Chizvarwa chekutanga chezvinhu zve semiconductor chinomiririrwa ne silicon yechinyakare (Si) ne germanium (Ge), izvo zviri hwaro hwekugadzirwa kwe circuit integrated. Zvinoshandiswa zvakanyanya muma transistors nema detectors ane voltage shoma, frequency yakaderera, uye low-power. Zvinopfuura 90% zvezvigadzirwa zve semiconductor zvakagadzirwa nezvinhu zvakagadzirwa ne silicon;
Zvishandiso zve semiconductor zvechizvarwa chechipiri zvinomiririrwa ne gallium arsenide (GaAs), indium phosphide (InP) uye gallium phosphide (GaP). Zvichienzaniswa nezvishandiso zve silicon, zvine hunhu hwe optoelectronic hwepamusoro-soro uye hwepamusoro-soro uye zvinoshandiswa zvakanyanya muminda ye optoelectronics ne microelectronics.
Chizvarwa chechitatu chezvinhu zve semiconductor chinomiririrwa nezvinhu zviri kubuda zvakaita sesilicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond (C), uye aluminium nitride (AlN).
Silicon carbidechinhu chakakosha pakusimudzira indasitiri ye semiconductor yechizvarwa chechitatu. Midziyo yemagetsi yesilicon carbide inogona kusangana nezvinodiwa zvepamusoro-soro, miniaturization uye kureruka kwemasisitimu emagetsi emagetsi nekudzivirira kwavo kwakanyanya kwemagetsi ane simba guru, kudzivirira kupisa kwakanyanya, kurasikirwa kushoma nezvimwe zvinhu.
Nekuda kwehunhu hwayo hwepamusoro hwemuviri: gap rebhandi rakakura (rinoenderana nemagetsi akapwanyika zvakanyanya uye huwandu hwesimba rakawanda), conductivity yemagetsi yakawanda, uye conductivity yekupisa yakakwira, inotarisirwa kuve chinhu chinonyanya kushandiswa pakugadzira machipisi e semiconductor mune ramangwana. Kunyanya muminda yemotokari itsva dzesimba, kugadzira simba re photovoltaic, transit yechitima, magrid akangwara nedzimwe nzvimbo, ine zvakanakira zviri pachena.
Maitiro ekugadzira SiC akakamurwa kuita matanho matatu makuru: kukura kweSiC single crystal, kukura kwe epitaxial layer uye kugadzirwa kwemidziyo, zvinoenderana nematanho mana makuru echeni yeindasitiri:pasita, epitaxy, zvishandiso nemamodule.
Nzira huru yekugadzira substrates inotanga yashandisa nzira ye physical vapor sublimation kuti iite sublimate upfu munzvimbo ine vacuum inopisa zvakanyanya, uye ikure silicon carbide crystals pamusoro pe seed crystal kuburikidza nekudzora tembiricha. Uchishandisa silicon carbide wafer se substrate, chemical vapor deposition inoshandiswa kuisa layer ye single crystal pa wafer kuti igadzire epitaxial wafer. Pakati pavo, kukura silicon carbide epitaxial layer pane conductive silicon carbide substrate kunogona kugadzirwa kuita power devices, iyo inonyanya kushandiswa mumota dzemagetsi, photovoltaics nedzimwe nzvimbo; kukura gallium nitride epitaxial layer pane semi-insulating.silicon carbide substrateinogona kugadzirwazve kuita zvishandiso zvemafrequency eredhiyo, zvinoshandiswa mukutaurirana kwe5G nedzimwe nzvimbo.
Parizvino, silicon carbide substrates dzine zvipingamupinyi zvepamusoro-soro muindasitiri yesilicon carbide, uye silicon carbide substrates ndidzo dzakanyanya kuoma kugadzira.
Dambudziko reSiC harina kugadziriswa zvachose, uye mhando yesimbi dzekristaro dzezvinhu zvisina kugadzirwa haina kugadzikana uye pane dambudziko regoho, izvo zvinotungamira kumutengo wakakwira wemidziyo yeSiC. Zvinongotora avhareji yemazuva matatu kuti zvinhu zvesilicon zvikure kuita kristalo rod, asi zvinotora vhiki imwe chete kuti silicon carbide crystal rod. Silicon crystal rod inogona kukura 200cm kureba, asi silicon carbide crystal rod inogona kukura 2cm chete. Uyezve, SiC pachayo inyaya yakaoma uye inoputsika, uye mawafer akagadzirwa nayo anowanzo pwanyika kana uchishandisa nzira dzechinyakare dzekucheka wafer, izvo zvinokanganisa goho rezvigadzirwa uye kuvimbika. SiC substrates dzakasiyana zvikuru nesilicon ingots dzechinyakare, uye zvese kubva pamidziyo, maitiro, kugadzirisa kusvika pakucheka zvinoda kugadzirwa kuti zvibate silicon carbide.
Cheni yeindasitiri yesilicon carbide yakakamurwa zvikuru kuita zvisungo zvikuru zvina: substrate, epitaxy, zvishandiso uye mashandisirwo. Zvinhu zve substrate ndizvo hwaro hwecheni yeindasitiri, zvinhu zve epitaxial ndizvo kiyi yekugadzira zvishandiso, zvishandiso ndizvo musimboti wecheni yeindasitiri, uye mashandisirwo ndiwo simba rinotungamira kukura kwemaindasitiri. Indasitiri yepamusoro inoshandisa zvinhu zvekugadzira substrate kuburikidza nenzira dze physical vapor sublimation nedzimwe nzira, uye inoshandisa nzira dze chemical vapor deposition nedzimwe nzira dzekurima zvinhu zve epitaxial. Indasitiri yepakati inoshandisa zvinhu zvekumusoro kugadzira zvishandiso zve radio frequency, zvishandiso zvemagetsi nezvimwe zvishandiso, izvo zvinozoshandiswa mu 5G communications , mota dzemagetsi, transit njanji, nezvimwewo. Pakati pazvo, substrate ne epitaxy zvinoumba 60% yemari yecheni yeindasitiri uye ndizvo zvinonyanya kukosha cheni yeindasitiri.
SiC substrate: Makristaro eSiC anowanzogadzirwa achishandisa nzira yeLely. Zvigadzirwa zvepasi rose zviri kuchinja kubva pamainchi 4 kusvika pamainchi 6, uye zvigadzirwa zve substrate zvinofambisa simba zvemainchi 8 zvakagadzirwa. Substrate dzemumba dzinenge dziri mainchi 4 chete. Sezvo mitsetse iripo yekugadzira silicon wafer ye6-inch inogona kuvandudzwa nekushandurwa kuti igadzire zvishandiso zveSiC, musika wepamusoro we6-inch SiC substrates uchagara kwenguva yakareba.
Maitiro e silicon carbide substrate akaoma uye akaoma kugadzira. Silicon carbide substrate imhando ye crystal yakagadzirwa ne compound semiconductor ine zvinhu zviviri: kabhoni ne silicon. Parizvino, indasitiri inonyanya kushandisa high-purity carbon powder ne high-purity silicon powder sezvinhu zvekugadzira silicon carbide powder. Pasi pe special temperature field, mature physical vapor transmission method (PVT method) inoshandiswa kukura silicon carbide yehukuru hwakasiyana mu crystal growth furnace. Iyo crystal ingot inogadziriswa, inochekwa, inokweshwa, inoporishwa, inocheneswa uye dzimwe nzira dzakawanda kugadzira silicon carbide substrate.
Nguva yekutumira: Chivabvu-22-2024