Uburyo bwo gukura kwa silicon carbide crystal na technology

1. Inzira y'ikoranabuhanga ryo gukura kwa kristu ya SiC

PVT (uburyo bwo gupima imiterere y'umubiri),

HTCVD (indwara y'ubushyuhe bwinshi),

LPE(uburyo bwo gukoresha icyiciro cy'amazi)

ni bitatu bihuriwehoKristale ya SiCuburyo bwo gukura;

Uburyo buzwi cyane mu nganda ni uburyo bwa PVT, kandi ibirenga 95% bya kristu imwe ya SiC ihingwa hakoreshejwe uburyo bwa PVT;

IngandaKristale ya SiCIfuru yo gukura ikoresha ikoranabuhanga rya PVT rikoreshwa mu nganda.

2. Uburyo bwo gukura kwa kristu ya SiC

Gutunganya ifu-uburyo bwo kuvura imbuto za kristu-uburyo bwo gukuraho kristu-uburyo bwo gukurura ingot-agace gatogutunganya.

3. Uburyo bwa PVT bwo gukuraKristale za SiC

Ibikoresho fatizo bya SiC bishyirwa hasi ku gice cyo hejuru cya grafiti, naho kristu y'imbuto ya SiC ikaba hejuru ya kristu y'imbuto. Mu guhindura uburyo bwo gushyushya, ubushyuhe ku bikoresho fatizo bya SiC buba bwinshi kandi ubushyuhe ku gikoresho cy'imbuto buba buke. Ibikoresho fatizo bya SiC ku bushyuhe bwinshi birahinduka ibintu bihinduka gaze phase, bijyanwa muri kristu y'imbuto ifite ubushyuhe buke hanyuma bigahinduka kristu ya SiC. Uburyo bw'ibanze bwo gukura burimo inzira eshatu: kubora no gukwirakwiza ibikoresho fatizo, kohereza ibintu byinshi, no gushushanya kuri kristu y'imbuto.

Gusesa no gukwirakwiza ibikoresho fatizo:

SiC(S)= Si(g)+C(S)

2SiC(S)= Si(g)+ SiC2(g)

2SiC(S)=C(S)+SiC2(g)

Mu gihe cyo kohereza ibintu byinshi, umwuka wa Si urushaho gukorana n'urukuta rwa grafiti rukora SiC2 na Si2C:

Si(g)+2C(S) =SiC2(g)

2Si(g) +C(S)=Si2C(g)

Ku buso bwa kristu y'imbuto, ibice bitatu bya gaze bikura binyuze muri formula ebyiri zikurikira kugira ngo hakorwe kristu za silika carbide:

SiC2_(g)+Si2C_(g)=3SiC_(s)

Si_(g)+SiC2_(g)=2SiC_(S)

4. Uburyo bwa PVT bwo guhinga ibikoresho bya kristale ya SiC hakoreshejwe ikoranabuhanga

Muri iki gihe, gushyushya induction ni uburyo busanzwe bw'ikoranabuhanga mu matanura ya PVT yo mu bwoko bwa SiC crystal growth;

Gushyushya induction external coil na grafiti resistance heating ni icyerekezo cy'iterambere ryaKristale ya SiCamatanura yo gukura.

Ifuru ishyushya ya SiC ifite uburebure bwa santimetero 5.8

(1) Gushyushyaicyuma gikozwe muri grafiti igikoresho gishyushyabinyuze mu gutera imbaraga za rukuruzi; kugenzura ubushyuhe binyuze mu guhindura imbaraga z'ubushyuhe, aho coil iherereye, n'imiterere y'ubushyuhe;

(2) Gushyushya icyuma gishyushya hakoreshejwe ubushyuhe burwanya ubushyuhe bwa graphite no gutwara imirasire y'ubushyuhe; kugenzura ubushyuhe hakoreshejwe guhindura imiterere y'amashanyarazi ya graphite, imiterere y'icyuma gishyushya, n'uburyo umuriro ugenzurwa n'ikirere;