Ingcaciso yeMveliso
Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iiseramikhi kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli ze-SiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenza umaleko wokhuselo we-SIC.
Iimpawu eziphambili:
1. Ukumelana nobushushu obuphezulu be-oxidation:
Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.
2. Ukucoceka okuphezulu : yenziwe yi-chemical vapor deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.
3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.
IiNgcaciso eziphambili ze-CVD-SIC Coating
| Iipropati zeSiC-CVD | ||
| Ulwakhiwo lweCrystal | iFCC β isigaba | |
| Ukuxinana | g/cm ³ | 3.21 |
| Ukuqina | Vickers ubulukhuni | 2500 |
| Ubungakanani benkozo | μm | 2~10 |
| Ucoceko lweMichiza | % | 99.99995 |
| Ubushushu Umthamo | J·kg-1 ·K-1 | 640 |
| Iqondo lobushushu elisezantsi | ℃ | 2700 |
| Amandla eFelexural | MPa (RT 4-point) | 415 |
| Imodulus eselula | I-Gpa (4pt bend, 1300℃) | 430 |
| Ukwandiswa kweThermal (CTE) | 10-6K-1 | 4.5 |
| I-Thermal conductivity | (W/mK) | 300 |
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