Tsarin haɓaka lu'ulu'u na silicon carbide da fasahar kayan aiki

1. Hanyar fasahar girma lu'ulu'u ta SiC

PVT (hanyar sublimation),

HTCVD (CVD mai yawan zafin jiki),

LPE(hanyar lokaci na ruwa)

abubuwa uku ne gama gariGilashin SiChanyoyin girma;

Hanyar da aka fi sani a masana'antar ita ce hanyar PVT, kuma fiye da kashi 95% na lu'ulu'u guda ɗaya na SiC ana noma su ta hanyar hanyar PVT;

Masu masana'antuGilashin SiCTanderun girma yana amfani da hanyar fasahar PVT ta masana'antu.

2. Tsarin girma na lu'ulu'u na SiC

Haɗa foda-maganin iri na kristal-girman kristal-ingot annealing-wafer ɗin wafersarrafawa.

3. Hanyar PVT don girmaLu'ulu'u na SiC

Ana sanya kayan albarkatun SiC a ƙasan graphite crucible, kuma lu'ulu'u na iri na SiC yana saman graphite crucible. Ta hanyar daidaita rufin, zafin da ke wurin albarkatun SiC ya fi girma kuma zafin da ke wurin kristal iri ya fi ƙasa. Kayan albarkatun SiC a babban zafin jiki yana raguwa kuma yana ruɓewa zuwa abubuwan da ke faruwa a lokacin iskar gas, waɗanda ake jigilar su zuwa lu'ulu'u na iri tare da ƙaramin zafin jiki kuma suna yin lu'ulu'u don samar da lu'ulu'u na SiC. Tsarin girma na asali ya haɗa da matakai uku: rushewa da sublimation na kayan albarkatun ƙasa, canja wurin taro, da kuma lu'ulu'u akan lu'ulu'u na iri.

Rushewa da kuma sublimation na albarkatun kasa:

SiC(S)= Si(g)+C(S)

2SiC(S)=Si(g)+SiC2(g)

2SiC(S)=C(S)+SiC2(g)

A lokacin canja wurin taro, Si vapor yana ƙara amsawa tare da bangon graphite crucible don samar da SiC2 da Si2C:

Si(g)+2C(S) =SiC2(g)

2Si(g) +C(S)=Si2C(g)

A saman gilashin iri, matakan iskar gas guda uku suna girma ta hanyoyi guda biyu masu zuwa don samar da lu'ulu'u na silicon carbide:

SiC2_(g)+Si2C_(g)= 3SiC_(s)

Si_(g)+SiC2_(g)= 2SiC_(S)

4. Hanyar PVT don haɓaka hanyar fasahar kayan aikin haɓaka lu'ulu'u na SiC

A halin yanzu, dumamar induction hanya ce ta fasaha gama gari don tanderun girma na lu'ulu'u na SiC ta hanyar PVT;

Dumamawar waje ta Coil da kuma dumama juriya ga graphite sune alkiblar ci gabanGilashin SiCmurhunan girma.

5. Tanderun girma mai ƙarfin inci 8 na SiC mai inci 8

(1) Dumama yanayigraphite Crucible kayan dumamata hanyar shigar da filin maganadisu; daidaita filin zafin jiki ta hanyar daidaita wutar dumama, matsayin na'urar, da tsarin rufin;

(2) Dumama graphite crucible ta hanyar dumama da watsawar hasken zafi ta hanyar juriya ga graphite; sarrafa filin zafin jiki ta hanyar daidaita kwararar hita graphite, tsarin hita, da kuma sarrafa kwararar yanayi na yanki;