Isikebhe Esihlanganisiwe Esihlanganisiwe

Isithombe Esivelele Sesikebhe Esihlanganisiwe Se-Wafer

Incazelo emfushane:

Isikebhe i-Contiguous Wafer Boat esivela ku-vet-china senzelwe ukuphathwa kahle kwe-wafer ekukhiqizeni i-semiconductor. Njengoba sakhiwe ngokunemba, isixazululo se-vet-china siqinisekisa ukuzinza kokushisa kanye nokumelana namakhemikhali, senza ngcono izinqubo zokukhiqiza ngenkathi kunciphisa umonakalo kanye nokuthuthukisa ukuphuma kwamandla.

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

I-vet-china yethula i-Contiguous Wafer Boat esezingeni eliphezulu eyenzelwe isizukulwane esilandelayo sokukhiqiza ama-semiconductor. Lesi sikebhe esiklanywe ngokucophelela sinikeza ukunemba okungenakuqhathaniswa ekuphatheni ama-wafer, siqinisekisa ukusebenza okungenamthungo futhi sinciphisa kakhulu ingozi yokulimala ngesikhathi sokucubungula.

Yakhiwe ngezinto ezisezingeni eliphezulu, i-Contiguous Wafer Boat inesimo esihle kakhulu sokuqina kokushisa kanye nokumelana namakhemikhali ngendlela emangalisayo, okwenza ibe yindawo ekahle kakhulu ezindaweni ezinokushisa okuphezulu kanye namakhemikhali aqinile. Umklamo wayo omusha uqinisekisa ukuthi ama-wafer abanjwe kahle futhi aqondaniswe kahle, okwenza kube ngcono ukusebenza kahle kokukhiqiza futhi kwandise ukusebenza kahle kokukhiqiza.

Lesi sikebhe se-wafer esisezingeni eliphezulu senzelwe ukuhlangabezana nezidingo ezidingakalayo zefenisha yesimanje ye-semiconductor, sisekela osayizi abahlukahlukene be-wafer kanye nokucushwa. Ngokufaka i-Contiguous Wafer Boat evela ku-vet-china emgqeni wakho wokukhiqiza, ungalindela ukusebenza okuthuthukisiwe, isikhathi esincishisiwe sokungasebenzi, kanye namazinga okukhiqiza akhuphukile.

Thola umehluko ngokuzibophezela kwe-vet-china ekhwalithini nasekusunguleni izinto ezintsha, ukuletha imikhiqizo edlula imingcele yokukhiqiza ama-semiconductor. Khetha i-Contiguous Wafer Boat bese uphakamisa amakhono akho okucubungula ama-wafer abe phezulu.

Izakhiwo ze-silicon carbide ephinde yasetshenziswa

I-silicon carbide ephinde yasetshenziswa (R-SiC) iyinto esebenza kahle kakhulu enobulukhuni obulandela idayimane kuphela, eyakhiwa ekushiseni okuphezulu okungaphezu kuka-2000℃. Igcina izakhiwo eziningi ezinhle kakhulu ze-SiC, njengamandla okushisa aphezulu, ukumelana nokugqwala okunamandla, ukumelana okuhle kwe-oxidation, ukumelana okuhle kokushaqeka kokushisa nokunye.

● Izakhiwo ezinhle kakhulu zemishini. I-silicon carbide ephinde yasetshenziswa inamandla nokuqina okuphezulu kune-carbon fiber, ukumelana okukhulu komthelela, ingadlala ukusebenza okuhle ezindaweni ezinokushisa okukhulu, ingadlala ukusebenza okungcono kokuphikisana ezimweni ezahlukahlukene. Ngaphezu kwalokho, futhi inokuguquguquka okuhle futhi ayonakaliswa kalula ngokwelula nokugoba, okuthuthukisa kakhulu ukusebenza kwayo.

● Ukumelana nokugqwala okuphezulu. I-silicon carbide ephinde yasetshenziswa inokumelana nokugqwala okuphezulu ezinhlobonhlobo zemidiya, ingavimbela ukuguguleka kwezinhlobonhlobo zemidiya egqwalisayo, ingagcina izakhiwo zayo zemishini isikhathi eside, inokunamathela okuqinile, ukuze ibe nokuphila isikhathi eside kwenkonzo. Ngaphezu kwalokho, futhi inokuqina okuhle kokushisa, ingazivumelanisa nobubanzi obuthile bezinguquko zokushisa, ithuthukise umphumela wayo wokusetshenziswa.

● Ukusinta akunciphi. Ngenxa yokuthi inqubo yokusinta ayinciphi, akukho ukucindezeleka okusele okuzobangela ukuguquka noma ukuqhekeka komkhiqizo, futhi izingxenye ezinezimo eziyinkimbinkimbi kanye nokunemba okuphezulu zingalungiswa.

重结晶碳化硅物理特性 Izakhiwo zomzimba ze-Recrystallised Silicon Carbide
性质 / Impahla	典型数值 / Inani Elijwayelekile
使用温度/ Izinga lokushisa lokusebenza (°C)	1600°C (ene-oxygen), 1700°C (indawo enciphisayo)
I-SiC含量/ Okuqukethwe kwe-SiC	> 99.96%
自由Si含量/ Okuqukethwe kwe-Si kwamahhala	< 0.1%
体积密度/Ubuningi obukhulu	2.60-2.70 g/cm³
气孔率/ Ukuvuleka okubonakalayo	< 16%
抗压强度/ Amandla okucindezela	> 600I-MPa
常温抗弯强度/Amandla okugoba abandayo	80-90 MPa (20°C)
高温抗弯强度Amandla okugoba ashisayo	90-100 MPa (1400°C)
热膨胀系数/ Ukwandiswa kokushisa @1500°C	4.70 10^-6/°C
导热系数/Ukushisa kwe-conductivity @1200°C	23Ububanzi/m•K
杨氏模量/ Imodulus enwebekayo	240 GPa
抗热震性/ Ukumelana nokushaqeka kokushisa	Kuhle kakhulu

I-VET Energy iyi- iumenzi wangempela wemikhiqizo ye-graphite neye-silicon carbide eyenziwe ngokwezifiso ene-CVD coating,ingahlinzekaokuhlukahlukeneizingxenye ezenzelwe wena zemboni ye-semiconductor kanye ne-photovoltaic. OIthimba lakho lobuchwepheshe livela ezikhungweni zocwaningo zasekhaya eziphezulu, linganikeza izixazululo zezinto ezibonakalayo zobungcweti.kwakho.

Sihlala sithuthukisa izinqubo ezithuthukisiwe ukuze sinikeze izinto ezithuthukisiwe kakhulu,futhibasebenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kwengubo kanye ne-substrate kuqine futhi kunganciphisi ukuhlukana.

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo zomzimba ze-CVD SiCukugqoka
性质 / Impahla	典型数值 / Inani Elijwayelekile
晶体结构 / Isakhiwo sekristalu	Isigaba se-β se-FCC多晶，主要為（111）取向
密度 / Ubuningi	3.21 g/cm³
硬度 / Ubulukhuni	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Usayizi Wokusanhlamvu	2 ~ 10μm
纯度 / Ukuhlanzeka Kwamakhemikhali	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / Izinga Lokushisa Elingaphansi	2700℃
抗弯强度 / Amandla Okugobeka	I-415 MPa RT amaphuzu angu-4
杨氏模量 / I-Modulus yentsha	I-430 Gpa 4pt bend, 1300℃
导热系数 / I-ThermalUkuqhuba	300W·m^-1·K^-1
热膨胀系数 / Ukwanda Kokushisa (i-CTE)	4.5×10^-6K^-1