Inkqubo yeBCD

Yintoni inkqubo yeBCD?

Inkqubo ye-BCD yiteknoloji yenkqubo edibeneyo ene-chip enye eyaqaliswa okokuqala yi-ST ngo-1986. Le teknoloji inokwenza izixhobo ze-bipolar, CMOS kunye ne-DMOS kwi-chip enye. Inkangeleko yayo iyawunciphisa kakhulu ummandla we-chip.

Kunokuthiwa inkqubo yeBCD isebenzisa ngokupheleleyo iingenelo zobuchule bokuqhuba iBipolar, ukuhlanganiswa okuphezulu kweCMOS kunye nokusetyenziswa kwamandla aphantsi, kunye nombane ophezulu weDMOS kunye nomthamo ophezulu wokuhamba kwamandla wamandla. Phakathi kwazo, iDMOS sisitshixo sokuphucula amandla kunye nokuhlanganiswa. Ngophuhliso olongezelelekileyo lwetekhnoloji yesekethe edibeneyo, inkqubo yeBCD iye yaba yitekhnoloji yokuvelisa ephambili yePMIC.

Umzobo wecandelo elinqamlezileyo lenkqubo ye-BCD, inethiwekhi yomthombo, enkosi

Iingenelo zenkqubo yeBCD

Inkqubo ye-BCD yenza izixhobo ze-Bipolar, izixhobo ze-CMOS, kunye nezixhobo zamandla ze-DMOS kwi-chip enye ngaxeshanye, idibanisa amandla aphezulu okuqhuba umthwalo kunye nokukwazi ukuqhuba umthwalo onamandla wezixhobo ze-bipolar kunye nokuhlanganiswa okuphezulu kunye nokusetyenziswa kwamandla aphantsi kwe-CMOS, ukuze zikwazi ukuhambelana kwaye zinike amandla apheleleyo kwiingenelo zazo; ngaxeshanye, i-DMOS ingasebenza kwimodi yokutshintsha ngokusetyenziswa kwamandla aphantsi kakhulu. Ngamafutshane, ukusetyenziswa kwamandla aphantsi, ukusebenza kakuhle kwamandla aphezulu kunye nokuhlanganiswa okuphezulu zezinye zeenzuzo eziphambili ze-BCD. Inkqubo ye-BCD inokunciphisa kakhulu ukusetyenziswa kwamandla, iphucule ukusebenza kwenkqubo kwaye ibe nokuthembeka okungcono. Imisebenzi yeemveliso ze-elektroniki iyanda imihla ngemihla, kwaye iimfuno zotshintsho lwe-voltage, ukhuseleko lwe-capacitor kunye nolwandiso lobomi bebhetri ziya zisiba zibaluleke ngakumbi. Iimpawu ze-BCD ezikhawulezayo nezonga amandla ziyahlangabezana neemfuno zenkqubo yeetships zolawulo lwe-analog/power ezisebenzayo.

Iitekhnoloji eziphambili zenkqubo yeBCD

Izixhobo eziqhelekileyo zenkqubo yeBCD ziquka i-CMOS ene-voltage ephantsi, iityhubhu ze-MOS ezine-voltage ephezulu, ii-LDMOS ezine-voltage ezahlukeneyo zokuqhekeka, ii-vertical NPN/PNP kunye nee-diode zeSchottky, njl. Ezinye iinkqubo zidibanisa izixhobo ezifana ne-JFET kunye ne-EEPROM, nto leyo ekhokelela kwiindidi ezahlukeneyo zezixhobo kwinkqubo yeBCD. Ke ngoko, ukongeza ekuqwalaseleni ukuhambelana kwezixhobo ezine-voltage ephezulu kunye nezixhobo ezine-voltage ephantsi, iinkqubo zokucofa kabini kunye neenkqubo ze-CMOS, njl. kuyilo, itekhnoloji efanelekileyo yokwahlukanisa nayo kufuneka iqwalaselwe.

Kwiteknoloji yokwahlukanisa i-BCD, iiteknoloji ezininzi ezifana nokwahlukanisa i-junction, ukuzihlukanisa kunye nokwahlukanisa i-dielectric ziye zavela enye emva kwenye. Iteknoloji yokwahlukanisa i-junction kukwenza isixhobo kumaleko we-epitaxial yohlobo lwe-N we-substrate yohlobo lwe-P kwaye sisebenzise iimpawu ze-reverse bias ze-PN junction ukufezekisa ukwahlukanisa, kuba i-PN junction inokumelana okuphezulu kakhulu phantsi kwe-reverse bias.

Itekhnoloji yokuzihlukanisa ngokuyintloko yindlela yokwahlukanisa i-PN junction, exhomekeke kwiimpawu zendalo ze-PN junction phakathi kwemimandla yomthombo kunye ne-drain yesixhobo kunye ne-substrate ukuze kufezekiswe ukwahlukanisa. Xa ityhubhu ye-MOS ivuliwe, ummandla womthombo, ummandla we-drain kunye nomjelo zijikelezwe ngummandla wokuchithwa, zenze ukwahlukanisa kwi-substrate. Xa icinyiwe, indawo yokuhlangana ye-PN phakathi kommandla we-drain kunye ne-substrate ithambekele ngasemva, kwaye i-voltage ephezulu yommandla womthombo yahlulwe ngummandla wokuchithwa.

Ukuhlukaniswa kwe-dielectric kusebenzisa izixhobo zokukhusela ezifana ne-silicon oxide ukuze kufunyanwe ukuhlukaniswa. Ngokusekelwe ekuhlukanisweni kwe-dielectric kunye nokuhlukaniswa kwe-junction, ukuhlukaniswa kwe-quasi-dielectric kuye kwaphuhliswa ngokudibanisa iingenelo zazo zombini. Ngokusebenzisa ngokukhetha iteknoloji yokuhlukaniswa engentla, ukuhambelana kwe-high-voltage kunye ne-low-voltage kunokufezekiswa.

Isikhokelo sophuhliso lwenkqubo yeBCD

Uphuhliso lweteknoloji yenkqubo ye-BCD alufani nenkqubo eqhelekileyo ye-CMOS, ebisoloko ilandela umthetho kaMoore wokuphuhlisa kwicala lobubanzi bomgca omncinci kunye nesantya esikhawulezayo. Inkqubo ye-BCD yahlulwe phantse kwaye yaphuhliswa kwiindlela ezintathu: i-voltage ephezulu, amandla aphezulu, kunye noxinano oluphezulu.

1. Isikhokelo se-BCD esinombane ophezulu

I-BCD ene-voltage ephezulu inokuvelisa iisekethe zolawulo ezine-voltage ephantsi ezithembekileyo kakhulu kunye neesekethe ze-DMOS ezikumgangatho ophezulu kakhulu kwi-chip efanayo ngaxeshanye, kwaye inokuphumeza ukuveliswa kwezixhobo ze-voltage eziphezulu ze-500-700V. Nangona kunjalo, ngokubanzi, i-BCD isafanelekile kwiimveliso ezineemfuno eziphezulu zezixhobo zamandla, ngakumbi izixhobo ze-BJT okanye ze-DMOS zamandla aphezulu, kwaye ingasetyenziselwa ulawulo lwamandla kwizibane ze-elektroniki kunye nezicelo zoshishino.

Itekhnoloji yangoku yokwenza i-BCD ene-voltage ephezulu yitekhnoloji ye-RESURF eyacetywa ngu-Appel et al. ngo-1979. Esi sixhobo senziwe kusetyenziswa umaleko we-epitaxial ofakwe kancinci ukwenza usasazo lwentsimi yombane yomphezulu lube tyaba, ngaloo ndlela kuphuculwe iimpawu zokuqhekeka komphezulu, ukuze ukuqhekeka kwenzeke emzimbeni endaweni yomphezulu, ngaloo ndlela kwandiswe i-voltage yokuqhekeka kwesixhobo. Ukurhoxisa ukukhanya yenye indlela yokwandisa i-voltage yokuqhekeka kwe-BCD. Ngokuyintloko isebenzisa i-DDD yokurhoxisa kabini edityanisiweyo (i-Double Doping Drain) kunye ne-LDD yokurhoxisa kancinci (i-Lightly Doping Drain). Kwindawo yokurhoxisa i-DMOS, indawo yokurhuqa yohlobo lwe-N yongezwa ukutshintsha unxibelelwano lokuqala phakathi kwe-N+ drain kunye ne-P-type substrate ukuya kunxibelelwano phakathi kwe-N- drain kunye ne-P-type substrate, ngaloo ndlela kwandiswe i-voltage yokuqhekeka.

2. Ulwalathiso lwe-BCD olunamandla aphezulu

Uluhlu lwe-voltage ye-BCD enamandla aphezulu yi-40-90V, kwaye isetyenziswa kakhulu kwi-elektroniki yeemoto ezifuna amandla okuqhuba aphezulu, i-voltage ephakathi kunye neesekethe zolawulo ezilula. Iimpawu zayo zemfuno kukukwazi ukuqhuba okuphezulu, i-voltage ephakathi, kwaye isekethe yokulawula idla ngokuba lula.

3. Isikhokelo se-BCD esinoxinano oluphezulu

I-BCD enoxinano oluphezulu, uluhlu lwe-voltage yi-5-50V, kwaye ezinye izixhobo ze-elektroniki zeemoto ziya kufikelela kwi-70V. Imisebenzi eyinkimbinkimbi neyahlukeneyo inokudityaniswa kwi-chip enye. I-BCD enoxinano oluphezulu isebenzisa ezinye iingcamango zoyilo lwemodyuli ukuze kufezekiswe ukwahlukahlukana kwemveliso, ezisetyenziswa kakhulu kwizicelo ze-elektroniki zeemoto.

Izicelo eziphambili zenkqubo yeBCD

Inkqubo ye-BCD isetyenziswa kakhulu kulawulo lwamandla (ulawulo lwamandla kunye nebhetri), i-display drive, i-electronics yeemoto, ulawulo lwemizi-mveliso, njl. I-Power management chip (PMIC) yenye yeentlobo ezibalulekileyo zeetships ze-analog. Ukudibanisa inkqubo ye-BCD kunye netekhnoloji ye-SOI nako luphawu oluphambili lophuhliso lwenkqubo ye-BCD.

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