Silicon carbide semiconductor material

Silicon carbide (SiC) semiconductor material is the most mature one among the wide band gap semiconductors developed. SiC semiconductor materials have great application potential in high temperature, high frequency, high power, photoelectronics and radiation resistant devices due to their wide band gap, high breakdown electric field, high thermal conductivity, high saturation electron mobility and smaller size. Silicon carbide has a wide range of applications: because of its wide band gap, it can be used to make blue light-emitting diodes or ultraviolet detectors that are barely affected by sunlight; Because the voltage or electric field can be tolerated eight times than silicon or gallium arsenide, especially suitable for manufacturing high-voltage high-power devices such as high-voltage diodes, power triode, silicon controlled and high-power microwave devices; Because of the high saturation electron migration speed, can be made into a variety of high frequency devices (RF and microwave); Silicon carbide is a good conductor of heat and conducts heat better than any other semiconductor material, which makes silicon carbide devices work at high temperatures.

As a specific example, APEI is currently preparing to develop its extremeenvironment DC motor drive system for NASA’s Venus Explorer (VISE) using silicon carbide components. Still in the design phase, the goal is to land exploration robots on the surface of Venus.

In addition, silicon carbide has a strong ionic covalent bond, it has high hardness, thermal conductivity over copper, good heat dissipation performance, corrosion resistance is very strong, radiation resistance, high temperature resistance and good chemical stability and other properties, has a wide range of applications in the field of aerospace technology. For example, the use of silicon carbide materials to prepare spacecraft for astronauts, researchers to live and work.


Post time: Aug-01-2022
WhatsApp Online Chat !