Isiseko sokusila samatye e-SIC sineempawu zokumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, i-asidi, i-alkali, ityuwa kunye ne-organic reagents, kunye nomsebenzi ozinzileyo womzimba kunye neekhemikhali. Xa kuthelekiswa negraphite yobunyulu obuphezulu, igraphite yococeko ephezulu kwi-400 ℃ iqala i-oxidation enzulu, nokuba iqondo lobushushu alikho phezulu, isicelo sexesha elide siya kuba ngenxa ye-oxidation kunye nomgubo, sithembele kwi-workpiece kunye netafile okanye ungcoliseko lokusetyenziswa kokusingqongileyo, ngoko ke i-SIC yokugquma i-graphite isiseko njengenkqubo entsha ye-MOCVD yokucoca i-powder, ithatha indawo entsha ye-MOCVD yomgubo.
Iimpawu eziphambili:
1. Ubushushu obuphezulu be-antioxidant: i-antioxidant, umsebenzi we-antioxidant usemhle kakhulu xa ubushushu buphezulu njenge-1600 ℃;
2. Ukucoceka okuphezulu: kufunyenwe ngendlela yokubeka umphunga wekhemikhali phantsi kobushushu obuphezulu be-chlorination;
3. Ukumelana nokhukuliseko: ubunzima obuphezulu, ubuso obuxineneyo, amasuntswana amahle;
Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye ne-organic reagents;
5. I-SIC surface layer yi-β-silicon carbide, i-cubic egxile ebusweni.
Ixesha lokuposa: Feb-20-2023