Inkqubo yokukhula kwekristale yeSilicon carbide kunye netekhnoloji yezixhobo

1. Indlela yeteknoloji yokukhula kwekristale yeSiC

I-PVT (indlela yokunciphisa inkunkuma),

I-HTCVD (i-CVD enobushushu obuphezulu),

I-LPE(indlela yesigaba solwelo)

zithathu ezixhaphakileyoIkristale yeSiCiindlela zokukhula;

Eyona ndlela yaziwayo kushishino yindlela yePVT, kwaye ngaphezulu kwe-95% yeekristale zeSiC ezingatshatanga zikhuliswa ngendlela yePVT;

EzoshishinoIkristale yeSiCI-growth furnace isebenzisa indlela yetekhnoloji ye-PVT ephambili kushishino.

2. Inkqubo yokukhula kwekristale yeSiC

Ukwenziwa komgubo-unyango lwekristale yembewu-ukukhula kwekristale-ingot annealing-i-waferukucubungula.

3. Indlela ye-PVT yokukhulisaIikristale zeSiC

Izinto eziluhlaza zeSiC zibekwe ezantsi kwe-graphite crucible, kwaye i-SiC seed crystal iphezulu kwe-graphite crucible. Ngokulungisa i-insulation, ubushushu kwi-SiC rewrite material buphezulu kwaye ubushushu kwi-seed crystal buphantsi. Izinto eziluhlaza zeSiC kubushushu obuphezulu ziyanyibilika kwaye zibole zibe zizinto ze-gas phase, ezithuthwa ziye kwi-seed crystal ngobushushu obuphantsi kwaye ziqine ukuze zenze iikristale zeSiC. Inkqubo yokukhula esisiseko ibandakanya iinkqubo ezintathu: ukubola kunye nokunciphisa izinto eziluhlaza, ukudluliselwa kobunzima, kunye nokuqinisa iikristale kwimbewu.

Ukubola kunye nokususwa kwezinto ezikrwada:

I-SiC(S)= I-Si(g)+I-C(S)

2SiC(S)= Si(g)+ SiC2(g)

2SiC(S)=C(S)+SiC2(g)

Ngexesha lokudluliselwa kobunzima, i-Si vapor iphinda iphendule nodonga oluqhekezayo lwe-graphite ukuze yenze i-SiC2 kunye ne-Si2C:

I-Si(g)+2C(S) =SiC2(g)

2Si(g) +C(S)=Si2C(g)

Kumphezulu wekristale yembewu, la manqanaba mathathu egesi akhula ngokusebenzisa ezi fomyula zimbini zilandelayo ukuvelisa iikristale ze-silicon carbide:

I-SiC2_(g)+Si2C_(g)=3SiC_(s)

Si_(g)+SiC2_(g)=2SiC_(S)

4. Indlela ye-PVT yokukhulisa indlela yetekhnoloji yezixhobo zokukhulisa ikristale ye-SiC

Okwangoku, ukufudumeza ngokufakelwa yindlela yetekhnoloji eqhelekileyo kwiifurniture zokukhula kwekristale ze-SiC zendlela ye-PVT;

Ukufudumeza kwangaphandle kwe-coil kunye nokufudumeza ukumelana ne-graphite yindlela yophuhlisoIkristale yeSiCiziko zokukhula.

5. Isithando sokukhulisa ubushushu se-SiC esiyi-intshi ezi-8

(1) Ukufudumezaisixhobo sokubethela igrafayithi into yokufudumezangokusebenzisa i-magnetic field induction; ukulawula i-temperature field ngokulungelelanisa amandla okufudumeza, indawo ye-coil, kunye nesakhiwo se-insulation;

(2) Ukufudumeza i-graphite crucible ngokusebenzisa ukufudumeza okumelana ne-graphite kunye nokuhanjiswa kwemitha yobushushu; ukulawula intsimi yobushushu ngokulungelelanisa umbane we-graphite heater, ulwakhiwo lwe-heater, kunye nolawulo lombane wezone;