Inqubo yokukhula kwekristalu ye-silicon carbide kanye nobuchwepheshe bemishini

1. Indlela yobuchwepheshe bokukhula kwekristalu ye-SiC

I-PVT (indlela yokunciphisa i-sublimation),

I-HTCVD (i-CVD yokushisa okuphezulu),

I-LPE(indlela yesigaba soketshezi)

ezintathu zivamileIkristalu le-SiCizindlela zokukhula;

Indlela eyaziwa kakhulu embonini yindlela ye-PVT, futhi amakristalu angaphezu kwama-95% e-SiC akhuliswa ngendlela ye-PVT;

EzimboniIkristalu le-SiCI-growth furnace isebenzisa umzila wobuchwepheshe be-PVT ojwayelekile embonini.

2. Inqubo yokukhula kwekristalu ye-SiC

Ukwenziwa kwempuphu-ukwelashwa kwekristalu yembewu-ukukhula kwekristalu-ukuncibilikisa i-ingot-i-waferukucubungula.

3. Indlela ye-PVT yokukhulisaAmakristalu e-SiC

Izinto zokusetshenziswa ze-SiC zibekwe phansi kwe-graphite crucible, kanti i-SiC seed crystal iphezulu kwe-graphite crucible. Ngokulungisa i-insulation, izinga lokushisa ezintweni zokusetshenziswa ze-SiC liphakeme kanti izinga lokushisa kwi-seed crystal liphansi. Izinto zokusetshenziswa ze-SiC ezisezingeni lokushisa eliphezulu ziyancibilika futhi zibole zibe izinto zesigaba segesi, ezithuthwa ziye kwi-seed crystal ngokushisa okuphansi bese ziqina ukuze zakhe amakristalu e-SiC. Inqubo yokukhula eyisisekelo ihlanganisa izinqubo ezintathu: ukubola kanye nokufakwa kwezinto zokusetshenziswa, ukudluliselwa kwesisindo, kanye nokufakwa kwamakristalu kumakristalu embewu.

Ukubola kanye nokususwa kwezinto zokusetshenziswa:

I-SiC(S)= I-Si(g)+I-C(S)

2SiC(S)= Si(g)+ SiC2(g)

2SiC(S)=C(S)+SiC2(g)

Ngesikhathi sokudluliselwa kwesisindo, i-Si vapor isabela kakhulu odongeni olukwazi ukumbozwa nge-graphite ukuze yakhe i-SiC2 ne-Si2C:

I-Si(g)+2C(S) =SiC2(g)

2Si(g) +C(S)=Si2C(g)

Phezu kwekristalu yembewu, izigaba ezintathu zegesi zikhula ngokusebenzisa amafomula amabili alandelayo ukukhiqiza amakristalu e-silicon carbide:

I-SiC2_(g)+Si2C_(g)=3SiC_(ama)

Si_(g)+SiC2_(g)=2SiC_(S)

4. Indlela ye-PVT yokukhulisa umzila wobuchwepheshe bemishini yokukhulisa ikristalu ye-SiC

Njengamanje, ukushisa kokungeniswa kuyindlela yobuchwepheshe evamile yezitofu zokukhulisa ikristalu ze-SiC zendlela ye-PVT;

Ukushisa kwe-induction yangaphandle kwe-Coil kanye nokushisa kokumelana ne-graphite kuyisiqondiso sokuthuthukiswaIkristalu le-SiCizitofu zokukhula.

Isithando sokukhulisa ukushisa se-SiC esingu-5.8-intshi

(1) Ukushisaisitsha sokubethela se-graphite isici sokushisangokusebenzisa i-magnetic field induction; ukulawula insimu yokushisa ngokulungisa amandla okushisa, isikhundla sekhoyili, kanye nesakhiwo sokushisa;

(2) Ukushisa i-graphite crucible ngokushisa okumelana ne-graphite kanye nokuqhutshwa kwemisebe yokushisa; ukulawula insimu yokushisa ngokulungisa ugesi we-graphite heater, isakhiwo se-heater, kanye nokulawula ugesi we-zone;