Ibikoresho bya semiconductor byo mu cyiciro cya mbere bigaragazwa na silikoni gakondo (Si) na germanium (Ge), ari byo shingiro ry’inganda zikora urusobe rw’amashanyarazi. Bikoreshwa cyane muri transistors na detectors zifite voltage nke, frequency nke, n’ingufu nke. Ibicuruzwa bya semiconductor birenga 90% bikozwe mu bikoresho bishingiye kuri silikoni;
Ibikoresho bya semiconductor byo mu gisekuru cya kabiri bigaragazwa na gallium arsenide (GaAs), indium phosfide (InP) na gallium phosfide (GaP). Ugereranyije n'ibikoresho bishingiye kuri silicon, bifite imiterere ya optoelectronic ikoresha frequency yo hejuru kandi yihuta cyane kandi bikoreshwa cyane mu bijyanye na optoelectronics na microelectronics.
Ibikoresho bya semiconductor byo mu cyiciro cya gatatu bigaragazwa n'ibikoresho bishya nka silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diyama (C), na aluminium nitride (AlN).
Karubide ya silikonini ibikoresho by'ingenzi by'ibanze mu iterambere ry'inganda za semiconductor zo mu gisekuru cya gatatu. Ibikoresho by'amashanyarazi bya silicon carbide bishobora guhaza neza imikorere myiza, miniaturization n'ibisabwa byoroheje bya sisitemu z'amashanyarazi zifite imbaraga nyinshi hamwe n'ubushobozi bwazo bwiza bwo kurwanya voltage nyinshi, kurwanya ubushyuhe bwinshi, gutakaza bike n'ibindi.
Kubera imiterere yayo ihebuje: icyuho kinini cy’umugozi (gihuye n’amashanyarazi menshi yangiritse n’ubucucike bw’ingufu nyinshi), ubushobozi bwo gutwara amashanyarazi bwinshi, n’ubushobozi bwo gutwara ubushyuhe bwinshi, byitezwe ko izaba ibikoresho by’ibanze bikoreshwa cyane mu gukora utumashini duto tw’amashanyarazi mu gihe kizaza. Cyane cyane mu bijyanye n’imodoka nshya zikoresha ingufu, gutanga amashanyarazi ya photovoltaic, inzira za gari ya moshi, imiyoboro y’amashanyarazi n’izindi nzego, ifite ibyiza bifatika.
Uburyo bwo gukora SiC bugabanyijemo intambwe eshatu z'ingenzi: Gukura kwa SiC single crystal, gukura kwa epitaxial layer n'ikorwa ry'ibikoresho, bihuye n'isano enye z'ingenzi z'uruhererekane rw'inganda:ubutaka, epitaksi, ibikoresho na modules.
Uburyo busanzwe bwo gukora substrates bubanza gukoresha uburyo bwo gushyira mu kirere umwuka ushyushye kugira ngo ushyire mu kirere ifu mu kirere gishyushye cyane, kandi utere mu kirere kristu za silicon carbide hejuru y’imbuto za kristu binyuze mu kugenzura umurima w’ubushyuhe. Hakoreshejwe wafer ya silicon carbide nk’umurima, hakoreshwa chemical vapor deposition kugira ngo hashyirwe urwego rwa kristu imwe kuri wafer kugira ngo habeho wafer ya epitaxial. Muri byo, gutera urwego rwa silicon carbide epitaxial ku gice cy’icyuma cya silicon carbide gishobora gukorwamo ibikoresho by’amashanyarazi, bikoreshwa cyane cyane mu modoka zikoresha amashanyarazi, photovoltaics n’ahandi; gutera gallium nitride epitaxial layer ku gice cy’ubushyuhe.substrate ya karubide ya silikoniishobora kandi gukorwamo ibikoresho bya radiyo, bikoreshwa mu itumanaho rya 5G n'ahandi.
Kugeza ubu, substrates za silicon carbide zifite imbogamizi zikomeye mu nganda za silicon carbide, kandi substrates za silicon carbide nizo zigoye cyane gukora.
Imbogamizi y’umusaruro wa SiC ntabwo yakemutse burundu, kandi ubwiza bw’inkingi za kristale z’ibikoresho fatizo ntabwo buhamye kandi hari ikibazo cy’umusaruro, bigatera ikiguzi kinini cy’ibikoresho bya SiC. Bifata iminsi 3 gusa kugira ngo ibikoresho bya silicon bikure bibe inkoni ya kristale, ariko bifata icyumweru kimwe kuri inkoni ya kristale ya silicon. Inkingi rusange ya kristale ya silicon ishobora gukura cm 200, ariko inkoni ya kristale ya silicon carbide ishobora gukura cm 2 gusa. Byongeye kandi, SiC ubwayo ni ibikoresho bikomeye kandi byoroshye kwangirika, kandi wafers zikozwe muri yo zikunze gucika intege iyo zikoresha uburyo bwa gakondo bwo gukata wafer, ibyo bigira ingaruka ku musaruro n’ubwizerwe bw’umusaruro. Substrates za SiC zitandukanye cyane n’ingots za silicon zisanzwe, kandi ibintu byose kuva ku bikoresho, inzira, gutunganya kugeza gukata bigomba gukorwa kugira ngo bikoreshwe na silicon carbide.
Uruhererekane rw'inganda za silicon carbide rugabanyijemo ahanini ibi bikurikira: substrate, epitaxy, ibikoresho n'ikoreshwa. Ibikoresho by'ibanze ni byo shingiro ry'uruhererekane rw'inganda, ibikoresho bya epitaxial ni ingenzi mu gukora ibikoresho, ibikoresho ni byo shingiro ry'uruhererekane rw'inganda, naho ikoreshwa ni ryo shingiro ry'iterambere ry'inganda. Inganda zo hejuru zikoresha ibikoresho fatizo mu gukora ibikoresho by'ibanze binyuze mu buryo bwo gushyira umwuka mu kirere n'ubundi buryo, hanyuma zigakoresha uburyo bwo gushyira umwuka mu binyabutabire n'ubundi buryo bwo guhinga ibikoresho bya epitaxial. Inganda zo hagati zikoresha ibikoresho byo hejuru mu gukora ibikoresho bya radiyo, ibikoresho by'amashanyarazi n'ibindi bikoresho, amaherezo bikoreshwa mu itumanaho rya 5G ryo hepfo, imodoka zikoresha amashanyarazi, inzira za gari ya moshi, nibindi. Muri byo, substrate na epitaxy bigira 60% by'ikiguzi cy'uruhererekane rw'inganda kandi ni byo gaciro nyamukuru k'uruhererekane rw'inganda.
Substrate ya SiC: Ubusanzwe kristu za SiC zikorwa hakoreshejwe uburyo bwa Lely. Ibicuruzwa mpuzamahanga bizwi birimo kuva kuri santimetero 1.5 kugera kuri santimetero 1.5, kandi hamaze gukorwa ibikoresho bya substrate bifite santimetero 1.5. Substrate zo mu rugo ahanini ni santimetero 1.5. Kubera ko imirongo isanzwe ikora silicon wafer ya santimetero 1.5 ishobora kuvugururwa no guhindurwa kugira ngo ikore ibikoresho bya SiC, isoko rikomeye rya substrate za SiC za santimetero 1.5 rizakomeza kubungabungwa igihe kirekire.
Uburyo bwo gukora silicon carbide ni ingenzi kandi biragoye gukora. Silicon carbide substrate ni crystal imwe igizwe n'ibintu bibiri: karuboni na silicon. Kuri ubu, inganda zikoresha cyane cyane ifu ya karuboni yuzuye ubuziranenge n'ifu ya silicon yuzuye ubuziranenge nk'ibikoresho fatizo mu gukora ifu ya karuboni. Mu gihe cy'ubushyuhe bwihariye, uburyo bwo kohereza umwuka mu mubiri bukuze (PVT method) bukoreshwa mu gukura silicon carbide y'ingano zitandukanye mu itanura rikura kristu. Ingot ya kristu amaherezo itunganywa, igacibwa, igasenywa, igasukurwa, igasukurwa n'izindi nzira nyinshi kugira ngo hakorwe substrate ya karuboni.
Igihe cyo kohereza: Gicurasi-22-2024