vet-china ikubweretsa Boti la Wafer lamakono lomwe lapangidwa kuti ligwiritsidwe ntchito m'badwo wotsatira wa opanga ma semiconductor. Boti lopangidwa mwaluso kwambiri ili limapereka kulondola kopambana pakugwiritsa ntchito ma wafer, kuonetsetsa kuti ntchito zake sizimasokonekera komanso kuchepetsa kwambiri chiopsezo cha kuwonongeka panthawi yokonza.
Yomangidwa ndi zipangizo zapamwamba kwambiri, Boti la Contiguous Wafer lili ndi kukhazikika kwa kutentha komanso kukana mankhwala, zomwe zimapangitsa kuti likhale loyenera kwambiri m'malo otentha komanso oopsa a mankhwala. Kapangidwe kake katsopano kamatsimikizira kuti ma wafer amasungidwa bwino komanso ali bwino, zomwe zimapangitsa kuti ntchito yopangira zinthu izi ikhale yogwira ntchito bwino komanso yothandiza.
Boti lamakono la wafer lapangidwa kuti likwaniritse zosowa zofunika za mafakitale amakono a semiconductor, zomwe zimathandiza kukula ndi mawonekedwe osiyanasiyana a wafer. Mwa kuphatikiza Boti la Wafer Logwirizana ndi vet-china mu mzere wanu wopangira, mutha kuyembekezera magwiridwe antchito abwino, nthawi yochepa yopuma, komanso kuchuluka kwa zokolola.
Dziwani kusiyana kwa kudzipereka kwa vet-china pakupanga zinthu zabwino komanso zatsopano, popereka zinthu zomwe zimapititsa patsogolo kupanga zinthu za semiconductor. Sankhani Boti la Wafer Lokhala ndi Contiguous ndikukweza luso lanu lokonza ma wafer kufika pamlingo watsopano.
Katundu wa silicon carbide yobwezeretsedwanso
Silikoni carbide yobwezeretsedwanso (R-SiC) ndi chinthu cholimba kwambiri chomwe chili ndi kuuma kwachiwiri kuposa diamondi, chomwe chimapangidwa kutentha kwambiri kuposa 2000℃. Chimasunga zinthu zambiri zabwino za SiC, monga mphamvu yotentha kwambiri, kukana dzimbiri mwamphamvu, kukana okosijeni bwino, kukana kutentha kwambiri ndi zina zotero.
● Kapangidwe kabwino kwambiri ka makina. Silicon carbide yobwezeretsedwanso imakhala ndi mphamvu komanso kulimba kwambiri kuposa ulusi wa kaboni, imakana kugwedezeka kwambiri, imatha kugwira ntchito bwino m'malo otentha kwambiri, imatha kugwira ntchito bwino motsutsana ndi zinthu zosiyanasiyana. Kuphatikiza apo, ilinso ndi kusinthasintha kwabwino ndipo siiwonongeka mosavuta potambasula ndi kupindika, zomwe zimapangitsa kuti igwire bwino ntchito.
● Kukana dzimbiri kwambiri. Silicon carbide yobwezeretsedwanso imakhala ndi kukana dzimbiri kwambiri ku mitundu yosiyanasiyana ya zinthu, imatha kuletsa kuwonongeka kwa mitundu yosiyanasiyana ya zinthu zowononga, imatha kusunga mawonekedwe ake a makina kwa nthawi yayitali, imakhala yolimba kwambiri, kotero kuti imakhala ndi moyo wautali. Kuphatikiza apo, ilinso ndi kukhazikika kwabwino kwa kutentha, imatha kusintha kutentha, komanso kusintha momwe imagwiritsidwira ntchito.
● Kupukuta sikuchepa. Chifukwa njira yopukuta sichepa, palibe kupsinjika kotsalira komwe kungayambitse kusintha kapena kusweka kwa chinthucho, ndipo zigawo zokhala ndi mawonekedwe ovuta komanso olondola kwambiri zitha kukonzedwa.
| 重结晶碳化硅物理特性 Kapangidwe ka thupi ka Silicon Carbide Yobwezeretsedwanso | |
| 性质 / Katundu | 典型数值 Mtengo Wamba |
| 使用温度/ Kutentha kogwira ntchito (°C) | 1600°C (ndi mpweya), 1700°C (malo ochepetsera kutentha) |
| SiC含量/ Zomwe zili mu SiC | > 99.96% |
| 自由Si 含量/ Zaulere za Si | < 0.1% |
| 体积密度/Kuchuluka kwa zinthu zambiri | 2.60-2.70 g/cm3 |
| 气孔率/ Kuoneka ngati ma porosity | < 16% |
| 抗压强度/ Mphamvu yopondereza | > 600MPa |
| 常温抗弯强度/Mphamvu yopinda yozizira | 80-90 MPa (20°C) |
| 高温抗弯强度Mphamvu yopinda yotentha | 90-100 MPa (1400°C) |
| 热膨胀系数/ Kutentha kwakukulu @1500°C | 4.70 10-6/°C |
| 导热系数/Kutentha kwa mpweya @1200°C | 23W/m•K |
| 杨氏模量/ Modulus yotanuka | 240 GPa |
| 抗热震性/ Kukana kutentha kwa kutentha | Zabwino kwambiri |
VET Energy ndi awopanga weniweni wa zinthu zopangidwa ndi graphite ndi silicon carbide zokhala ndi zokutira za CVD,akhoza kuperekazosiyanasiyanazida zopangidwira makampani opanga ma semiconductor ndi photovoltaic. OGulu lanu laukadaulo limachokera ku mabungwe apamwamba ofufuza zamkati, likhoza kupereka mayankho aukadaulo ambirizanu.
Timapanga njira zamakono nthawi zonse kuti tipereke zipangizo zamakono kwambiri,ndiagwiritsa ntchito ukadaulo wapadera wokhala ndi patent, womwe ungapangitse kuti mgwirizano pakati pa chophimba ndi substrate ukhale wolimba komanso wosasinthasintha.
| Matenda a mtima (CVD) SiC薄膜基本物理性能 Makhalidwe oyambira a CVD SiCchophimba | |
| 性质 / Katundu | 典型数值 Mtengo Wamba |
| 晶体结构 / Kapangidwe ka Crystal | Gawo la FCC β多晶，主要為（111）取向 |
| 密度 / Kuchulukana | 3.21 g/cm³ |
| 硬度 / Kuuma | 2500 维氏硬度 (500g katundu) |
| 晶粒大小 / Tirigu Waukulu | 2 ~ 10μm |
| 纯度 / Kuyera kwa Mankhwala | 99.99995% |
| 热容 / Kutha Kutentha | 640 J·kg-1·K-1 |
| 升华温度 / Kutentha kwa Sublimation | 2700℃ |
| 抗弯强度 / Mphamvu Yosinthasintha | 415 MPa RT 4-point |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt kupindika, 1300℃ |
| 导热系数 / KutenthalKuyendetsa bwino | 300W·m-1·K-1 |
| 热膨胀系数 / Kukulitsa Kutentha (CTE) | 4.5×10-6K-1 |
Tikulandirani mosangalala kuti mudzacheze fakitale yathu, tiyeni tikambirane zambiri!
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