I-12 Intshi ye-SOI Wafer

Inkcazelo emfutshane:

Yiba namava okwenza izinto ezintsha ngendlela ongazange wazi ngayo ngaphambili nge-12 Intshi ye-SOI Wafer yaseburhulumenteni, ummangaliso wobugcisa oziswe kuwe nge-VET Energy. Yenziwe ngokuchaneka kunye nobuchule, esi siqwenga seSilicon-On-Insulator sichaza kwakhona imigangatho yoshishino, sinikezela ngomgangatho ongenakulinganiswa kunye nokusebenza.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

I-VET Energy i-12-intshi ye-SOI yafer sisixhobo se-semiconductor substrate esisebenza kakhulu, esithandwa kakhulu ngenxa yeempawu zayo zombane ezibalaseleyo kunye nesakhiwo esisodwa. Amandla e-VET asebenzisa iinkqubo zokwenziwa kwe-SOI ye-wafer ephucukileyo ukuqinisekisa ukuba i-wafer inokuvuza okuphantsi kakhulu ngoku, isantya esiphezulu kunye nokumelana nemitha, ibonelela ngesiseko esiluqilima kwiisekethe zakho ezisebenza ngokuphezulu ezidibeneyo.

Umgca wemveliso we-VET Energy awuphelelanga kwii-SOI wafers. Sikwabonelela ngoluhlu olubanzi lwezixhobo zesemiconductor substrate, kubandakanya iSi Wafer, iSiC Substrate, iSiN Substrate, iEpi Wafer, njl. Ezi mveliso zinokuhlangabezana neemfuno zesicelo zabathengi abahlukeneyo kumandla ombane, iRF, abenzi boluvo kunye nezinye iindawo.

Ukuqwalasela ukugqwesa, ii-wafers zethu ze-SOI nazo zisebenzisa izinto eziphambili ezifana ne-gallium oxide Ga2O3, iikhasethi kunye ne-AlN wafers ukuqinisekisa ukuthembeka nokusebenza kakuhle kuwo wonke umgangatho wokusebenza. Thembela kwi-VET Energy ukuba ibonelele ngezisombululo ezikumgangatho ophezulu ezivula indlela yokuqhubela phambili kwezobuchwepheshe.

Khulula amandla eprojekthi yakho ngokusebenza okugqwesileyo kweVET Energy 12-intshi ye-SOI wafers. Yongeza izakhono zakho zokuqamba izinto ezintsha ngeewafers ezibandakanya umgangatho, ukuchaneka kunye nokuqamba izinto ezintsha, ubeka isiseko sempumelelo kwicandelo eliguqukayo letekhnoloji ye-semiconductor. Khetha i-VET Energy ye-premium SOI wafer izisombululo ezidlula ukulindela.

IINGCACISO ZOKUPHAZAMISEKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into	8-intshi	6-Intshi			4-intshi
Into	nP	n-Pm	n-Nd	SI	SI
TTV(GBIR)	≤6um	≤6um
I-Bow(GF3YFCD)-Ixabiso elipheleleyo	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
I-LTV(SBIR)-10mmx10mm	<2μm
Wafer Edge	Beveling

UPHANDO GQIBELA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into	8-intshi	6-Intshi			4-intshi
	nP	n-Pm	n-Nd	SI	SI
Umphezulu Gqiba	Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP
Ubunzima boMphezulu	(10um x 10um) Si-FaceRa≤0.2nm I-C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm I-C-Face Ra≤0.5nm
IiChips zoMda	Akukho okuvunyelweyo (ubude nobubanzi≥0.5mm)
Iindenti	Akukho Ivumelekileyo
Imikrwelo(Si-Face)	Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter	Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter			Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter
Iintanda	Akukho Ivumelekileyo
Ukungabandakanywa kuMda	3mm