Izithwali ze-graphite ze-SiC zokumboza i-MOCVD Wafer,Ama-Graphite Susceptorsnge-SiC Epitaxy,
Izithako zekhabhoni, Ama-susceptors e-graphite epitaxy, Ama-Graphite Susceptors, I-MOCVD Susceptor, Ama-Wafer Susceptors,

Isembozo se-CVD-SiC sinezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana nokushiswa kwe-oxidation, ubumsulwa obuphezulu, ukumelana ne-asidi ne-alkali kanye ne-reagent yemvelo, enezakhiwo zomzimba nezimakhemikhali ezizinzile.

Uma kuqhathaniswa nezinto ze-graphite ezihlanzekile kakhulu, i-graphite iqala uku-oxidation ku-400C, okuzobangela ukulahlekelwa yimpuphu ngenxa yoku-oxidation, okuzoholela ekungcolisweni kwemvelo kumadivayisi angaphandle kanye namakamelo okuhlanza, futhi kwandise ukungcola kwendawo ehlanzekile kakhulu.

Kodwa-ke, ukugqoka kwe-SiC kungagcina ukuzinza ngokomzimba nangokwekhemikhali kuma-degrees angu-1600, Kusetshenziswa kabanzi embonini yanamuhla, ikakhulukazi embonini ye-semiconductor.

Inkampani yethu inikeza izinsizakalo zenqubo yokumboza i-SiC ngendlela ye-CVD ebusweni be-graphite, izinto zobumba nezinye izinto, ukuze amagesi akhethekile aqukethe ikhabhoni ne-silicon asabela ekushiseni okuphezulu ukuze athole ama-molecule e-SiC ahlanzekile kakhulu, ama-molecule abekwe ebusweni bezinto ezimboziwe, akha ungqimba oluvikelayo lwe-SIC. I-SIC eyakhiwe iboshwe ngokuqinile esisekelweni se-graphite, inikeza isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite bube buncane, bungabi ne-Porosity, bumelana nokushisa okuphezulu, bumelana nokugqwala kanye nokumelana ne-oxidation.

Isicelo:

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana nokushiswa kwe-oxidation kusese kuhle kakhulu lapho izinga lokushisa liphezulu lifinyelela ku-1700 C.

2. Ubumsulwa obuphezulu: okwenziwe ngokufaka umusi wamakhemikhali ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.

Imininingwane Eyinhloko Yezimbozo ze-CVD-SIC:

Amandla Okunikezela:

Izingcezu/Izingcezu eziyi-10000 ngenyanga
Ukupakisha Nokulethwa:
Ukupakisha: Ukupakisha Okujwayelekile Nokuqinile
Isikhwama se-poly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo: