vet-China yazanye ubwato bugezweho bwa Contiguous Wafer bwakorewe mu cyiciro gitaha cy’inganda za semiconductor. Ubu bwato bwakozwe neza butanga ubuziranenge budasanzwe mu gutwara wafer, butuma imikorere yayo igenda neza kandi bugabanya cyane ibyago byo kwangirika mu gihe cyo gutunganya.
Yubatswe mu bikoresho byiza cyane, ubwato bwa Contiguous Wafer bufite ubushobozi bwo kudahinduka mu bushyuhe no kudahinduka mu buryo budasanzwe, bigatuma buba bwiza cyane mu bidukikije birimo ubushyuhe bwinshi n’ubukonje. Imiterere yabwo igezweho ituma uduce twa wafer dufatwa neza kandi tugahuzwa neza, bigatuma umusaruro urushaho kwiyongera kandi bikongera imikorere myiza mu nganda.
Ubu bwato bugezweho bwa wafer bwagenewe guhaza ibyifuzo bikomeye by’ibikoresho bigezweho bya semiconductor, bushyigikira ingano zitandukanye n’imiterere ya wafer. Mu gushyira mu bikorwa ubwato bwawe bwa Contiguous Wafer bwa vet-china, ushobora kwitega kongera umusaruro, kugabanuka kw’igihe cyo gukora, no kwiyongera k’umusaruro.
Irebere itandukaniro ry’ubwitange bwa vet-china mu ireme n’udushya, itanga ibicuruzwa birenga imbibi z’inganda za semiconductor. Hitamo ubwato bwa Contiguous Wafer hanyuma uzamure ubushobozi bwawe bwo gutunganya wafer ku rwego rushya.
Imiterere ya karubide ya silikoni yasubiwemo
Karubide ya silikoni ikoreshwa mu gusya (R-SiC) ni ibikoresho bikora neza cyane kandi bifite ubukana bwa kabiri nyuma ya diyama, ikaba ikora ku bushyuhe buri hejuru ya 2000°C. Igumana imiterere myiza ya SiC, nko gukomera ku bushyuhe bwinshi, kurwanya ingese cyane, kurwanya ogisijeni neza, kurwanya ubushyuhe neza n'ibindi.
● Imiterere myiza cyane ya mekanike. Karubide ya silikoni isubijwemo ifite imbaraga n'ubukana bwinshi kurusha fibre ya karuboni, irwanya ingaruka nyinshi, ishobora kugira imikorere myiza mu bushyuhe bukabije, ishobora kugira imikorere myiza mu bihe bitandukanye. Byongeye kandi, ifite ubushobozi bwo koroha kandi ntiyoroshye kwangirika no kurambura no kunama, ibyo bikaba birushaho kunoza imikorere yayo.
● Irwanya cyane ingese. Karubide ya silikoni isubijwemo ifite ubudahangarwa bwinshi ku ngese ku buryo bwinshi, ishobora gukumira isenyuka ry’ingese zitandukanye, ishobora kugumana imiterere yayo ya mekanike igihe kirekire, ifite ubushobozi bwo gufata neza, ku buryo imara igihe kirekire. Byongeye kandi, ifite ubushyuhe bwiza, ishobora kwihuza n’impinduka zimwe na zimwe z’ubushyuhe, inongera ingaruka zayo mu ikoreshwa ryayo.
● Gutunganya ibintu ntibigabanuka. Kubera ko uburyo bwo gutunganya ibintu butagabanuka, nta kintu na kimwe gisigaye gishobora gutuma ibicuruzwa bihinduka cyangwa bigacika, kandi ibice bifite imiterere igoye kandi bifite ubuhanga buhanitse bishobora gutegurwa.
| 重结晶碳化硅物理特性 Imiterere ifatika ya Silicon Carbide yongeye gukoreshwa | |
| 性质 / Umutungo | 典型数值 / Agaciro Gasanzwe |
| 使用温度/ Ubushyuhe bw'akazi (°C) | 1600°C (harimo ogisijeni), 1700°C (ibidukikije bigabanya) |
| SiC含量/ Ibikubiye muri SiC | > 99.96% |
| 自由Si 含量/ Ibikubiyemo bya Si ku buntu | < 0.1% |
| 体积密度/Ubucucike bw'umubyimba | 2.60-2.70 g/cm3 |
| 气孔率/ Ubuso bugaragara nk'ubufite imyenge | < 16% |
| 抗压强度/ Imbaraga zo gukanda | > 600MPa |
| 常温抗弯强度/Imbaraga zo kunama zikonje | 80-90 MPa (20°C) |
| 高温抗弯强度Imbaraga zishyushye zo kunama | 90-100 MPa (1400°C) |
| 热膨胀系数/ Kwaguka k'ubushyuhe kuri 1500°C | 4.70 10-6/°C |
| 导热系数/Ubushobozi bwo gutwara ubushyuhe kuri 1200°C | 23Ubuso/m•K |
| 杨氏模量/ Moduli ya elastic | 240 GPa |
| 抗热震性/ Ubudahangarwa bw'ingufu ziterwa n'ubushyuhe | Ni byiza cyane |
VET Energy ni iuruganda nyarwo rukora ibikoresho bya graphite na silicon carbide byihariye hamwe n'imvange ya CVD,ishobora gutangabitandukanyeibice byihariye byo mu nganda za semiconductor na photovoltaic. OItsinda ryanyu rya tekiniki rituruka mu bigo bikomeye by’ubushakashatsi mu gihugu, rishobora gutanga ibisubizo by’ibikoresho by’umwuga.kuri wowe.
Dukomeza guteza imbere inzira zigezweho kugira ngo dutange ibikoresho bigezweho,nabakoze ikoranabuhanga ryihariye rifite patenti, rishobora gutuma isano iri hagati y’igitambaro n’icyuma gifunga ibintu irushaho gukomera kandi ntigishobora gutandukana cyane.
| CVD SiC薄膜基本物理性能 Imiterere y'ibanze ya CVD SiCgusiga | |
| 性质 / Umutungo | 典型数值 / Agaciro Gasanzwe |
| 晶体结构 / Imiterere ya kristu | Icyiciro cya FCC β多晶，主要为（111 ）取向 |
| 密度 / Ubucucike | 3.21 g/cm³ |
| 硬度 / Ubukomere | 2500 维氏硬度（ 500g umutwaro） |
| 晶粒大小 / Ubunini bw'ibinyampeke | 2 ~ 10μm |
| 纯度 / Ubuziranenge bw'ibinyabutabire | 99.99995% |
| 热容 / Ubushobozi bwo gushyuha | 640 J·kg-1·K-1 |
| 升华温度 / Ubushyuhe bwo gushyuha | 2700℃ |
| 抗弯强度 / Imbaraga zo Kongera Uburemere | 415 MPa RT ifite amanota 4 |
| 杨氏模量 / Modulus y'Abana | 430 Gpa 4pt bend, 1300℃ |
| 导热系数 / ThermalUbushobozi bwo kuyobora | 300W·m-1·K-1 |
| 热膨胀系数 / Kwagura ubushyuhe (CTE) | 4.5×10-6K-1 |
Turaguhaye ikaze mu gusura uruganda rwacu, reka tugire ibiganiro birambuye!
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