Ibiranga:
· Ubudahangarwa bwiza cyane n'ubushyuhe
· Ubudahangarwa bwiza cyane bwo guhangana n'ihungabana
· Ubudahangarwa bwiza cyane bw'ibinyabutabire
· Ubuziranenge Bukomeye cyane
· Kuboneka mu buryo bugoye
·Ikoreshwa munsi y'ikirere gitanga ogisijeni
Porogaramu:
Ibiranga ibicuruzwa n'ibyiza byabyo:
1. Ubudahangarwa bw'ubushyuhe bukabije:Ifite ubuziranenge bwo hejuruGutwikiriza SiC, substrate yihanganira ubushyuhe bukabije, bigatuma habaho imikorere ihoraho mu bidukikije birimo gukenera ibikoresho byinshi nko gukora epitaxy no gukora semiconductor.
2. Kuramba cyane:Ibice bya grafiti bitwikiriwe na SiC byagenewe kurwanya ingese n’ubushyuhe bw’ibinyabutabire, byongera igihe cy’ubuzima bw’urusobe rw’ibintu ugereranije n’ibisanzwe bya grafiti.
3. Graphite ifite vitreous coated:Imiterere yihariye ya vitreous yaGutwikiriza SiCbitanga ubukana bwiza bw'ubuso, bigabanya kwangirika no gucikagurika mu gihe cyo gutunganya ubushyuhe bwinshi.
4. Gutwikira SiC yo mu bwoko bwa High Purity:Substrate yacu ituma habaho kwanduzanya guke mu buryo bw’ingufu za semiconductor, bitanga icyizere ku nganda zisaba ubuziranenge bukomeye bw’ibikoresho.
5. Gusaba isoko ryagutse:ItsindaIgikoresho cya grafiti gitwikiriwe na SiCIsoko rikomeje kwiyongera uko icyifuzo cy’ibicuruzwa bikozwe muri SiC mu nganda zikora ibikoresho bya semiconductor cyiyongera, ibi bikaba ari ingenzi mu isoko rya grafiti wafer ndetse n’isoko rya grafiti trays za silicon carbide.
Imiterere isanzwe y'ibikoresho bya grafiti by'ibanze:
| Ubucucike bugaragara: | 1.85 g/cm3 |
| Ubushobozi bwo guhangana n'amashanyarazi: | 11 μΩm |
| Ingufu zo Kongera Uburemere: | 49 MPa (500kgf/cm2) |
| Ubukomere bw'Inkombe: | 58 |
| Ivu: | <5ppm |
| Ubushobozi bwo gutwara ubushyuhe: | 116 W/mK (100 kcal/mhr-℃) |
| CVD SiC薄膜基本物理性能 Imiterere y'ibanze ya CVD SiCgusiga | |
| 性质 / Umutungo | 典型数值 / Agaciro gasanzwe |
| / Imiterere ya Crystal | FCC β icyiciro 多晶，主要为（ 111 ）取向 |
| Ubucucike | 3.21 g/cm³ |
| 硬度 / Gukomera | 2500 维氏硬度（ 500g umutwaro） |
| 晶粒大小 / Ingano SiZe | 2 ~ 10μm |
| 纯度 / Ubuziranenge bwa Shimi | 99.99995% |
| 热容 / Ubushyuhe | 640 J·kg-1·K-1 |
| 升华温度 / Ubushyuhe bwo hejuru | 2700℃ |
| 抗弯强度 / Imbaraga zidasanzwe | 415 MPa RT ifite amanota 4 |
| Mod Modulus | 430 Gpa 4pt bend, 1300℃ |
| 导热系数 / Ubushyuhe bwumuriro | 300W·m-1·K-1 |
| 热膨胀系数 / Kwagura Ubushyuhe (CTE) | 4.5×10-6K-1 |
VET Energy niyo sosiyete nyayo ikora ibikoresho bya grafiti na silicon carbide byihariye hamwe n’ibirahure bitandukanye nka SiC coating, TaC coating, ikirahure cya karuboni, pyrolytic carbon coating, nibindi, ishobora gutanga ibice bitandukanye byihariye ku nganda za semiconductor na photovoltaic.
Itsinda ryacu rya tekiniki rituruka mu bigo bikomeye by’ubushakashatsi mu gihugu, rishobora kuguha ibisubizo by’ibikoresho by’umwuga.
Dukomeza guteza imbere inzira zigezweho kugira ngo dutange ibikoresho bigezweho, kandi twakoze ikoranabuhanga ryihariye rifite uburenganzira bwo gukora patenti, rishobora gutuma isano iri hagati y’igitambaro n’icyuma gifunga ibintu irushaho gukomera kandi ikagira ingaruka nke ku buryo bitavangwa.
Turaguhaye ikaze mu gusura uruganda rwacu, reka tugire ibiganiro birambuye!
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