Isizukulwana sokuqala sezixhobo ze-semiconductor simelwe yi-silicon yendabuko (i-Si) kunye ne-germanium (i-Ge), ezisisiseko sokwenza iisekethe ezidibeneyo. Zisetyenziswa kakhulu kwii-transistors kunye nee-detectors ezine-voltage ephantsi, i-frequency ephantsi, kunye ne-low-power. Ngaphezulu kwe-90% yeemveliso ze-semiconductor zenziwe ngezinto ezisekelwe kwi-silicon;
Izixhobo ze-semiconductor zesizukulwana sesibini zimelwe yi-gallium arsenide (GaAs), i-indium phosphide (InP) kunye ne-gallium phosphide (GaP). Xa kuthelekiswa nezixhobo ezisekelwe kwi-silicon, zineempawu ze-optoelectronic ezisebenza rhoqo kakhulu kwaye zikhawuleza kakhulu kwaye zisetyenziswa kakhulu kwicandelo le-optoelectronics kunye ne-microelectronics.
Isizukulwana sesithathu sezixhobo ze-semiconductor simelwe zizixhobo ezivelayo ezifana ne-silicon carbide (SiC), i-gallium nitride (GaN), i-zinc oxide (ZnO), idayimani (C), kunye ne-aluminium nitride (AlN).
I-silicon carbidesisixhobo esibalulekileyo esisisiseko sophuhliso lweshishini le-semiconductor lesizukulwana sesithathu. Izixhobo zamandla ze-silicon carbide zinokuhlangabezana ngempumelelo nokusebenza kakuhle, ukwenziwa kwezinto ezincinci kunye neemfuno ezilula zeenkqubo ze-elektroniki zamandla ngokumelana kwazo okuphezulu kwe-voltage ephezulu, ukumelana nobushushu obuphezulu, ilahleko ephantsi kunye nezinye iimpawu.
Ngenxa yeempawu zayo ezibonakalayo eziphezulu: isithuba sebhendi ephezulu (esihambelana nentsimi yombane eqhekekileyo kakhulu kunye noxinano lwamandla aphezulu), umbane ophezulu oqhubayo, kunye nobushushu obuphezulu, kulindeleke ukuba ibe yeyona nto isetyenziswa kakhulu ekwenzeni iitships ze-semiconductor kwixesha elizayo. Ingakumbi kwicandelo lezithuthi zamandla amatsha, ukuveliswa kwamandla e-photovoltaic, ukuhanjiswa koololiwe, iigridi ezikrelekrele kunye nezinye iindawo, ineengenelo ezicacileyo.
Inkqubo yokuvelisa iSiC yahlulwe yangamanyathelo amathathu amakhulu: ukukhula kwekristale enye yeSiC, ukukhula komaleko we-epitaxial kunye nokuveliswa kwezixhobo, ezihambelana namakhonkco amane amakhulu ekhonkco lemizi-mveliso:isiseko sezinto ezingaphantsi komhlaba, i-epitaxy, izixhobo kunye neemodyuli.
Indlela ephambili yokwenza ii-substrates kuqala isebenzisa indlela ye-physical vapor sublimation ukuze i-sublimate i-powder kwindawo yobushushu obuphezulu, kwaye ikhulise iikristale ze-silicon carbide kumphezulu we-crystal yembewu ngokulawula intsimi yobushushu. Ukusebenzisa i-silicon carbide wafer njenge-substrate, i-chemical vapor deposition isetyenziselwa ukufaka umaleko we-crystal enye kwi-wafer ukuze kwenziwe i-epitaxial wafer. Phakathi kwazo, ukukhulisa umaleko we-silicon carbide epitaxial kwi-substrate ye-silicon carbide eqhubayo kunokwenziwa izixhobo zamandla, ezisetyenziswa kakhulu kwiimoto zombane, ii-photovoltaics kunye nezinye iindawo; ukukhulisa umaleko we-gallium nitride epitaxial kwi-semi-insulating.isiseko se-silicon carbideingenziwa ngakumbi zibe zizixhobo zerediyo, ezisetyenziswa kunxibelelwano lwe-5G nakwezinye iindawo.
Okwangoku, ii-substrates ze-silicon carbide zinemiqobo yobuchwephesha ephezulu kwikhonkco leshishini le-silicon carbide, kwaye ii-substrates ze-silicon carbide zezona zinzima ukuzenza.
Ingxaki yemveliso yeSiC ayikasonjululwa ngokupheleleyo, kwaye umgangatho weentsika zekristale zezinto eziluhlaza awuzinzanga kwaye kukho ingxaki yesivuno, nto leyo ekhokelela kwixabiso eliphezulu lezixhobo zeSiC. Kuthatha umyinge weentsuku ezi-3 kuphela ukuba izinto zesilicon zikhule zibe yirodi yekristale, kodwa kuthatha iveki ukuba intonga yekristale yesilicon carbide ikhule. Intonga yekristale yesilicon eqhelekileyo inokukhula ibe yi-200cm ubude, kodwa intonga yekristale yesilicon carbide inokukhula ibe yi-2cm ubude kuphela. Ngaphezu koko, iSiC ngokwayo yinto eqinileyo nebuthathaka, kwaye iiwafer ezenziwe ngayo zinobunzima bokuqhekeka xa kusetyenziswa i-wafer dicing yendabuko yokusika, echaphazela isivuno kunye nokuthembeka kwemveliso. Ii-substrates zeSiC zahluke kakhulu kwii-silicon ingots zemveli, kwaye yonke into ukusuka kwizixhobo, iinkqubo, ukucubungula ukuya ekusikeni kufuneka iphuhliswe ukuze iphathe i-silicon carbide.
Ikhonkco leshishini le-silicon carbide lahlulwe ngokubanzi kwiikhonkco ezine eziphambili: i-substrate, i-epitaxy, izixhobo kunye nezicelo. Izinto ze-substrate zisisiseko sekhonkco leshishini, izixhobo ze-epitaxial zibalulekile ekuvelisweni kwezixhobo, izixhobo zingundoqo kwikhonkco leshishini, kwaye izicelo zinamandla okuqhuba uphuhliso lwemizi-mveliso. Ishishini eliphambili lisebenzisa izinto eziluhlaza ukwenza izinto ze-substrate ngeendlela ze-physical vapor sublimation kunye nezinye iindlela, kwaye emva koko lisebenzisa iindlela zokufaka umphunga weekhemikhali kunye nezinye iindlela zokukhulisa izixhobo ze-epitaxial. Ishishini eliphakathi lisebenzisa izixhobo ezisezantsi ukwenza izixhobo zerediyo, izixhobo zamandla kunye nezinye izixhobo, ezisetyenziswa ekugqibeleni kunxibelelwano lwe-5G olusezantsi. , izithuthi zombane, uthutho lukaloliwe, njl. Phakathi kwazo, i-substrate kunye ne-epitaxy zibangela i-60% yeendleko zekhonkco leshishini kwaye zezona xabiso liphambili lekhonkco leshishini.
I-substrate yeSiC: Iikristale zeSiC zihlala zenziwa kusetyenziswa indlela yeLely. Iimveliso eziphambili zamazwe ngamazwe ziyaguquka ukusuka kwi-intshi ezi-4 ukuya kwi-intshi ezi-6, kwaye kuye kwaphuhliswa iimveliso ze-substrate eziqhubayo ze-intshi ezi-8. Ii-substrate zasekhaya ikakhulu zii-intshi ezi-4. Ekubeni imigca yemveliso ye-silicon wafer ekhoyo ye-intshi ezi-6 inokuphuculwa kwaye iguqulwe ukuvelisa izixhobo zeSiC, isabelo esikhulu semarike se-substrate zeSiC ze-intshi ezi-6 siya kugcinwa ixesha elide.
Inkqubo ye-silicon carbide substrate iyinkimbinkimbi kwaye kunzima ukuyivelisa. I-Silicon carbide substrate yinto yekristale enye eyenziwe yi-semiconductor edityanisiweyo eyenziwe ngezinto ezimbini: ikhabhoni kunye ne-silicon. Okwangoku, eli shishini lisebenzisa kakhulu umgubo wekhabhoni ococekileyo kakhulu kunye nomgubo we-silicon ococekileyo kakhulu njengezinto eziluhlaza ukwenza umgubo we-silicon carbide. Phantsi kwentsimi yobushushu obukhethekileyo, indlela yokudluliselwa komphunga oqhelekileyo (indlela ye-PVT) isetyenziselwa ukukhulisa i-silicon carbide yobukhulu obahlukeneyo kwisithando sokukhulisa ikristale. I-crystal ingot ekugqibeleni iyacutshungulwa, isikwe, igutywe, ipholishwe, icocwe kwaye ikhutshwe nezinye iinkqubo ezininzi ukuvelisa i-silicon carbide substrate.
Ixesha leposi: Meyi-22-2024