Inqubo ye-BCD

Iyini inqubo ye-BCD?

Inqubo ye-BCD ubuchwepheshe benqubo ehlanganisiwe ene-chip eyodwa eyethulwa okokuqala yi-ST ngo-1986. Lobu buchwepheshe bungenza amadivayisi e-bipolar, CMOS kanye ne-DMOS ku-chip efanayo. Ukubukeka kwayo kunciphisa kakhulu indawo ye-chip.

Kungashiwo ukuthi inqubo ye-BCD isebenzisa ngokugcwele izinzuzo zamandla okushayela i-Bipolar, ukuhlanganiswa okuphezulu kwe-CMOS kanye nokusetshenziswa kwamandla aphansi, kanye ne-DMOS high voltage kanye nomthamo wokugeleza wamanje ophezulu. Phakathi kwazo, i-DMOS iyisihluthulelo sokuthuthukisa amandla nokuhlanganiswa. Ngokuthuthuka okuqhubekayo kobuchwepheshe besekethe ehlanganisiwe, inqubo ye-BCD isibe ubuchwepheshe bokukhiqiza obujwayelekile be-PMIC.

Umdwebo wesigaba esinqamulayo senqubo ye-BCD, inethiwekhi yomthombo, ngiyabonga

Izinzuzo zenqubo ye-BCD

Inqubo ye-BCD yenza amadivayisi e-Bipolar, amadivayisi e-CMOS, kanye namadivayisi kagesi e-DMOS ku-chip efanayo ngesikhathi esisodwa, ihlanganisa i-transconductance ephezulu kanye nekhono lokushayela umthwalo eliqinile lamadivayisi e-bipolar kanye nokuhlanganiswa okuphezulu kanye nokusetshenziswa kwamandla aphansi kwe-CMOS, ukuze bakwazi ukuhambisana futhi banikeze ukudlala okugcwele ezinzuzweni zabo ezifanele; ngesikhathi esifanayo, i-DMOS ingasebenza kwimodi yokushintsha ngokusetshenziswa kwamandla aphansi kakhulu. Ngamafuphi, ukusetshenziswa kwamandla aphansi, ukusebenza kahle kwamandla aphezulu kanye nokuhlanganiswa okuphezulu kungenye yezinzuzo eziyinhloko ze-BCD. Inqubo ye-BCD inganciphisa kakhulu ukusetshenziswa kwamandla, ithuthukise ukusebenza kwesistimu futhi ibe nokuthembeka okungcono. Imisebenzi yemikhiqizo ye-elekthronikhi iyanda usuku nosuku, futhi izidingo zokushintsha kwamandla kagesi, ukuvikelwa kwe-capacitor kanye nokwandiswa kokuphila kwebhethri kuya ngokuya kuba kubaluleke kakhulu. Izici zesivinini esiphezulu nezonga amandla ze-BCD zihlangabezana nezidingo zenqubo zama-chip okuphatha i-analog/amandla asebenza kahle kakhulu.

Ubuchwepheshe obubalulekile benqubo ye-BCD

Amadivayisi ajwayelekile enqubo ye-BCD afaka phakathi i-CMOS ene-voltage ephansi, amashubhu e-MOS ane-voltage ephezulu, i-LDMOS enama-voltage ahlukahlukene okuqhekeka, ama-NPN/PNP aqondile kanye nama-diode e-Schottky, njll. Ezinye izinqubo ziphinde zihlanganise amadivayisi afana ne-JFET kanye ne-EEPROM, okuholela ezinhlobonhlobo eziningi zamadivayisi enqubweni ye-BCD. Ngakho-ke, ngaphezu kokucabangela ukuhambisana kwamadivayisi ane-voltage ephezulu kanye namadivayisi ane-voltage ephansi, izinqubo zokuchofoza kabili kanye nezinqubo ze-CMOS, njll. ekwakhiweni, ubuchwepheshe bokuhlukanisa obufanele kumele bucatshangelwe.

Kubuchwepheshe bokuhlukanisa be-BCD, ubuchwepheshe obuningi obufana nokuhlukanisa i-junction, ukuzihlukanisa kanye nokuhlukanisa i-dielectric buvele bulandelana. Ubuchwepheshe bokuhlukanisa i-junction buwukwenza idivayisi kungqimba lwe-epitaxial yohlobo lwe-N lwe-substrate yohlobo lwe-P bese isebenzisa izici ze-reverse bias ze-PN junction ukuze kufezwe ukuhlukaniswa, ngoba i-PN junction inokumelana okuphezulu kakhulu ngaphansi kwe-reverse bias.

Ubuchwepheshe bokuzihlukanisa ngokuyisisekelo buwukuhlukaniswa kwe-PN junction, okuncike ezicini zemvelo ze-PN junction phakathi kwezindawo zomthombo kanye nezindawo zokukhipha amanzi zedivayisi kanye ne-substrate ukuze kufezwe ukuhlukaniswa. Lapho ithubhu le-MOS livuliwe, indawo yomthombo, indawo yokukhipha amanzi kanye nesiteshi zizungezwe yindawo yokuphelelwa amanzi, zakha ukuhlukaniswa kusuka ku-substrate. Uma ivaliwe, indawo yokuhlangana kwe-PN phakathi kwesifunda sokukhipha amanzi kanye ne-substrate ibheke emuva, futhi i-voltage ephezulu yesifunda somthombo ihlukaniswa yindawo yokuphelelwa amanzi.

Ukuhlukaniswa kwe-dielectric kusebenzisa imidiya yokuvikela njenge-silicon oxide ukuze kufezwe ukuhlukaniswa. Ngokusekelwe ekuhlukanisweni kwe-dielectric kanye nokuhlukaniswa kwe-junction, ukuhlukaniswa kwe-quasi-dielectric kuye kwathuthukiswa ngokuhlanganisa izinzuzo zakho kokubili. Ngokusebenzisa ngokukhetha ubuchwepheshe bokuhlukanisa obungenhla, ukuhambisana kwe-high-voltage kanye ne-low-voltage kungafinyelelwa.

Isiqondiso sokuthuthukiswa kwenqubo ye-BCD

Ukuthuthukiswa kobuchwepheshe benqubo ye-BCD akufani nenqubo ejwayelekile ye-CMOS, ebilokhu ilandela umthetho kaMoore wokuthuthuka ngendlela yobubanzi bomugqa omncane kanye nesivinini esisheshayo. Inqubo ye-BCD ihlukaniswa cishe futhi ithuthukiswe ngezindlela ezintathu: i-voltage ephezulu, amandla aphezulu, kanye nokuxinana okuphezulu.

1. Isiqondiso se-BCD esinogesi ophezulu

I-BCD enamandla aphezulu ingakhiqiza amasekethe okulawula aphansi anokwethenjelwa okuphezulu kanye namasekethe e-DMOS asezingeni eliphezulu kakhulu ku-chip efanayo ngesikhathi esifanayo, futhi ingakhiqiza ukukhiqizwa kwamadivayisi aphezulu angu-500-700V. Kodwa-ke, ngokuvamile, i-BCD isafaneleka emikhiqizweni enezidingo eziphakeme kakhulu zamadivayisi kagesi, ikakhulukazi amadivayisi e-BJT noma anamandla aphezulu e-DMOS, futhi ingasetshenziswa ukulawula amandla ekukhanyeni kwe-elekthronikhi nasezisetshenzisweni zezimboni.

Ubuchwepheshe bamanje bokukhiqiza i-BCD enamandla aphezulu ubuchwepheshe be-RESURF obaphakanyiswa ngu-Appel et al. ngo-1979. Le divayisi yenziwe kusetshenziswa ungqimba lwe-epitaxial olufakwe kancane ukuze kwenziwe ukusatshalaliswa kwensimu kagesi ebusweni kube yisicaba, ngaleyo ndlela kuthuthukiswe izici zokuqhekeka kobuso, ukuze ukuqhekeka kwenzeke emzimbeni esikhundleni sobuso, ngaleyo ndlela kwandiswe i-voltage yokuqhekeka kwedivayisi. Ukufakwa kokukhanya kuyindlela yokwandisa i-voltage yokuqhekeka kwe-BCD. Ngokuyinhloko isebenzisa i-DDD yokudonswa kabili (i-Double Doping Drain) kanye ne-LDD yokudonswa kancane (i-Little Doping Drain). Esifundeni sokudonswa kwe-DMOS, isifunda sokukhukhuleka kohlobo lwe-N siyangezwa ukushintsha ukuxhumana kokuqala phakathi kwe-drain ye-N+ kanye ne-substrate yohlobo lwe-P kube ukuxhumana phakathi kwe-N- drain kanye ne-substrate yohlobo lwe-P, ngaleyo ndlela kwandiswe i-voltage yokuqhekeka.

2. Isiqondiso se-BCD esinamandla aphezulu

Ibanga lamandla kagesi e-BCD enamandla aphezulu lingu-40-90V, futhi lisetshenziswa kakhulu kuma-elekthronikhi ezimoto adinga amandla okushayela aphezulu, amandla kagesi aphakathi nendawo kanye namasekethe okulawula alula. Izici zayo zokufunwa amandla okushayela aphezulu, amandla kagesi aphakathi nendawo, kanti isekethe yokulawula ivame ukuba lula.

3. Isiqondiso se-BCD esinobuningi obukhulu

I-BCD enobukhulu obuphezulu, ububanzi bamandla kagesi bungu-5-50V, kanti amanye ama-elekthronikhi ezimoto azofinyelela ku-70V. Imisebenzi eyinkimbinkimbi nehlukahlukene ingahlanganiswa ku-chip efanayo. I-BCD enobukhulu obuphezulu isebenzisa eminye imibono yokuklama ye-modular ukuze kufezwe ukuhlukahluka komkhiqizo, okusetshenziswa kakhulu ezinhlelweni ze-elekthronikhi zezimoto.

Izicelo eziyinhloko zenqubo ye-BCD

Inqubo ye-BCD isetshenziswa kabanzi ekuphathweni kwamandla (ukulawula amandla nebhethri), idrayivu yokubonisa, i-elekthronikhi yezimoto, ukulawula izimboni, njll. I-chip yokuphatha amandla (PMIC) ingenye yezinhlobo ezibalulekile zama-chip analog. Ukuhlanganiswa kwenqubo ye-BCD nobuchwepheshe be-SOI nakho kuyisici esibalulekile sokuthuthukiswa kwenqubo ye-BCD.

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