I-4″ 6″ 8″ I-SiC Wafer Boat Yesithando Esithe Tye

Isikhephe se-SiC Wafer esine-4" 6" 8" se-SiC se-Two Furnace

Isikhephe se-SiC esisikiweyo sesithando esithe tyeEyona nto iphambili kukuxhasa nokuthutha ii-wafers kwiinkqubo zobushushu obuphezulu zee-wafers ze-semiconductor ezifana nokusasazwa, ukuxinana, kunye nokutsalwa kwe-annealing. Ukusebenza kwayo kuchaphazela ngokuthe ngqo umgangatho wemveliso ye-wafer kunye nokusebenza kakuhle kwemveliso.

Uyilo lwesakhiwo senqanawa ye-silicon carbide wafer:
Ngokwesiqhelo inesakhiwo esinamachaphaza okanye esifana nekama;
Izithuba ezininzi zokubeka nokwahlula ii-wafers;
Yenzelwe ukuqwalasela ukusasazwa kokuhamba kwegesi, ukuqinisekisa ukufudumeza nokupholisa okufanayo;
Ifanelekile kwi-oven ethe nkqo kunye ne-oven ethe tye;
Yenzelwe ubungakanani obahlukeneyo obufana neewafers eziyi-3 intshi, 4 intshi, 6 intshi, 8 intshi, 12 intshi.

Iinqanawa ze-wafer ze-silicon carbide ze-VET Energy zenziwe kusetyenziswa iteknoloji yokusila ephucukileyo kwaye zenzelwe ngokukodwa ukuhlangabezana neemfuno ezingqongqo zokuthwala iinkqubo zokwenziwa kwe-semiconductor ephucukileyo. Iingenelo zazo zobugcisa ezibalaseleyo zibonakala kakhulu kwezi zinto zilandelayo:

1. Ubunyulu Obupheleleyo kunye noNgcoliseko Oluphantsi Kakhulu
Sisebenzisa izinto eziluhlaza ezicocekileyo kakhulu, siqinisekisa ukuba imveliso inomxholo we-ion yesinyithi ophantsi kakhulu (ngaphantsi kwe-1 ppm kwi-Na, K, Fe, kunye ne-Ca). Ukuna kwemvula okuncinci kumaqondo obushushu aphezulu kuthintela ngokufanelekileyo ungcoliseko lwe-wafer, kuqinisekisa isivuno esiphezulu kunye nokuthembeka, okwenza ukuba ibe lukhetho olufanelekileyo kwabo balwela ukugqibelela kwenkqubo.
2. Ukusebenza kakuhle kobushushu kunye nozinzo
Isikhephe sethu se-SiC wafer sinomoya ophezulu kakhulu wokuhambisa ubushushu kunye nokumelana okuhle kakhulu nokutshayiswa kobushushu. Siyakwazi ukumelana nokuguquguquka okukhawulezayo kobushushu ukusuka kubushushu begumbi ukuya kwi-1600℃ ngaphandle kokuqhekeka okanye ukuguquka, ukuqinisekisa ukuphindaphindwa kwenkqubo kunye nokuhambelana, kunciphisa kakhulu ixesha lokungasebenzi elingalindelekanga ngenxa yeengxaki zomthwali.
3. Ukumelana nokugqwala okungaqhelekanga kunye namandla oomatshini
Ubunzima obuphezulu kunye nokumelana nokuguguleka okunamandla, kunye nokumelana okumangalisayo kwiindawo ezine-asidi kunye ne-alkaline, kudlula kakhulu i-quartz kunye ne-graphite. Amandla ayo angaqhelekanga oomatshini athintela ngokufanelekileyo ukuveliswa kwamasuntswana ngexesha lokuphathwa ngokuzenzekelayo rhoqo, okwandisa kakhulu ubomi bayo benkonzo kwaye kunciphisa iindleko zokusebenza zizonke.
4. Uyilo oluchanekileyo kunye nokungaguquguquki okugqwesileyo
Sisebenzisa ubuchwepheshe obuphambili bokubumba nokucubungula, siqinisekisa ukuba isikhephe ngasinye se-wafer sinemilinganiselo echanekileyo yejometri kunye nokuchaneka okugqwesileyo komphezulu, siqinisekisa ukuba isithuba se-wafer esifanayo kunye nokuhamba komoya okuzinzileyo.

Ukucocwa kunye nokugcinwa kwesikhephe se-SiC wafer:
Kufuna ukucocwa rhoqo ukuze kususwe iintsalela ezinokubakho;
Isebenzisa izisombululo kunye neendlela ezikhethekileyo zokucoca ukuthintela umonakalo;