashi uku: Girman lu'ulu'u guda ɗaya na SiC, haɓakar Layer epitaxial da kera na'urori, waɗanda suka dace da manyan hanyoyin haɗin sarkar masana'antu guda huɗu:substrate, epitaxi, na'urori da kayayyaki.
Babban hanyar ƙera substrates da farko tana amfani da hanyar sublimation na tururi na zahiri don sublimating foda a cikin yanayin injin mai zafi mai zafi, da kuma haɓaka lu'ulu'u na silicon carbide a saman lu'ulu'u iri ta hanyar sarrafa filin zafin jiki. Ta amfani da wafer na silicon carbide a matsayin substrates, ana amfani da ajiyar tururi na sinadarai don sanya Layer na lu'ulu'u ɗaya a kan wafer don samar da wafer na epitaxial. Daga cikinsu, haɓaka Layer na silicon carbide epitaxial akan substrate na silicon carbide mai sarrafawa za a iya sanya shi na'urorin wutar lantarki, waɗanda galibi ana amfani da su a cikin motocin lantarki, photovoltaics da sauran filayen; haɓaka Layer na gallium nitride epitaxial akan rabin-rufi.silicon carbide substrateza a iya ƙara yin amfani da na'urorin rediyo, waɗanda ake amfani da su a cikin sadarwa ta 5G da sauran fannoni.
A yanzu, abubuwan da aka yi da silicon carbide suna da mafi girman shingen fasaha a cikin sarkar masana'antar silicon carbide, kuma abubuwan da aka yi da silicon carbide sune mafi wahalar samarwa.
Ba a warware matsalar samar da SiC gaba ɗaya ba, kuma ingancin ginshiƙan lu'ulu'u na kayan abu ba shi da tabbas kuma akwai matsalar yawan amfanin ƙasa, wanda ke haifar da tsadar na'urorin SiC. Yana ɗaukar matsakaicin kwanaki 3 ne kawai kafin kayan silicon su girma su zama sandunan lu'ulu'u, amma yana ɗaukar mako guda kafin sandunan lu'ulu'u na silicon carbide. Sanda na lu'ulu'u na silicon gabaɗaya zai iya girma tsawon cm 200, amma sandar lu'ulu'u ta silicon carbide na iya girma tsawon cm 2 kawai. Bugu da ƙari, SiC da kanta abu ne mai tauri da karyewa, kuma wafers da aka yi da shi suna da saurin yanke gefuna lokacin amfani da yanke wafer na gargajiya na injina, wanda ke shafar yawan amfanin samfura da amincinsu. Substrates na SiC sun bambanta sosai da ingots na silicon na gargajiya, kuma komai daga kayan aiki, tsari, sarrafawa zuwa yankewa yana buƙatar haɓaka don sarrafa silicon carbide.
Sarkar masana'antar silicon carbide galibi an raba ta zuwa manyan hanyoyin haɗi guda huɗu: substrate, epitaxy, na'urori da aikace-aikace. Kayan substrate sune tushen sarkar masana'antu, kayan epitaxial sune mabuɗin ƙera na'urori, na'urori sune tushen sarkar masana'antu, kuma aikace-aikace sune tushen ci gaban masana'antu. Masana'antar sama tana amfani da kayan ƙasa don yin kayan substrate ta hanyar hanyoyin sublimation na tururi na zahiri da sauran hanyoyi, sannan kuma tana amfani da hanyoyin adana tururi na sinadarai da sauran hanyoyi don haɓaka kayan epitaxial. Masana'antar tsakiya tana amfani da kayan sama don yin na'urorin mitar rediyo, na'urorin wutar lantarki da sauran na'urori, waɗanda a ƙarshe ake amfani da su a cikin hanyoyin sadarwa na 5G na ƙasa, motocin lantarki, jigilar jirgin ƙasa, da sauransu. Daga cikinsu, substrate da epitaxy suna da kashi 60% na farashin sarkar masana'antu kuma sune babban darajar sarkar masana'antu.
SiC substrate: Yawanci ana ƙera lu'ulu'u na SiC ta amfani da hanyar Lely. Kayayyakin duniya na yau da kullun suna canzawa daga inci 4 zuwa inci 6, kuma an ƙirƙiri samfuran substrate masu inci 8 masu aiki. Substrate na cikin gida galibi inci 4 ne. Tunda ana iya haɓaka layukan samar da wafer silicon mai inci 6 da ake da su don samar da na'urorin SiC, babban kaso na substrate SiC mai inci 6 za a kiyaye shi na dogon lokaci.
Tsarin sinadarin silicon carbide yana da sarkakiya kuma yana da wahalar samarwa. Silicon carbide wani abu ne mai hade da sinadarin semiconductor guda ɗaya wanda ya ƙunshi abubuwa biyu: carbon da silicon. A halin yanzu, masana'antar tana amfani da foda mai ƙarfi da foda mai ƙarfi da foda mai ƙarfi na silicon a matsayin kayan aiki don haɗa foda mai ƙarfi na silicon carbide. A ƙarƙashin wani filin zafin jiki na musamman, ana amfani da hanyar watsa tururi ta jiki mai girma (hanyar PVT) don haɓaka silicon carbide mai girma dabam-dabam a cikin tanderu mai girma na kristal. A ƙarshe ana sarrafa ingot ɗin kristal, yanke shi, niƙa shi, goge shi, tsaftacewa da sauran hanyoyi da yawa don samar da silicon carbide substrate.
Lokacin Saƙo: Mayu-22-2024