A na-eji silicon ọdịnala (Si) na germanium (Ge) anọchite anya ọgbọ mbụ nke ihe semiconductor, nke bụ ntọala maka imepụta sekit agbakwunyere. A na-ejikarị ha eme ihe na obere voltaji, obere ugboro, na obere transistors na ihe nchọpụta ike. Ihe karịrị 90% nke ngwaahịa semiconductor bụ ihe e ji silicon mee;
Ihe ndị e ji emepụta semiconductor nke ọgbọ nke abụọ bụ gallium arsenide (GaAs), indium phosphide (InP) na gallium phosphide (GaP). Ma e jiri ha tụnyere ngwaọrụ ndị dabere na silicon, ha nwere ihe ndị dị elu na nke dị elu, a na-ejikwa ha eme ihe n'ọtụtụ ebe n'ọhịa optoelectronics na microelectronics.
A na-anọchite anya ọgbọ nke atọ nke ihe ndị na-emepụta semiconductor site na ihe ndị na-apụta dịka silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO), diamond (C), na aluminum nitride (AlN).
Silicon carbidebụ ihe dị mkpa maka mmepe nke ụlọ ọrụ semiconductor ọgbọ nke atọ. Ngwaọrụ ike silicon carbide nwere ike imezu arụmọrụ dị elu, obere mmezi na ihe dị mfe nke sistemụ eletrọniki ike site na iguzogide voltaji dị elu, iguzogide okpomọkụ dị elu, obere mfu na ihe ndị ọzọ.
N'ihi ihe ndị dị elu n'anụ ahụ ya: oghere eriri dị elu (nke kwekọrọ na oke mgbawa nke ọkụ eletrik na oke ike), oke njikwa eletriki, na oke njikwa okpomọkụ, a na-atụ anya na ọ ga-abụ ihe kachasị eji eme ihe maka imepụta ibe semiconductor n'ọdịnihu. Karịsịa n'ọhịa nke ụgbọala ike ọhụrụ, mmepụta ike fotovoltaic, ụgbọ okporo ígwè, grid smart na ubi ndị ọzọ, o nwere uru doro anya.
Usoro mmepụta SiC kewara n'ime usoro atọ dị mkpa: uto kristal otu SiC, uto oyi akwa epitaxial na imepụta ngwaọrụ, nke kwekọrọ na njikọ anọ dị mkpa nke agbụ ụlọ ọrụ mmepụta ihe:ihe mejupụtara, epitaxi, ngwaọrụ na modulu.
Ụzọ kachasị esi emepụta ihe ndị e ji emepụta ihe ndị e ji emepụta ihe na-ebu ụzọ jiri usoro sublimation nke anụ ahụ iji mee ka ntụ ahụ dị n'ime ebe ikuku dị elu, wee too kristal silicon carbide n'elu kristal mkpụrụ site na njikwa nke ubi okpomọkụ. Site na iji wafer silicon carbide dị ka ihe e ji emepụta ihe, a na-eji ihe e ji emepụta ihe ndị ...ihe mkpuchi silicon carbideenwere ike ime ka ọ bụrụ ngwaọrụ redio ugboro ugboro, nke a na-eji na nkwukọrịta 5G na mpaghara ndị ọzọ.
Ugbu a, ihe mkpuchi silicon carbide nwere ihe mgbochi teknụzụ kachasị elu na usoro ụlọ ọrụ silicon carbide, ihe mkpuchi silicon carbide bụkwa ihe kachasị sie ike imepụta.
E dozibeghị nsogbu mmepụta nke SiC kpamkpam, ịdị mma nke ogidi kristal raw anaghịkwa agbanwe agbanwe, enwere nsogbu mmepụta, nke na-ebute ọnụ ahịa dị elu nke ngwaọrụ SiC. Ọ na-ewe naanị ụbọchị atọ ka ihe silicon wee too ghọọ mkpanaka kristal, mana ọ na-ewe otu izu maka mkpanaka kristal silicon carbide. Mkpanaka kristal silicon nkịtị nwere ike itolite 200cm n'ogologo, mana mkpanaka kristal silicon carbide nwere ike itolite naanị 2cm n'ogologo. Ọzọkwa, SiC n'onwe ya bụ ihe siri ike ma gbawaa agbawa, wafers e ji ya mee na-adịkarị mfe ịkpụcha n'akụkụ mgbe a na-eji wafer cutting dicing ọdịnala, nke na-emetụta mmepụta ngwaahịa na ntụkwasị obi. Ihe ndị dị na SiC dị nnọọ iche na ingots silicon ọdịnala, ihe niile site na akụrụngwa, usoro, nhazi ruo na ịkpụ kwesịrị ịmepụta iji jikwaa carbide silicon.
A na-ekewa usoro ụlọ ọrụ silicon carbide n'ime njikọ anọ dị mkpa: substrate, epitaxy, ngwaọrụ na ngwa. Ihe ndị dị n'okpuru ala bụ ntọala nke usoro ụlọ ọrụ, ihe ndị dị n'akụkụ ala bụ isi ihe na-emepụta ngwaọrụ, ngwaọrụ bụ isi ihe dị n'usoro ụlọ ọrụ, ngwa bụkwa ihe na-akpali mmepe ụlọ ọrụ. Ụlọ ọrụ dị n'elu na-eji ihe ndị dị n'elu eme ihe site na usoro sublimation vapor anụ ahụ na ụzọ ndị ọzọ, wee jiri usoro deposition vapor kemịkalụ na ụzọ ndị ọzọ iji zụlite ihe ndị dị n'akụkụ ala. Ụlọ ọrụ dị n'etiti na-eji ihe ndị dị n'elu eme ngwaọrụ redio, ngwaọrụ ike na ngwaọrụ ndị ọzọ, nke a na-ejikarị eme ihe na nkwukọrịta 5G dị n'okpuru ala, ụgbọ ala eletrik, ụgbọ okporo ígwè, wdg. N'ime ha, substrate na epitaxy na-aza 60% nke ọnụ ahịa nke usoro ụlọ ọrụ ma bụrụ isi uru nke usoro ụlọ ọrụ ahụ.
Ihe mkpuchi SiC: A na-ejikarị usoro Lely emepụta kristal SiC. Ngwaahịa ndị a ma ama n'ụwa niile na-agbanwe site na sentimita 4 ruo sentimita 6, emepụtakwala ngwaahịa ihe mkpuchi nke nwere sentimita 8. Ihe mkpuchi n'ime ụlọ bụkarị sentimita 4. Ebe ọ bụ na enwere ike ịkwalite ma gbanwee ahịrị mmepụta wafer silicon nke dị sentimita 6 ka ọ bụrụ ngwaọrụ SiC, a ga-edobe oke ahịa nke ihe mkpuchi SiC nke dị sentimita 6 ruo ogologo oge.
Usoro ihe mkpuchi silicon carbide dị mgbagwoju anya ma sie ike imepụta. Ihe mkpuchi silicon carbide bụ ihe mejupụtara otu kristal semiconductor nke nwere ihe abụọ: carbon na silicon. Ugbu a, ụlọ ọrụ ahụ na-ejikarị ntụ ntụ carbon dị ọcha na ntụ ntụ silicon dị elu dị ka ihe eji emepụta ntụ ntụ silicon carbide. N'okpuru ebe okpomọkụ pụrụ iche, a na-eji usoro nnyefe anwụrụ ọkụ anụ ahụ tozuru oke (usoro PVT) akụpụta silicon carbide nke nha dị iche iche na ọkụ kristal. A na-emecha hazie ingot kristal ahụ, bee ya, gwerie ya, tee ya, hichaa ya, hichaa ya na ọtụtụ usoro ndị ọzọ iji mepụta ihe mkpuchi silicon carbide.
Oge ozi: Mee-22-2024