Isiseko sokugaya amatye esigqunywe yi-SIC sineempawu zokuxhathisa ubushushu obuphezulu, ukumelana ne-oxidation, ubunyulu obuphezulu, i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic, kunye nomsebenzi ozinzileyo we-physical kunye neekhemikhali. Xa kuthelekiswa ne-graphite ecocekileyo ephezulu, i-graphite ecocekileyo ephezulu kwi-400℃ iqala i-oxidation enamandla, nokuba ubushushu abuphezulu, ukusetyenziswa kwexesha elide kuya kuba ngenxa ye-oxidation kunye nomgubo, kuxhomekeke kwi-workpiece kunye netafile okanye ungcoliseko lokusetyenziswa kwendalo, ngoko ke isiseko se-graphite yokugquma ye-SIC njengesixhobo esitsha se-MOCVD, inkqubo yokusila umgubo ngokuthe ngcembe ithatha indawo ye-graphite ecocekileyo ephezulu.
Iimpawu eziphambili:
1. I-antioxidant yobushushu obuphezulu: i-antioxidant, umsebenzi we-antioxidant usemhle kakhulu xa ubushushu bufikelela kwi-1600℃;
2. Ubunyulu obuphezulu: bufunyenwe ngendlela yokubeka umphunga weekhemikhali phantsi kwemeko ye-chlorination yobushushu obuphezulu;
3. Ukumelana nokukhukuliseka: ubunzima obuphezulu, umphezulu oxineneyo, amasuntswana amancinci;
Ukumelana nokugqwala: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic;
5. Umaleko womphezulu we-SIC yi-β-silicon carbide, ityhubhu ejonge ubuso.
Ixesha lokuthumela: Februwari-20-2023