Isizukulwane sokuqala sezinto ze-semiconductor simelelwa yi-silicon yendabuko (i-Si) kanye ne-germanium (i-Ge), okuyizisekelo zokukhiqizwa kwesekethe ehlanganisiwe. Zisetshenziswa kabanzi kuma-transistors nama-detector ane-voltage ephansi, imvamisa ephansi, kanye namandla aphansi. Ngaphezu kwama-90% emikhiqizo ye-semiconductor yenziwe ngezinto ezisekelwe ku-silicon;
Izinto zesizukulwane sesibili ze-semiconductor zimelelwa yi-gallium arsenide (GaAs), i-indium phosphide (InP) kanye ne-gallium phosphide (GaP). Uma kuqhathaniswa namadivayisi asekelwe ku-silicon, anezakhiwo ze-optoelectronic ezivame kakhulu nezisheshayo futhi asetshenziswa kabanzi emikhakheni ye-optoelectronics kanye ne-microelectronics.
Isizukulwane sesithathu sezinto ze-semiconductor simelelwa izinto ezivelayo njenge-silicon carbide (SiC), i-gallium nitride (GaN), i-zinc oxide (ZnO), idayimane (C), kanye ne-aluminium nitride (AlN).
I-silicon carbideiyithuluzi eliyisisekelo elibalulekile ekuthuthukisweni kwemboni ye-semiconductor yesizukulwane sesithathu. Amadivayisi kagesi e-silicon carbide angahlangabezana ngempumelelo nezidingo zokusebenza kahle okuphezulu, ukwenziwa okuncane kanye nokukhanya kwezinhlelo ze-elekthronikhi zamandla ngokumelana kwazo okuhle kakhulu kwe-voltage ephezulu, ukumelana nokushisa okuphezulu, ukulahleka okuphansi kanye nezinye izakhiwo.
Ngenxa yezakhiwo zayo ezisezingeni eliphezulu: igebe lebhendi ephezulu (elihambisana nensimu kagesi ephukile kakhulu kanye nobuningi bamandla aphezulu), ukuhanjiswa kukagesi okuphezulu, kanye nokuhanjiswa kokushisa okuphezulu, kulindeleke ukuthi ibe yinto eyisisekelo esetshenziswa kakhulu ekwenzeni ama-semiconductor chips esikhathini esizayo. Ikakhulukazi emikhakheni yezimoto ezintsha zamandla, ukukhiqizwa kukagesi we-photovoltaic, ezokuthutha ngesitimela, amagridi ahlakaniphile kanye neminye imikhakha, inezinzuzo ezisobala.
Inqubo yokukhiqiza i-SiC ihlukaniswe ngezinyathelo ezintathu ezinkulu: ukukhula kwekristalu eyodwa ye-SiC, ukukhula kwengqimba ye-epitaxial kanye nokukhiqizwa kwamadivayisi, okuhambisana nezixhumanisi ezine ezinkulu zochungechunge lwezimboni:isisekelo, i-epitaxy, amadivayisi namamojula.
Indlela eyinhloko yokukhiqiza ama-substrate isebenzisa kuqala indlela ye-physical vapor sublimation ukuze i-sublimate i-powder endaweni yokushisa okuphezulu, futhi ikhule amakristalu e-silicon carbide ebusweni be-crystal yembewu ngokulawula insimu yokushisa. Kusetshenziswa i-silicon carbide wafer njenge-substrate, ukufakwa kwe-chemical vapor kusetshenziswa ukufaka ungqimba lwekristalu elilodwa ku-wafer ukuze kwakhiwe i-epitaxial wafer. Phakathi kwazo, ukukhulisa ungqimba lwe-silicon carbide epitaxial ku-substrate ye-silicon carbide eqhubayo kungenziwa kube amadivayisi kagesi, asetshenziswa kakhulu ezimotweni zikagesi, kuma-photovoltaics nakwamanye amasimu; ukukhulisa ungqimba lwe-gallium nitride epitaxial ku-semi-insulating.i-substrate ye-silicon carbideingenziwa futhi ibe amadivayisi omsakazo, asetshenziswa kwezokuxhumana ze-5G nakwezinye izinkambu.
Okwamanje, ama-substrate e-silicon carbide anezithiyo zobuchwepheshe eziphakeme kakhulu ochungechungeni lwemboni ye-silicon carbide, kanti ama-substrate e-silicon carbide anzima kakhulu ukuwakhiqiza.
Inkinga yokukhiqiza ye-SiC ayikaxazululwa ngokuphelele, futhi ikhwalithi yezinsika zekristalu zezinto zokusetshenziswa ayizinzile futhi kunenkinga yokukhiqiza, okuholela ezindleko eziphezulu zamadivayisi e-SiC. Kuthatha isilinganiso sezinsuku ezi-3 kuphela ukuthi izinto ze-silicon zikhule zibe yinduku yekristalu, kodwa kuthatha isonto lonke induku yekristalu ye-silicon carbide. Induku yekristalu ye-silicon ejwayelekile ingakhula ibe ngu-200cm ubude, kodwa induku yekristalu ye-silicon carbide ingakhula ibe ngu-2cm ubude kuphela. Ngaphezu kwalokho, i-SiC ngokwayo iyinto eqinile futhi ephuka kalula, futhi ama-wafer enziwe ngayo athambekele ekuqhekekeni komngcele lapho kusetshenziswa i-wafer dicing yendabuko yokusika, okuthinta ukuvunwa komkhiqizo nokuthembeka. Ama-substrate e-SiC ahluke kakhulu kuma-ingots e-silicon yendabuko, futhi konke kusukela emishinini, izinqubo, ukucubungula kuya ekusikeni kudinga ukuthuthukiswa ukuze kuphathwe i-silicon carbide.
Uchungechunge lwemboni ye-silicon carbide luhlukaniswe kakhulu ngezixhumanisi ezine ezinkulu: i-substrate, i-epitaxy, amadivayisi kanye nezinhlelo zokusebenza. Izinto ezingaphansi komhlaba ziyisisekelo sochungechunge lwemboni, izinto ze-epitaxial ziyisihluthulelo sokukhiqizwa kwamadivayisi, amadivayisi ayisisekelo sochungechunge lwemboni, kanti izinhlelo zokusebenza zingamandla aqhuba intuthuko yezimboni. Imboni engenhla isebenzisa izinto zokusetshenziswa ukwenza izinto ezingaphansi komhlaba ngokusebenzisa izindlela zokunciphisa umswakama ngokomzimba kanye nezinye izindlela, bese isebenzisa izindlela zokubeka umusi wamakhemikhali kanye nezinye izindlela zokukhulisa izinto ze-epitaxial. Imboni ephakathi isebenzisa izinto ezingaphansi komhlaba ukwenza amadivayisi emvamisa yomsakazo, amadivayisi kagesi kanye namanye amadivayisi, asetshenziswa ekugcineni ekuxhumaneni kwe-5G okuphansi. , izimoto zikagesi, ezokuthutha ngesitimela, njll. Phakathi kwazo, i-substrate kanye ne-epitaxy zibiza u-60% wezindleko zochungechunge lwemboni futhi yizona zindleko eziyinhloko zochungechunge lwemboni.
I-substrate ye-SiC: Amakristalu e-SiC avame ukukhiqizwa kusetshenziswa indlela ye-Lely. Imikhiqizo emikhulu yamazwe ngamazwe ishintsha kusuka kumasentimitha angu-4 kuya kumasentimitha angu-6, kanti imikhiqizo ye-substrate eqhubayo engamasentimitha angu-8 iye yathuthukiswa. I-substrate yasekhaya ikakhulukazi ingamasentimitha angu-4. Njengoba imigqa yokukhiqiza ye-silicon wafer ekhona engamasentimitha angu-6 ingathuthukiswa futhi iguqulwe ukuze ikhiqize amadivayisi e-SiC, isabelo semakethe esiphezulu se-substrate ye-SiC engamasentimitha angu-6 sizogcinwa isikhathi eside.
Inqubo ye-silicon carbide substrate iyinkimbinkimbi futhi kunzima ukuyikhiqiza. I-Silicon carbide substrate iyinto yekristalu eyodwa eyenziwe nge-semiconductor eyakhiwe ngezinto ezimbili: ikhabhoni ne-silicon. Njengamanje, imboni isebenzisa kakhulu i-high-purity carbon powder kanye ne-high-purity silicon powder njengezinto zokusetshenziswa ukukhiqiza i-silicon carbide powder. Ngaphansi kwensimu yokushisa ekhethekile, indlela yokudlulisa umusi ovuthiwe (indlela ye-PVT) isetshenziselwa ukukhulisa i-silicon carbide yobukhulu obuhlukene esithandweni sokukhulisa i-crystal. I-crystal ingot ekugcineni iyacutshungulwa, isikwe, igaywe, ipholishwe, ihlanzwe kanye nezinye izinqubo eziningi ukukhiqiza i-silicon carbide substrate.
Isikhathi sokuthunyelwe: Meyi-22-2024