Daraasad Kiis: Qaybaha Graphite-ka ee Nadiifka Sare leh ee 32-Inch Beeraha Kulaylka ee Monocrystalline ee Nooca N-N ee Kobaca Silicon

Hordhac: Caqabadda Goobta Kulaylka ee 32-Inji ah ee Kobaca Silikoon ee Waxtarka Sare leh ee N-Nooca

Maadaama warshadaha photovoltaics-ku ay si degdeg ah uga gudbaan unugyada qorraxda ee nooca P-type PERC una gudbaan unugyada qorraxda ee nooca N-type TOPCon iyo Heterojunction (HJT), baahida loo qabo wafers silicon ah oo saafi ah ayaa cirka isku shareertay. Substrates-ka silicon-ka nooca N-type waxay u baahan yihiin cimri dherer aad u sarreeya oo ah sideyaal tiro yar (badanaa >300 μs) iyo wasakhowga wasakhda birta ee ku dhow eber.

Si loo kordhiyo wax soo saarka, soosaarayaasha wafer-ka silicon waxay ballaarinayaan cabbirrada shidaalka ilaa 32 inji iyo wixii ka dambeeya. Si kastaba ha ahaatee, ka shaqeynta heerkulka ka sarreeya 1,450°C ee goob kuleyl ah oo 32-inji ah waxay keenaysaa caqabado injineernimo oo daran:

1. Kala-goynta Kulaylka iyo Aan Isku-dheelitirnayn:Jaranjarooyinka kulaylka ee aadka u daran waxay sababaan qaab-dhismeedka iyo dildilaaca ku dhaca kuleyliyeyaasha garaafka caadiga ah iyo saldhigyada.
2. Wasakhowga Birta ee Isbeddelaya:Raad raac walxaha wasakhda ah (Fe, Ni, Cu, V) ee ku jira garaafka caadiga ah ayaa uumi baxa inta lagu jiro jiidista kiristaalka ee dheer, iyagoo si toos ah ugu guuraya silikoonka dhalaalay oo sababaya burbur daran oo soo gaara dadka laga tirada badan yahay cimrigooda.

Xalka Injineernimada: Gacmo-gashi Isostatic Graphite oo aad loo nadiifiyey & Ka-hortagga CVD SiC

Si looga gudbo caqabadaha farsamo, VeTek Semiconductor waxay ku dartay casriyeyn dhammaystiran oo walxo ah dhammaan isku-dhafka goobta kulaylka 32-inji ah, oo ka kooban garaafit isostatic ah oo cufnaan sare leh oo lagu nadiifiyo halogen heerkul sare leh iyo dahaarka ilaalinta CVD Silicon Carbide (SiC).

1. Nadiifinta Halogen Qoto dheer (Dambaska ku jira ≤ 2-5 ppm)

Graphite-ka warshadaha ee caadiga ah wuxuu ka kooban yahay dambas badan oo u dhexeeya 50 ppm iyo 200 ppm. Heerkulka 1,450°C ee faakuumka ku jira, walxahan raadku way dhalaalaan. Habka Nadiifinta Gaaska Halogen-ka Heerkulka Sare ee gaarka ah wuxuu wasakhda birta u beddelaa iskudhisyo halogen ah oo kacsan (koloriid/fluorides) heerkul ka sarreeya 2,400°C.

• Tijaabada Cabbirka Dheecaanka Iftiinka (GDMS)waxay xaqiijisaa in wadarta wasakhda birta ah (Fe, Cr, Ni, Cu, V) la dhimay ilaa 0.5 ppm, taasoo gaareysa wadarta guud ee dambaska oo ah ≤ 2 ppm.
• Natiijo:Waxay meesha ka saartaa isbeddelka gaaska birta ah ee asalka ah, iyadoo ka ilaalinaysa barkadda silikoon ee dhalaalaysa wasakhda inta lagu jiro 120+ saacadood oo wareegyo jiidis joogto ah.

2. Qaab-dhismeedka Graphite Isostatic ee Cufnaanta Sare leh ee Xasilloonida Kulaylka

Qaybaha ay ka mid yihiin kuleyliyaha garaafka, susceptor-ka, iyo foosto dahaarka ah waxaa laga sameeyaa graphite isostatic-ka cufnaanta sare (1.85 g/cm³), hadhuudh fiican (cabirka hadhuudhka <10 μm). Riixitaanka isostatic-ka wuxuu hubiyaa ballaarinta kulaylka isotropic ee isku midka ah (CTE), isagoo ka hortagaya walbahaarka kulaylka maxalliga ah, qallooca, iyo dildilaaca farsamada ee wareegyada kulaylka ee soo noqnoqda.

3. Dahaarka Ilaalinta CVD Silicon Carbide (SiC)

Qaybaha muhiimka ah ee ay soo gaaraan uumiga silikoon iyo gaasaska nadiifinta daxalka waxaa lagu dahaadhay lakab cufan oo 50–80 μm ah oo ah Kaydinta Uumiga Kiimikada (CVD) Silicon Carbide (SiC).

• Caqabadda Daxalka:Waxay ka hortagtaa falgalka kiimikada tooska ah ee u dhexeeya uumiga silikoon ee kacsan (SiO2) iyo substrate-ka garaafka (SiO2 + 2C → SiC + CO2), iyadoo meesha ka saareysa nabaad-guurka dusha sare iyo soo saarista boodhka kaarboonka.
• Saxnaanta Joomatari:Waxay ilaalisaa joomatari sax ah oo goobta kulaylka ah in ka badan 30% muddo dheer oo adeeg ah.

Xogta Waxqabadka La Cabbiray & Xaqiijinta Tijaabada Goobta

Tijaabo goobeed oo 6 bilood ah ayaa laga sameeyay 50 foornooyin CZ ah oo cabbirkoodu yahay 32-inji oo ku yaal xarun wax soo saar oo ah TOPCon silicon wafer oo heer-1 ah. Hoos waxaa ku yaal halbeegga waxqabadka oo isbarbardhigaya qaybaha garaafka caadiga ah iyo xalka goobta kuleylka ee la safeeyey ee VeTek Semiconductor:

Su'aalaha Badiya La Weydiiyo (FAQ)

Gunaanad & La-tashi Farsamo

Cusboonaysiinta qaybaha isostatic graphite ee aadka loo safeeyey iyadoo la adeegsanayo ilaalinta CVD SiC waxay bixisaa waddo toos ah oo la cabbiri karo oo lagu xallinayo dhibaatooyinka wax soo saarka iyo wasakhda ee koritaanka silicon monocrystalline ee nooca 32-inji ah ee N-nooca. Iyadoo 18% horumar laga sameeyay wax soo saarka ugu fiican iyo cimri dherer 30% ah oo ku saabsan goobta kulaylka, soosaarayaasha wafer-ka qorraxda ayaa gaari kara ROI weyn.